SLLS685D July 2006 – September 2015 TPD6E001
PRODUCTION DATA.
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
VCC | –0.3 | 7 | V | |||
VI/O | –0.3 | VCC + 0.3 | V | |||
TJ | Junction temperature | 150 | °C | |||
Bump temperature (soldering) | Infrared (15 s) | 220 | °C | |||
Vapor phase (60 s) | 215 | °C | ||||
Lead temperature (soldering, 10 s) | 300 | °C | ||||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±15000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 | V | ||
IEC 61000-4-2 Contact Discharge | ±8000 | V | ||
IEC 61000-4-2 Air-Gap Discharge | ±15000 | V |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
TA Operating free-air temperature range | -40 | 85 | °C | ||
Operating Voltage | VCC Pin | 0.9 | 5.5 | V | |
IOx Pins | 0 | VCC |
THERMAL METRIC(1) | TPD6E001 | UNIT | ||
---|---|---|---|---|
RSE (UQFN) | RSF (WQFN) | |||
10 PINS | 12 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 235.0 | 75.8 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 140.9 | 74.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 154.6 | 51.3 | °C/W |
ψJT | Junction-to-top characterization parameter | 21.8 | 5.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 154.6 | 51.4 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | 31.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VCC | Supply voltage | 0.9 | 5.5 | V | |||
ICC | Supply current | 1 | 100 | nA | |||
VF | Diode forward voltage | IF = 10 mA | 0.65 | 0.95 | V | ||
VBR | Breakdown voltage | IBR = 10 mA | 11 | V | |||
VC | Channel clamp voltage(2) | TA = 25°C, ±15-kV HBM, IF = 10 A |
Positive transients | VCC + 25 | V | ||
Negative transients | –25 | V | |||||
TA = 25°C, ±8-kV Contact Discharge (IEC 61000-4-2), IF = 24 A |
Positive transients | VCC + 60 | V | ||||
Negative transients | –60 | V | |||||
TA = 25°C, ±15-kV Air-Gap Discharge (IEC 61000-4-2), IF = 45 A |
Positive transients | VCC + 100 | V | ||||
Negative transients | –100 | V | |||||
Ii/o | Channel leakage current | Vi/o = GND to VCC | ±1 | nA | |||
Ci/o | Channel input capacitance | VCC = 5 V, Bias of VCC/2 | 1.5 | pF |