SLVSA01C May 2011 – June 2016 TPS2062-Q1 , TPS2065-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
Input voltage, VI(IN)(2) | –0.3 | 6 | V |
Output voltage(2), VO(OUTx) | –0.3 | 6 | V |
Input voltage, VI(ENx) | –0.3 | 6 | V |
Voltage, VI(OCx) | –0.3 | 6 | V |
Continuous output current, IO(OUTx) | Internally limited | ||
Continuous total power dissipation | See Dissipation Ratings | ||
Operating virtual junction temperature range, TJ | –40 | 150 | °C |
Storage temperature range, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1000 | |||
Machine model (MM) | ±100 |
MIN | MAX | UNIT | |
---|---|---|---|
Input voltage, VI(IN) | 2.7 | 5.5 | V |
Input voltage, VI(ENx) | 0 | 5.5 | V |
Continuous output current, IO(OUTx) | 0 | 1 | A |
Ambient temperature, TA | –40 | 125 | °C |
Operating virtual junction temperature, TJ | –40 | 150 | °C |
THERMAL METRIC(1) | TPS2062-Q1 | TPS2065-Q1 | UNIT | |
---|---|---|---|---|
DGN (MSOP-PowerPAD) |
DGN (MSOP-PowerPAD) |
|||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 65 | 57.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 52.8 | 54.7 | °C/W |
RθJB | Junction-to-board thermal resistance | 42.3 | 38.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 3.1 | 3.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 41.9 | 38.6 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 17.7 | 10.1 | °C/W |
PARAMETER | TEST CONDITIONS(1) | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
POWER SWITCH | |||||||
rDS(ON) | Static drain-source ON-state resistance, 5-V operation and 3.3-V operation | VI(IN) = 5 V or 3.3 V, IO = 1 A, –40°C ≤ TA ≤ 125°C | 70 | 135 | mΩ | ||
Static drain-source ON-state resistance, 2.7-V operation(2) | VI(IN) = 2.7 V, IO = 1 A, –40°C ≤ TA ≤ 125°C | 75 | 150 | mΩ | |||
tr | Rise time, output | CL = 1 μF, RL= 5 Ω, TA = 25°C | VI(IN) = 5.5 V | 0.6 | 1.5 | ms | |
VI(IN) = 2.7 V | 0.4 | 1 | |||||
tf | Fall time, output | CL = 1 μF, RL= 5 Ω, TA = 25°C | VI(IN) = 5.5 V | 0.05 | 0.5 | ms | |
VI(IN) = 2.7 V | 0.05 | 0.5 | |||||
ENABLE INPUT EN OR EN | |||||||
VIH | High-level input voltage | 2.7 V ≤ VI(IN) ≤ 5.5 V | 2 | V | |||
VIL | Low-level input voltage | 2.7 V ≤ VI(IN) ≤ 5.5 V | 0.8 | ||||
II | Input current | VI(ENx) = 0 V or 5.5 V | –1 | 1 | μA | ||
tON | Turnon time | CL = 100 μF, RL= 5 Ω | 3 | ms | |||
toff | Turnoff time | CL = 100 μF, RL= 5 Ω | 10 | ||||
CURRENT LIMIT | |||||||
IOS | Short-circuit output current(1) | VI(IN) = 5 V, OUT connected to GND, Device enabled into short-circuit |
TA = 25°C | 1.1 | 1.5 | 1.9 | A |
–40°C ≤ TA ≤ 125°C | 1.1 | 1.5 | 2.1 | ||||
IOC_TRIP | Overcurrent trip threshold | VI(IN) = 5 V, current ramp (≤ 100 A/s) on OUT | 1.6 | 2.3 | 2.9 | A | |
SUPPLY CURRENT (TPS2062-Q1) | |||||||
Supply current, low-level output | No load on OUT, VI(ENx) = 5.5 V | TA = 25°C | 0.5 | 1 | μA | ||
–40°C ≤ TA ≤ 125°C | 0.5 | 5 | |||||
Supply current, high-level output | No load on OUT, VI(ENx) = 0 V | TA = 25°C | 50 | 70 | μA | ||
–40°C ≤ TA ≤ 125°C | 50 | 90 | |||||
Leakage current | OUT connected to ground, VI(ENx) = 5.5 V | –40°C ≤ TA ≤ 125°C | 1 | μA | |||
Reverse leakage current | VI(OUTx) = 5.5 V, IN = ground | TA = 25°C | 0.2 | μA | |||
SUPPLY CURRENT (TPS2065-Q1) | |||||||
Supply current, low-level output | No load on OUT, VI(EN) = 0 V | TA = 25°C | 0.5 | 1 | μA | ||
–40°C ≤ TA ≤ 125°C | 0.5 | 5 | |||||
Supply current, high-level output | No load on OUT, VI(EN) = 5.5 V | TA = 25°C | 43 | 60 | μA | ||
–40°C ≤ TA ≤ 125°C | 43 | 70 | |||||
Leakage current | OUT connected to ground, VI(EN) = 0 V | –40°C ≤ TA ≤ 125°C | 1 | μA | |||
Reverse leakage current | VI(OUTx) = 5.5 V, IN = ground | TA = 25°C | 0 | μA | |||
UNDERVOLTAGE LOCKOUT | |||||||
Low-level input voltage, IN | 2 | 2.5 | V | ||||
Hysteresis, IN | TA = 25°C | 75 | mV | ||||
OVERCURRENT OC1 AND OC2 | |||||||
Output low voltage, VOL(OCx) | IO(OCx) = 5 mA | 0.4 | V | ||||
Off-state current | VO(OCx) = 5 V or 3.3 V | 1 | μA | ||||
OC deglitch(2) | OCx assertion or deassertion | 4 | 8 | 15 | ms | ||
THERMAL SHUTDOWN(3) | |||||||
Thermal shutdown threshold | 135 | °C | |||||
Recovery from thermal shutdown | 125 | °C | |||||
Hysteresis | 10 | °C |
PACKAGE | TA ≤ 25°C POWER RATING |
DERATING FACTOR ABOVE TA = 25°C |
TA = 125°C POWER RATING |
---|---|---|---|
DGN-8 | 2.14 W | 17.123 mW/°C | 428 mW |