JAJS365D January   2007  – October 2019 TPS2412 , TPS2413

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーションの図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Dissipation Ratings
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Definitions
      2. 9.3.2 TPS2412 vs TPS2413 – MOSFET Control Methods
      3. 9.3.3 N+1 Power Supply – Typical Connection
      4. 9.3.4 Input ORing – Typical Connection
      5. 9.3.5 System Design and Behavior With Transients
      6. 9.3.6 TPS2412 Regulation-Loop Stability
      7. 9.3.7 MOSFET Selection and R(RSET)
      8. 9.3.8 Gate Drive, Charge Pump and C(BYP)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
    1. 11.1 Recommended Operating Range
    2. 11.2 VDD, BYP, and Powering Options
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 関連リンク
    2. 13.2 コミュニティ・リソース
    3. 13.3 商標
    4. 13.4 静電気放電に関する注意事項
    5. 13.5 Glossary
  14. 14メカニカル、パッケージ、および注文情報

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • D|8
  • PW|8
サーマルパッド・メカニカル・データ

9.3.8 Gate Drive, Charge Pump and C(BYP)

Gate drive of 270 μA typical is generated by an internal charge pump and current limiter. A separate supply, VDD, is provided to avoid having the large charge pump currents interfere with voltage sensing by the A and C pins. The GATE drive voltage is referenced to V(A) as GATE will only be driven high when V(A) > V(C). The recommended capacitor on BYP (bypass) must be used to form a quiet supply for the internal high-speed comparator. V(GATE) must not exceed V(BYP).