JAJSFN2 June   2018 TPD8S300A

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     CCおよびSBUの過電圧保護
    2.     CCおよびDP/DMの過電圧保護
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings—JEDEC Specification
    3. 8.3 ESD Ratings—IEC Specification
    4. 8.4 Recommended Operating Conditions
    5. 8.5 Thermal Information
    6. 8.6 Electrical Characteristics
    7. 8.7 Timing Requirements
    8. 8.8 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 4-Channels of Short-to-VBUS Overvoltage Protection (CC1, CC2, SBU1, SBU2 Pins or CC1, CC2, DP, DM Pins): 24-VDC Tolerant
      2. 9.3.2 8-Channels of IEC 61000-4-2 ESD Protection (CC1, CC2, SBU1, SBU2, DP_T, DM_T, DP_B, DM_B Pins)
      3. 9.3.3 CC1, CC2 Overvoltage Protection FETs 600 mA Capable for Passing VCONN Power
      4. 9.3.4 CC Dead Battery Resistors Integrated for Handling the Dead Battery Use Case in Mobile Devices
      5. 9.3.5 Advantages over TPD8S300
        1. 9.3.5.1 Improved Dead Battery Performance
        2. 9.3.5.2 USB Type-C Port Stays Connected during an IEC 61000-4-2 ESD Strike
      6. 9.3.6 3-mm × 3-mm WQFN Package
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 VBIAS Capacitor Selection
        2. 10.2.2.2 Dead Battery Operation
        3. 10.2.2.3 CC Line Capacitance
        4. 10.2.2.4 Additional ESD Protection on CC and SBU Lines
        5. 10.2.2.5 FLT Pin Operation
        6. 10.2.2.6 How to Connect Unused Pins
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 ドキュメントのサポート
      1. 13.1.1 関連資料
    2. 13.2 ドキュメントの更新通知を受け取る方法
    3. 13.3 コミュニティ・リソース
    4. 13.4 商標
    5. 13.5 静電気放電に関する注意事項
    6. 13.6 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CC OVP SWITCHES
RON On resistance of CC OVP FETs, TJ ≤ 85°C CCx = 5.5 V 278 392 mΩ
On resistance of CC OVP FETs, TJ ≤ 105°C CCx = 5.5 V 278 415 mΩ
RON(FLAT) On resistance flatness Sweep CCx voltage between 0 V and 1.2 V 5 mΩ
CON_CC Equivalent on capacitance Capacitance from C_CCx or CCx to GND when device is powered. VC_CCx/VCCx = 0 V to 1.2 V, f = 400 kHz 60 74 120 pF
RD Dead battery pull-down resistance (only present when device is unpowered). Effective resistance of RD and FET in series V_C_CCx = 2.6 V 4.1 5.1 6.1 kΩ
VTH_DB Threshold voltage of the pulldown FET in series with RD during dead battery I_CC = 80 µA 0.5 0.9 1.2 V
VOVPCC OVP threshold on CC pins Place 5.5 V on C_CCx. Step up C_CCx until the FLT pin is asserted 5.75 6 6.2 V
VOVPCC_HYS Hysteresis on CC OVP Place 6.5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure difference between rising and falling OVP threshold for C_CCx 50 mV
BWON On bandwidth single ended (–3 dB) Measure the –3-dB bandwidth from C_CCx to CCx. Single ended measurement, 50-Ω system. Vcm = 0.1 V to 1.2 V 100 MHz
VSTBUS_CC Short-to-VBUS tolerance on the CC pins Hot-Plug C_CCx with a 1 meter USB Type C Cable, place a 30-Ω load on CCx 24 V
VSTBUS_CC_CLAMP Short-to-VBUS system-side clamping voltage on the CC pins (CCx) Hot-Plug C_CCx with a 1 meter USB Type C Cable. Hot-Plug voltage C_CCx = 24 V. VPWR = 3.3 V. Place a 30-Ω load on CCx 8 V
SBU OVP SWITCHES
RON On resistance of SBU OVP FETs SBUx = 3.6 V. –40°C ≤ TJ ≤ +85°C 4 6.5 Ω
RON(FLAT) On resistance flatness Sweep SBUx voltage between 0 V and 3.6 V. –40°C ≤ TJ ≤ +85°C 0.7 1.5 Ω
CON_SBU Equivalent on capacitance Capacitance from SBUx or C_SBUx to GND when device is powered. Measure at VC_SBUx/VSBUx = 0.3 V to 3.6 V 6 pF
VOVPSBU OVP threshold on SBU pins Place 3.6 V on C_SBUx. Step up C_SBUx until the FLT pin is asserted 4.35 4.5 4.7 V
VOVPSBU_HYS Hysteresis on SBU OVP Place 5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure difference between rising and falling OVP threshold for C_SBUx 50 mV
BWON On bandwidth single ended (–3 dB) Measure the –3-dB bandwidth from C_SBUx to SBUx. Single ended measurement, 50-Ω system. Vcm = 0.1 V to 3.6 V 1000 MHz
XTALK Crosstalk Measure crosstalk at f = 1 MHz from SBU1 to C_SBU2 or SBU2 to C_SBU1. Vcm1 = 3.6 V, Vcm2 = 0.3 V. Be sure to terminate open sides to 50 Ω –80 dB
VSTBUS_SBU Short-to-VBUS tolerance on the SBU pins Hot-Plug C_SBUx with a 1 meter USB Type C Cable. Put a 100-nF capacitor in series with a 40-Ω resistor to GND on SBUx 24 V
VSTBUS_SBU_CLAMP Short-to-VBUS system-side clamping voltage on the SBU pins (SBUx) Hot-Plug C_SBUx with a 1 meter USB Type C Cable. Hot-Plug voltage C_SBUx = 24 V. VPWR = 3.3 V. Put a 150-nF capacitor in series with a 40-Ω resistor to GND on SBUx 8 V
POWER SUPPLY and LEAKAGE CURRENTS
VPWR_UVLO VPWR under voltage lockout Place 1 V on VPWR and raise voltage until SBU or CC FETs turnon 2.1 2.3 2.5 V
VPWR_UVLO_HYS VPWR UVLO hysteresis Place 3 V on VPWR and lower voltage until SBU or CC FETs turnoff; measure difference between rising and falling UVLO to calculate hysteresis 100 150 200 mV
IVPWR VPWR supply current VPWR = 3.3 V (typical), VPWR = 3.6 V (maximum). –40°C ≤ TJ ≤ +85°C. 90 120 µA
ICC_LEAK Leakage current for CC pins when device is powered VPWR = 3.3 V, VC_CCx = 3.6 V, CCx pins are floating, measure leakage into C_CCx pins. Result must be same if CCx side is biased and C_CCx is left floating 5 µA
ISBU_LEAK Leakage current for SBU pins when device is powered VPWR = 3.3 V, VC_SBUx = 3.6 V, SBUx pins are floating, measure leakge into C_SBUx pins. Result must be same if SBUx side is biased and C_SBUx is left floating. –40°C ≤ TJ ≤ +85°C 3 µA
IC_CC_LEAK_OVP Leakage current for CC pins when device is in OVP VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx pins are set to 0 V, measure leakage into C_CCx pins 1200 µA
IC_SBU_LEAK_OVP Leakage current for SBU pins when device is in OVP VPWR = 0 V or 3.3 V, VC_SBUx = 24 V, SBUx pins are set to 0 V, measure leakage into C_SBUx pins 400 µA
ICC_LEAK_OVP Leakage current for CC pins when device is in OVP VPWR = 0 V or 3.3 V, VC_CCx = 24 V, CCx pins are set to 0 V, measure leakage out of CCx pins 30 µA
ISBU_LEAK_OVP Leakage current for SBU pins when device is in OVP VPWR = 0 V or 3.3 V, VC_SBUx = 24 V, SBUx pins are set to 0 V, measure leakage out of SBUx pins –1 1 µA
IDx_LEAK Leakage current for Dx pins V_Dx = 3.6 V, measure leakage into Dx pins 1 µA
FLT PIN
VOL Low-level output voltage IOL = 3 mA. Measure the voltage at the FLT pin 0.4 V
OVER TEMPERATURE PROTECTION
TSD_RISING The rising over-temperature protection shutdown threshold 150 175 °C
TSD_FALLING The falling over-temperature protection shutdown threshold 130 140 °C
TSD_HYST The over-temperature protection shutdown threshold hysteresis 35 °C
Dx ESD PROTECTION
VRWM_POS Reverse stand-off voltage from Dx to GND Dx to GND. IDX ≤ 1 µA 5.5 V
VRWM_NEG Reverse stand-off voltage from GND to Dx GND to Dx 0 V
VBR_POS Break-down voltage from Dx to GND Dx to GND. IBR = 1 mA 7 V
VBR_NEG Break-down voltage from GND to Dx GND to Dx. IBR = 8 mA 0.6 V
CIO Dx to GND or GND to Dx f = 1 MHz, VIO = 2.5 V 1.7 pF
ΔCIO Differential capacitance between two Dx pins f = 1 MHz, VIO = 2.5 V 0.02 pF
RDYN Dynamic on-resistance Dx IEC clamps Dx to GND or GND to Dx 0.4 Ω