JAJSJN2D November 2007 – October 2020 TPS2041B-Q1 , TPS2042B-Q1 , TPS2051B-Q1
PRODUCTION DATA
The low on-resistance on the N-channel MOSFET allows the small surface-mount packages to pass large currents. The thermal resistances of these packages are high compared to those of power packages; it is good design practice to check power dissipation and junction temperature. Begin by determining the rDS(ON) of the N-channel MOSFET relative to the input voltage and operating temperature. As an initial estimate, use the highest operating ambient temperature of interest and read rDS(ON) from GUID-0FF1847F-B01B-41B3-9A8D-D42D66B7DAEC.html#SLVS782FIG5883. Using this value, the power dissipation per switch can be calculated by #SLVS7821040:
Multiply this number by the number of switches being used. This step renders the total power dissipation from the N-channel MOSFETs.
Finally, calculate the junction temperature with #SLVS7826602:
where
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees, repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally sufficient to get a reasonable answer.