JAJSHM7B June   2019  – November 2021 TPS1HB50-Q1

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1. 6.1 Recommended Connections for Unused Pins
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SNS Timing Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Protection Mechanisms
        1. 9.3.1.1 Thermal Shutdown
        2. 9.3.1.2 Current Limit
          1. 9.3.1.2.1 Current Limit Foldback
          2. 9.3.1.2.2 Programmable Current Limit
          3. 9.3.1.2.3 Undervoltage Lockout (UVLO)
          4. 9.3.1.2.4 VBB During Short-to-Ground
        3. 9.3.1.3 Voltage Transients
          1. 9.3.1.3.1 Load Dump
          2. 9.3.1.3.2 Driving Inductive Loads
        4. 9.3.1.4 Reverse Battery
        5. 9.3.1.5 Fault Event – Timing Diagrams
      2. 9.3.2 Diagnostic Mechanisms
        1. 9.3.2.1 VOUT Short-to-Battery and Open-Load
          1. 9.3.2.1.1 Detection With Switch Enabled
          2. 9.3.2.1.2 Detection With Switch Disabled
        2. 9.3.2.2 SNS Output
          1. 9.3.2.2.1 RSNS Value
            1. 9.3.2.2.1.1 High Accuracy Load Current Sense
            2. 9.3.2.2.1.2 SNS Output Filter
        3. 9.3.2.3 Fault Indication and SNS Mux
        4. 9.3.2.4 Resistor Sharing
        5. 9.3.2.5 High-Frequency, Low Duty-Cycle Current Sensing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Standby
      3. 9.4.3 Diagnostic
      4. 9.4.4 Standby Delay
      5. 9.4.5 Active
      6. 9.4.6 Fault
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Ground Protection Network
      2. 10.1.2 Interface With Microcontroller
      3. 10.1.3 I/O Protection
      4. 10.1.4 Inverse Current
      5. 10.1.5 Loss of GND
      6. 10.1.6 Automotive Standards
        1. 10.1.6.1 ISO7637-2
        2. 10.1.6.2 AEC-Q100-012 Short Circuit Reliability
      7. 10.1.7 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Thermal Considerations
        2. 10.2.2.2 RILIM Calculation
        3. 10.2.2.3 Diagnostics
          1. 10.2.2.3.1 Selecting the RISNS Value
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 サポート・リソース
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.6 SNS Timing Characteristics

VBB = 6 V to 18 V, TJ = -40°C to +150°C (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SNS TIMING - CURRENT SENSE
tSNSION1Settling time from rising edge of DIA_ENVEN = 5 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ, RL ≤  6 Ω		40µs
tSNSION2Settling time from rising edge of EN and DIA_ENVEN = VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ, RL ≤ 6 Ω		200µs
tSNSION3Settling time from rising edge of ENVEN = 0 V to 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, RL ≤ 6 Ω		165µs
tSNSIOFF1Settling time from falling edge of DIA_ENVEN = 5 V, VDIA_EN = 5 V to 0 V
RSNS = 1 kΩ, RL ≤ 6 Ω		20µs
tSETTLEHSettling time from rising edge of load stepVEN = 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, IOUT = 1 A to 5 A		20µs
tSETTLELSettling time from falling edge of load stepVEN = 5 V, VDIA_EN = 5 V
RSNS = 1 kΩ, IOUT = 5 A to 1 A		20µs
SNS TIMING - TEMPERATURE SENSE
tSNSTON1Settling time from rising edge of DIA_ENVEN = 5 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ		40µs
tSNSTON2Settling time from rising edge of DIA_ENVEN = 0 V, VDIA_EN = 0 V to 5 V
RSNS = 1 kΩ		70µs
tSNSTOFFSettling time from falling edge of DIA_ENVEN = X, VDIA_EN = 5 V to 0 V
RSNS = 1 kΩ		20µs
SNS TIMING - MULTIPLEXER
tMUXSettling time from temperature sense to current senseVEN = 5 V, VDIA_EN = 5 V
VSEL1 = 5 V to 0 V
RSNS = 1 kΩ, RL ≤ 6 Ω		60µs
Settling time from current sense to temperature senseVEN = 5 V, VDIA_EN = 5 V
VSEL1 = 0 V to 5 V
RSNS = 1 kΩ, RL ≤ 6 Ω		60µs