CPn: 0.1-μF, 100-V, X7R ceramic between VPWR and Pn-
RSnA / RSnB: The port current sense resistors are a combination of two 0.51-Ω, 1% resistors in parallel (0.255 Ω). Dual 0.51-Ω, 1%, 0.25-W resistors in an 0805 SMT package are recommended. If a nominal 640 mA Policing (ICUT) threshold is selected, the maximum power dissipation for the resistor pair becomes approximately 115 mW (~57 mW each).
QPn: The port MOSFET can be a small, inexpensive device with average performance characteristics. BVDSS should be 100 V minimum. Target a MOSFET RDS(on) at VGS = 10 V of between 50 mΩ and 150 mΩ. The MOSFET GATE charge (QG) and input capacitance (CISS) should be less than 50 nC and 2000 pF respectively. The maximum power dissipation for QPn with RDS(on) = 100 mΩ at 640 mA nominal policing (ICUT) threshold is approximately 45 mW.
FPn: The port fuse should be a slow blow type rated for at least 60 VDC and above ~2 x ICUT(max). The cold resistance should be below 200 mΩ to reduce the DC losses. The power dissipation for FPn with a cold resistance of 180 mΩ at maximum ICUT is approximately 81 mW.
DPnA: The port TVS should be rated for the expected port surge environment. DPnA should have a minimum reverse standoff voltage of 58 V, peak pulse power rating of 600 W, and a maximum clamping voltage of less than 95 V at the expected peak surge current