JAJSK67E June   2014  – October 2020

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical DC Characteristics
    8. 7.8 Typical AC Characteristics (TPS22914B/15B)
    9. 7.9 Typical AC Characteristics (TPS22914C/15C)
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 On and Off Control
      2. 9.3.2 Input Capacitor (CIN)
      3. 9.3.3 Output Capacitor (CL)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 VIN to VOUT Voltage Drop
        2. 10.2.2.2 Inrush Current
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Thermal Considerations
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Related Links
    3. 13.3 ドキュメントの更新通知を受け取る方法
    4. 13.4 サポート・リソース
    5. 13.5 Trademarks
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 用語集
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.1 Overview

The device is a 5.5-V, 2-A load switch in a 4-pin YFP package. To reduce voltage drop for low voltage and high current rails, the device implements an ultra-low resistance N-channel MOSFET which reduces the drop out voltage through the device.

The device has a controlled and fixed slew rate which helps reduce or eliminate power supply droop due to large inrush currents. During shutdown, the device has very low leakage currents, thereby reducing unnecessary leakages for downstream modules during standby. Integrated control logic, driver, charge pump, and output discharge FET eliminates the need for any external components, which reduces solution size and bill of materials (BOM) count.