JAJSPX1G January   2008  – June 2024 TPS2062A , TPS2066A

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Typical Characteristics
  7. 6 Parameter Measurement Information
    1.     13
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Overcurrent
      1. 7.3.1 Overcurrent Conditions (TPS2062ADRB, TPS2066ADRB, and TPS2066AD)
      2. 7.3.2 Overcurrent Conditions (TPS2062AD)
    4. 7.4 OCx Response
    5. 7.5 Undervoltage Lockout (UVLO)
    6. 7.6 Enable ( ENx or ENx)
    7. 7.7 Thermal Sense
  9. 8 Application Information
    1. 8.1 Power-Supply Considerations
    2. 8.2 Input and Output Capacitance
    3. 8.3 Power Dissipation and Junction Temperature
    4. 8.4 Universal Serial Bus (USB) Applications
    5. 8.5 Self-powered and Bus-Powered Hubs
    6. 8.6 Low-Power Bus-Powered And High-Power Bus-Powered Functions
    7. 8.7 USB Power-Distribution Requirements
  10. 9 Device and Documentation Support
    1. 9.1 ドキュメントの更新通知を受け取る方法
    2. 9.2 サポート・リソース
    3. 9.3 Trademarks
    4. 9.4 静電気放電に関する注意事項
    5. 9.5 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5.4 Electrical Characteristics

over recommended operating junction temperature range, VI = 5.5 V, IO = 1 A, V/ENx = 0 V (TPS2062A) or VENx = 5.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
rDS(on) Static drain-source on-state resistance 2.7 V ≤ VI ≤ 5.5 V, IO = 1 A TJ = 25°C 70 100 mΩ
–40°C ≤ TJ ≤ 125°C 135
tr Rise time, output VI = 5.5 V CL = 1 μF,
RL = 5 Ω, TJ = 25°C		 0.6 1.5 ms
VI = 2.7 V 0.4 1
tf Fall time, output VI = 5.5 V 0.05 0.5
VI = 2.7 V 0.05 0.5
ENABLE INPUT EN OR EN
VIH High-level input voltage 2.7 V ≤ VI ≤ 5.5 V 2 V
VIL Low-level input voltage 0.8
II Input current -0.5 0.5 μA
ton Turnon time CL = 100 μF, RL = 5 Ω 3 ms
toff Turnoff time 3
CURRENT LIMIT
IOS Short-circuit output current per channel VI = 5 V, OUTx connected to GND,
device enabled into short-circuit		 TJ = 25°C 1.2 1.6 2.0 A
–40°C ≤ TJ ≤ 125°C 1.1 1.6 2.1
IOC(2) Overcurrent trip threshold VIN = 5 V TPS2062ADRB, TPS2066AD, TPS2066ADRB IOS 2.1 2.45 A
IOS_G Ganged short-circuit output current VI = 5 V, OUT1 & OUT2 connected to GND, device enabled into short-circuit TJ = 25°C 2.4 3.2 4.0 A
–40°C ≤ TJ ≤ 125°C 2.2 3.2 4.2
IOC_G(2) Ganged overcurrent trip threshold VI = 5 V, OUT1 & OUT2 tied together TPS2062ADRB, TPS2066AD, TPS2066ADRB IOS_G 4.2 4.9
SUPPLY CURRENT (All devices excluding TPS2062AD)
IIL Supply current, device disabled No load on OUT TJ = 25°C 0.5 1 μA
–40°C ≤ TJ ≤ 125°C 0.5 5
IIH Supply current, device enabled No load on OUT TJ = 25°C 50 60 μA
–40°C ≤ TJ ≤ 125°C 50 75
Ilkg Leakage current, device disabled OUT connected to ground
 –40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VO = 5.5 V, VI = 0 V TJ = 25°C 0.2 μA
SUPPLY CURRENT (TPS2062AD)
IIL Supply current, device disabled No load on OUT TJ = 25°C 0.5 1 μA
–40°C ≤ TJ ≤ 125°C 0.5 5
IIH Supply current, device enabled No load on OUT TJ = 25°C 95 120 μA
–40°C ≤ TJ ≤ 125°C 95 120
Ilkg Leakage current, device disabled OUT connected to ground
 –40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VO = 5.5 V, VI = 0 V TJ = 25°C 0.2 μA
UNDERVOLTAGE LOCKOUT (All devices excluding TPS2062AD)
Low-level input voltage, IN VI rising 2 2.5 V
Hysteresis, IN VI falling 75 mV
UNDERVOLTAGE LOCKOUT (TPS2062AD)
Low-level input voltage, IN VI rising 2 2.6 V
Hysteresis, IN VI falling 75 mV
OVERCURRENT FLAG
VOL Output low voltage, OC I/OCx = 5 mA 0.4 V
Off-state current V/OCx = 5.0 V or 3.3 V 1 μA
OC deglitch OCx assertion or de-assertion 4 8 15 ms
THERMAL SHUTDOWN(3)
Thermal shutdown threshold 135 °C
Recovery from thermal shutdown 125 °C
Hysteresis 10 °C
(1) Pulsed load testing used to maintain junction temperature close to ambient
(2) TPS2062AD does not have an overcurrent trip threshold. The current limit is defined by IOS. See Section 7.3 for more details.
(3) The thermal shutdown only reacts under overcurrent conditions.