SLVSGL4 September   2023 TPS1HTC30-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
    1. 5.1 Recommended Connections for Unused Pins
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Timing Diagrams
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Accurate Current Sense
      2. 8.3.2 Programmable Current Limit
        1. 8.3.2.1 Capacitive Charging
      3. 8.3.3 Inductive-Load Switching-Off Clamp
      4. 8.3.4 Inductive Load Demagnetization
      5. 8.3.5 Full Protections and Diagnostics
        1. 8.3.5.1 Short-Circuit and Overload Protection
        2. 8.3.5.2 Open-Load Detection
        3. 8.3.5.3 Thermal Protection Behavior
        4. 8.3.5.4 Overvoltage (OVP) Protection
        5. 8.3.5.5 UVLO Protection
        6. 8.3.5.6 Reverse Polarity Protection
        7. 8.3.5.7 Protection for MCU I/Os
      6. 8.3.6 Diagnostic Enable Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Working Mode
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Dynamically Changing Current Limit
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
        3. 9.4.2.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

VS = 6 V to 60 V, TA = -40°C to 125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VS SUPPLY VOLTAGE AND CURRENT
ILNOM Continuous load current VEN = HI, TAMB = 85°C 6 A
IQ, VS VS quiescent current  VEN = HI, IOUT = 0A VDIAG_EN = LO 1 1.5 mA
VDIAG_EN = HI 1.1 1.9 mA
ISTBY, VS Total device standby current (including MOSFET) with diagnostics disabled VS ≤ 60 V, VEN = VDIAG_EN = LO, VOUT = 0 V TJ = 85°C 0.25 0.7 µA
TJ = 150°C 0.63 6 µA
IOUT(OFF) Output leakage current VS ≤ 60 V, VEN = VDIAG_EN = 0 V, VOUT = 0 V TJ = 85°C 0.4 µA
TJ = 150°C  0.2 12 µA
tSTBY Standby mode delay time VEN = VDIAG_EN = 0 V to standby 20 ms
VS UNDERVOLTAGE LOCKOUT (UVLO) INPUT
VS,UVLOR VS undervoltage lockout rising Measured with respect to the GND pin of the device 5.0 5.4 5.75 V
VS,UVLOF VS undervoltage lockout falling 4.1 4.5 4.85 V
VS OVERVOLTAGE LOCKOUT (OVLO) INPUT
VS,OVPR VS overvoltage protection rising Measured with respect to the GND pin of the device, VEN = HI Measured with respect to the GND pin of the device 62 65 68 V
VS,OVPRF VS overvoltage protection recovery falling Measured with respect to the GND pin of the device, VEN = HI Measured with respect to the GND pin of the device 60 63 66 V
VS,OVPRH VS overvoltage protection threshold hysteresis Measured with respect to the GND pin of the device Measured with respect to the GND pin of the device 2 V
tVS,OVP VS overvoltage protection deglitch time Time from triggering the OVP fault to FET turn-off 125 µs
VDS CLAMP
VDS,Clamp VDS clamp voltage FET current = 10 mA VS = 24 V 65 72.5 80 V
VS = 6 V 48 53 58 V
RON CHARACTERISTICS
RON On-resistance
(Includes MOSFET and package)		 VS = 6 V to 60 V, 0.5 A ≤ IOUT ≤ 6 A TJ = 25°C 30 mΩ
TJ = 125°C 50 mΩ
TJ = 150°C 60 mΩ
RON(REV) On-resistance during reverse polarity VS = –24 V, IOUT = 2 A TJ = -40°C to  150°C 30 60 mΩ
CURRENT LIMIT CHARACTERISTICS
ILIM_INT ILIM Current Limitation level internal reference RILIM =  Open or Out of range 8 A
RILIM = GND 16 A
KCL Current Limit Ratio RILIM = 10 kΩ to 50 kΩ 80 100 120 A * kΩ
THERMAL SHUTDOWN CHARACTERISTICS
TABS Thermal shutdown 154 165 °C
TREL Relative thermal shutdown 60 °C
tRETRY Retry time Time from fault shutdown until switch re-enable (thermal shutdown). 2 ms
Fault Response Fault reponse to Thermal Shutdown Configurable via Latch pin
THYS Thermal shutdown hysteresis 20 °C
FAULT PIN CHARACTERISTICS
VFAULT FAULT low output voltage IFAULT = 2.5 mA 0.5 V
tFAULT_FLT Fault indication-time VDIAG_EN = 5 V
Time between fault and FAULT asserting		 60 µs
tFAULT_SNS Fault indication-time VDIAG_EN = 5 V
Time between fault and ISNS settling at VSNSFH		 60 µs
CURRENT SENSE CHARACTERISTICS
KSNS1 Current sense ratio
IOUT / ISNS		 1300 A/A
ISNSI Current sense current and accuracy VEN = VDIAG_EN = 5 V IOUT = 6 A 4.61 mA
–6 6 %
IOUT = 4 A 3.3 mA
–3 3 %
IOUT = 2 A   1.66   mA
–4 4 %
IOUT = 1 A   0.833   mA
–4 4 %
IOUT = 500 mA   0.417   mA
–6 6 %
IOUT = 200 mA 0.15   mA
–10 10 %
IOUT = 100 mA   0.073   mA
–15 15 %
IOUT = 50 mA 0.035 mA
–25 25 %
IOUT = 20 mA 0.012 mA
–40 40 %
IOUT = 10 mA 0.0088 mA
–60 60 %
SNS PIN CHARACTERISTICS
VSNSFH VSNS fault high-level VDIAG_EN = 5 V 4.5 5 5.77 V
VSNSFH VSNS fault high-level VDIAG_EN = VIH to 3.3 V 3.0 3.3 3.82 V
ISNSFLT ISNS fault high-level VDIAG_EN > VIH,DIAG_EN 5.3 6.4 mA
ISNSleak ISNS leakage VDIAG_EN = 5 V, IL = 0 mA 1.3 µA
VS_ISNS VS headroom needed for full current sense and fault functionality VDIAG_EN = 3.3 V 6 V
VDIAG_EN = 5 V 6.5 V
OPEN LOAD DETECTION CHARACTERISTICS
VOL_OFF OFF state open-load (OL) detection voltage VEN = 0 V, VDIAG_EN = 5 V 1.5 2 2.5 V
ROL_OFF OFF state open-load (OL) detection internal pull-up resistor VEN = 0 V, VDIAG_EN = 5 V 120 150 180 kΩ
tOL_OFF OFF state open-load (OL) detection deglitch time VEN = 0 V, VDIAG_EN = 5 V, When Vs – VOUT < VOL, duration longer than tOL. Openload detected. 480 700 µs
tOL_OFF_1 OL_OFF and STB indication-time from EN falling VEN = 5 V to 0 V, VDIAG_EN = 5 V
IOUT = 0 mA, VOUT = Vs - VOL		 310 700 µs
tOL_OFF_2 OL and STB indication-time from DIA_EN rising VEN = 0 V, VDIAG_EN = 0 V to 5 V
IOUT = 0 mA, VOUT = VS - VOL		 700 µs
DIAG_EN PIN CHARACTERISTICS
VIL, DIAG_EN Input voltage low-level No GND Network 0.8 V
VIH, DIAG_EN Input voltage high-level No GND Network 1.5 V
VIHYS, DIAG_EN Input voltage hysteresis 280 mV
RDIAG_EN Internal pulldown resistor 200 350 500 kΩ
IIL, DIAG_EN Input current low-level VDIAG_EN = 0.8 V 2.2 µA
IIH, DIAG_EN Input current high-level VDIAG_EN = 5 V 14 µA
EN PIN CHARACTERISTICS
VIL, EN Input voltage low-level No GND Network 0.8 V
VIH, EN Input voltage high-level No GND Network 1.5 V
VIH, EN Input voltage hysteresis 280 mV
REN Internal pulldown resistor 200 350 500 kΩ
IIL, EN Input current low-level VEN = 0.8 V 2.2 µA
IIH, EN Input current high-level VEN = 5 V 14 µA
LATCH PIN CHARACTERISTICS
VIL, LATCH Input voltage low-level No GND Network 0.8 V
VIH, LATCH Input voltage high-level No GND Network 1.5 V
VIHYS, LATCH Input voltage hysteresis 280 mV
RLATCH Internal pulldown resistor 0.7 1 1.4 MΩ
IIL, LATCH Input current low-level VDIA_EN = 0.8 V 2.2 µA
IIH, LATCH Input current high-level VDIA_EN = 5 V 14 µA