SLVSCT5D March 2015 – September 2016 TPS22953 , TPS22954
PRODUCTION DATA.
The TPS22953/4 are 5.7-V, 5-A load switches in 10-pin SON packages. To reduce voltage drop for low voltage, high current rails the device implements a low resistance N-channel MOSFET, which reduces the drop out voltage through the device at high currents. The integrated adjustable undervoltage lockout (UVLO) and adjustable power good (PG) threshold provides voltage monitoring as well as robust power sequencing.
The adjustable rise time control of the device greatly reduces inrush current for a wide variety of bulk load capacitances, thereby reducing or eliminating power supply droop. The switch is independently controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals. A 15-Ω on-chip load resistor is integrated into the device for output quick discharge when switch is turned off.
During shutdown, the device has very low leakage currents, thereby reducing unneccessary leakages for downstream modules during standby. Integrated power monitoring functionality, control logic, driver, power supply, and output discharge FET eliminates the need for any external components, which reduces solution size and BOM count.
The EN pin controls the state of the switch. When the voltage on EN has exceeded VIH,EN the switch is enabled. When EN goes below VIL,EN the switch is disabled.
The EN pin has a blanking time of tBLANK on the rising edge once the VIH,EN threshold has been exceeded. It also has a de-glitch time of tDEGLITCH when the voltage has gone below VIL,EN.
The EN pin can also be configured via an external resistor divider to monitor a voltage signal for input UVLO. See Equation 1 and Figure 53 on how to configure the EN pin for input UVLO.
where
The SNS pin of the device can be used to monitor the output voltage of the device or another voltage rail. The pin can be configured with an external resistor divider to set the desired trip point for the voltage being monitored or be tied to OUT directly. If the voltage on the SNS pin exceeds VIH,SNS, the voltage being monitored on the SNS pin is considered to be valid high. The voltage on the SNS pin must be greater than VIH,SNS for at least tBLANK before PG is asserted high. If the voltage on the SNS pin goes below VIL,SNS, then the switch powers cycle (i.e., the switch is disabled and re-enabled). For proper functionality of the device, this pin must not be left floating. If a resistor divider is not being used for voltage sensing, this pin can be tied directly to VOUT.
The SNS pin has a blanking time of tBLANK on the rising edge once the VIH,SNS threshold has been exceeded. It has a de-glitch time of tDEGLITCH when the voltage has gone below VIL,SNS.
See Equation 2 and Figure 54 on how to configure the SNS pin for voltage monitoring.
where
The PG pin is only asserted high when the voltage on EN has exceeded VIH,EN and the voltage on SNS has exceeded VIH,SNS. There is a tBLANK time, typically 100 µs, between the SNS voltage exceeding VIH,SNS and PG being asserted high. If the voltage on EN goes below VIL,EN or the voltage on SNS goes below VIL,SNS, PG is de-asserted. There is a tDEGLITCH time, typically 5µs, between the EN voltage or SNS voltage going below their respective VIL levels and PG being pulled low.
PG is an open drain pin and must be pulled up with a pull-up resistor. Be sure to never exceed the maximum operating voltage on this pin. If PG is not being used in the application, tie it to GND for proper device functionality.
For proper PG operation, the BIAS voltage must be within the recommended operating range. In systems that are very sensitive to noise or have long PG traces, it is recommended to add a small capacitance from PG to GND for decoupling.
The falling edge of the SNS pin below VIL,SNS is considered a fault case and causes the load switch to be disabled for tRESTART (typically 2 ms). After the tRESTART time, the switch is automatically re-enabled as long as EN is still above VIH,EN . In the case the SNS pin is being used to monitor VOUT or a downstream voltage, the restart helps to protect against excessive over-current if there is a quick short to GND. See Figure 55.
The falling edge of the SNS pin below VIL,SNS is considered a fault case and causes the load switch to be disabled for tRESTART (typically 2 ms). The SNS pin can be driven by an MCU to manually reset the load switch. After the tRESTART time, the switch is automatically re-enabled as long as EN is still above VIH,EN , even is SNS is held low. The PG pin stays low until the switch is re-enabled and the SNS pin rises above VIH,SNS. See Figure 56.
If the SNS pin is brought above VIH,SNS within the tRESTART time, the switch still waits to re-enable. The PG pin also stays low until tBLANK after switch is re-enabled. In this case, PG indicates when the switch is enabled and capable of being reset again. See Figure 57.
If the junction temperature of the device exceeds TSD, the switch is disabled. The device is enabled once the junction temperature drops by TSDHYS as long as EN is still greater than VIH,EN.
When the switch is disabled (either by de-asserting EN or SNS, triggering thermal shutdown, or losing power), the reverse current blocking (RCB) feature of the device is engaged within tRCB, typically 10 μs. Once the RCB is engaged, the reverse current from the OUT pin to the IN pin is limited to IRCB,IN, typically 0.01 μA.
The quick output discharge (QOD) transistor is engaged indefinitely whenever the switch is disabled and the recommended VBIAS voltage is met. During this state, the QOD resistance (RPD) discharges VOUT to GND. It is not recommended to apply a continuous DC voltage to OUT when the device is disabled.
The QOD transistor can remain active for a short period of time even after VBIAS loses power. This brief period of time is defined as tDIS. For best results, it is recommended the device get disabled before VBIAS goes below the minimum recommended voltage. The waveform in Figure 58 shows the behaviour when power is applied and then removed in a typical application.
At the end of the tDIS time, it is not guaranteed that VOUT will be 0 V since the final voltage is dependent upon the initial voltage and the CL capacitor. The final VOUT can be calculated with Equation 3 for a given initial voltage and CL capacitor.
where
For optimal RON performance, make sure VIN ≤ VBIAS. The device is still functional if VIN > VBIAS but it exhibits RON greater than what is listed in the Electrical Characteristics table. See Figure 59 for an example of a typical device. Notice the increasing RON as VIN increases. Be sure to never exceed the maximum voltage rating for VIN and VBIAS.
A capacitor to GND on the CT pin sets the slew rate for VOUT. An appropriate capacitance value must be placed on CT such that the IMAX and IPLS specifications of the device are not violated. The capacitor to GND on the CT pin must be rated for 25 V or higher. An approximate formula for the relationship between CT (except for CT = open) and the slew rate for any VBIAS is shown in Equation 4.
where
Rise time can be calculated by multiplying the input voltage (typically 10% to 90%) by the slew rate. Table 1 contains rise time values measured on a typical device.
CTx (pF) | RISE TIME (µs) 10%–90%, CL = 0.1 µF, VBIAS = 2.5 V to 5.7 V, RL=10 Ω LOAD. TYPICAL VALUES AT 25°C, 25 V X7R 10% CERAMIC CAP |
|||||
---|---|---|---|---|---|---|
5 V | 3.3 V | 1.8 V | 1.5 V | 1.2 V | 0.7 V | |
Open | 140 | 98 | 62 | 54 | 46 | 32 |
220 | 444 | 301 | 175 | 150 | 124 | 81 |
470 | 767 | 518 | 299 | 255 | 210 | 133 |
1000 | 1492 | 994 | 562 | 474 | 387 | 245 |
2200 | 3105 | 2050 | 1151 | 961 | 787 | 490 |
4700 | 6420 | 4246 | 2365 | 1980 | 1612 | 998 |
10000 | 14059 | 9339 | 5183 | 4331 | 3533 | 2197 |
The TPS2295x operates regardless of power-on and power-off sequencing order. The order in which voltages are applied to IN, BIAS, and EN will not damage the device as long as the voltages do not exceed the absolute maximum operating conditions. If voltage is applied to EN before IN and BIAS, the slew rate of VOUT will not be controlled. Also, turning off IN and/or BIAS while EN is high will not damage the device.
Table 2 describes what the OUT pin is connected to for a particular device as determined by the EN pin.
EN | TPS22953 | TPS22954 |
---|---|---|
L | OPEN | RPD to GND |
H | IN | IN |