JAJSCP4 December   2016 TPS2065D

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: TJ = TA = 25°C
    6. 7.6 Electrical Characteristics: -40°C ≤ TJ ≤ 125°C
    7. 7.7 Timing Requirements: -40°C ≤ TJ ≤ 125°C
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout
      2. 8.3.2 Enable
      3. 8.3.3 Internal Charge Pump
      4. 8.3.4 Current Limit
      5. 8.3.5 FLT
      6. 8.3.6 Output Discharge
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input and Output Capacitance
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation and Junction Temperature
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントの更新通知を受け取る方法
    2. 12.2 コミュニティ・リソース
    3. 12.3 商標
    4. 12.4 静電気放電に関する注意事項
    5. 12.5 用語集
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)(3)
MIN MAX UNIT
Voltage range on IN, OUT, EN, FLT (3) –0.3 6 V
Voltage range from IN to OUT –6 6 V
Maximum junction temperature, TJ Internally Limited
Storage temperature, Tstg –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Absolute maximum ratings apply over recommended junction temperature range.
(3) Voltages are with respect to GND unless otherwise noted.
(4) VOUT was surged on a pcb with input and output bypassing per Input and Output Capacitance (except input capacitor was 22 µF) with no device failures.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
IEC 61000-4-2 contact discharge (4) ±8000
IEC 61000-4-2 air-gap discharge ±15000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VIN Input voltage, IN 4.5 5.5 V
VEN Input voltage, EN 0 5.5 V
VIH High-level input voltage, EN 2 V
VIL Low-level input voltage, EN 0.7 V
IOUT Continuous output current, OUT(1) 1 A A
TJ Operating junction temperature –40 125 °C
IFLT Sink current into FLT 0 5 mA
(1) Some package and current rating may request an ambient temperature derating of 85°C.

7.4 Thermal Information

THERMAL METRIC(1) TPS2065D UNIT
DBV (SOT-23)
5 PINS
RθJA Junction-to-ambient thermal resistance 224.9 °C/W
RθJCtop Junction-to-case (top) thermal resistance 95.2 °C/W
RθJB Junction-to-board thermal resistance 51.4 °C/W
ψJT Junction-to-top characterization parameter 6.6 °C/W
ψJB Junction-to-board characterization parameter 50.3 °C/W
RθJCbot Junction-to-case (bottom) thermal resistance N/A °C/W
RθJACustom See Power DIssipation and Junction Temperature 139.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics: TJ = TA = 25°C(1)

Unless otherwise noted: VIN = 5 V, VEN = VIN, IOUT = 0 A. See Device Comparison Table for the rated current of each part number. Parametrics over a wider operational range are shown in Electrical Characteristics: –40°C ≤ TJ ≤ 125°C.
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
RDS(on) Input – output resistance 1-A rated output, 25°C DBV 96 110 mΩ
1-A rated output,
–40°C ≤ (TJ , TA) ≤ 85°C		 DBV 96 130 mΩ
CURRENT LIMIT
IOS(3) Current limit, See Figure 6 1-A rated output 1.3 1.55 1.8 A
SUPPLY CURRENT
ISD Supply current, switch disabled IOUT = 0 A 0.01 1 µA
–40°C ≤ (TJ , TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A 2
ISE Supply current, switch enabled IOUT = 0 A 60 70 µA
–40°C ≤ (TJ , TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A 85
IREV Reverse leakage current VOUT = 5 V, VIN = 0 V, measure IVOUT 0.1 1 µA
–40°C ≤ (TJ , TA) ≤ 85°C, VOUT = 5 V, VIN = 0 V, measure IVOUT 5
OUTPUT DISCHARGE
RPD Output pulldown resistance(2) VIN = VOUT = 5 V, disabled 400 470 600 Ω
(1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2) These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's product warranty.
(3) See Current Limit section for explanation of this parameter.

7.6 Electrical Characteristics: –40°C ≤ TJ ≤ 125°C

Unless otherwise noted:4.5 V ≤ VIN ≤ 5.5 V, VEN = VIN, IOUT = 0 A, typical values are at 5 V and 25°C. See Device Comparison Table for the rated current of each part number.
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
RDS(ON) Input – output resistance 1-A rated output DBV 96 154 mΩ
ENABLE INPUT (EN)
Threshold Input rising 1 1.45 2 V
Hysteresis 0.07 0.13 0.20 V
Leakage current (VEN) = 0 V –1 0 1 µA
CURRENT LIMIT
IOS(3) Current limit, See Figure 22 1-A rated output 1.2 1.55 1.9 A
tIOS Short circuit response time(2) VIN = 5 V (see Figure 6),
One-half full load → RSHORT = 50 mΩ,
Measure from application to when current falls below 120% of final value		 2 µs
SUPPLY CURRENT
ISD Supply current, switch disabled IOUT = 0 A 0.01 10 µA
ISE Supply current, switch enabled IOUT = 0 A 65 90 µA
IREV Reverse leakage current VOUT = 5.5 V, VIN = 0 V, measure IVOUT 0.2 20 µA
UNDERVOLTAGE LOCKOUT
VUVLO Rising threshold VIN↑ 3.5 3.75 4 V
Hysteresis(2) VIN↓ 0.14 V
FLT
Output low voltage, FLT IFLT = 1 mA 0.2 V
Off-state leakage VFLT = 5.5 V 1 µA
tFLT FLT deglitch FLT assertion or deassertion deglitch 6 9 12 ms
OUTPUT DISCHARGE
RPD Output pulldown resistance VIN = 4 V, VOUT = 5 V, disabled 350 560 1200 Ω
VIN = 5 V, VOUT = 5 V, disabled 300 470 800
THERMAL SHUTDOWN
Rising threshold (TJ) In current limit 135 °C
Not in current limit 155
Hysteresis (2) 20
(1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2) These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's product warranty.
(3) See Current Limit for explanation of this parameter.

7.7 Timing Requirements: –40°C ≤ TJ ≤ 125°C

MIN NOM MAX UNIT
tON Turnon time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↑ or EN ↓.
See Figure 1, Figure 3, and Figure 4
1 A Rated		 1 1.4 1.8 ms
tOFF Turnoff time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↓ or EN ↑.
See Figure 1, Figure 3, and Figure 4
1 A Rated		 1.3 1.65 2 ms
tR Rise time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V. See Figure 2
1 A Rated		 0.4 0.55 0.7 ms
tF Fall time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V. See Figure 2
1 A Rated		 0.25 0.35 0.45 ms
TPS2065D tst_load_lvsau6.gif Figure 1. Output Rise and Fall Test Load
TPS2065D pwr_on_off_lvsau6.gif Figure 2. Power-On and Power-Off Timing
TPS2065D enable_t_hi_lvsau6.gif Figure 3. Enable Timing, Active High Enable
TPS2065D enable_t_low_lvsau6.gif Figure 4. Enable Timing, Active Low Enable
TPS2065D short_cir_lvsau6.gif Figure 5. Output Short Circuit Parameters
TPS2065D cur_limit_lvsau6.gif Figure 6. Output Characteristic Showing Current Limit

7.8 Typical Characteristics

TPS2065D G019_Deglitch_vs_Temp.gif
All Versions, 5 V
Figure 7. Deglitch Period (TFLT) vs Temperature
TPS2065D G021_Ios_vs_Tj.gif
VIN = 5 V
Figure 9. Short Circuit Current (IOS) vs Temperature
TPS2065D G023_Isd_vs_Tj.gif
Input Voltage = 5.5 V
Figure 11. Disabled Supply Current (ISD) vs Temperature
TPS2065D G025_Irev_vs_Vout.gif
All Unit Types VIN = 0 V
Figure 13. Reverse Leakage Current (IREV) vs Output Voltage
TPS2065D G027_Ise_vs_Vin.png
Figure 15. Enabled Supply Current (ISE) vs Input Voltage
TPS2065D G029_tr_vs_Tj.gif
COUT = 1 µF RLOAD = 100 Ω
Figure 17. Output Rise Time (TR) vs Temperature
TPS2065D G031_t_recovery_vs_Ipk.gif
VIN = 5 V CIN = 730 µF IEND = 1.68 A
Figure 19. Recovery vs Current Peak
TPS2065D G020_Idscg_vs_Vout.gif
VIN = 5 V
Figure 8. Output Discharge Current vs Output Voltage
TPS2065D G022_Irev_vs_Tj.gif
All Unit Types, 5 V
Figure 10. Reverse Leakage Current (IREV) vs Temperature
TPS2065D G024_Isd_vs_Vin.gif
All Unit Types
Figure 12. Disabled Supply Current (ISD) vs Input Voltage
TPS2065D G026_Ise_vs_Tj.gif
All Unit Types VIN = 5.5 V
Figure 14. Enabled Supply Current (ISE) vs Temperature
TPS2065D G028_tf_vs_Tj.gif
COUT = 1 µF RLOAD = 100 Ω
Figure 16. Output Fall Time (TF) vs Temperature
TPS2065D G030_Rdson_vs_Tj.gif
VIN = 5 V
Figure 18. Input-Output Resistance (RDS(ON)) vs Temperature