JAJS365D January   2007  – October 2019 TPS2412 , TPS2413

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーションの図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
    1.     Pin Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Dissipation Ratings
    7. 8.7 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Definitions
      2. 9.3.2 TPS2412 vs TPS2413 – MOSFET Control Methods
      3. 9.3.3 N+1 Power Supply – Typical Connection
      4. 9.3.4 Input ORing – Typical Connection
      5. 9.3.5 System Design and Behavior With Transients
      6. 9.3.6 TPS2412 Regulation-Loop Stability
      7. 9.3.7 MOSFET Selection and R(RSET)
      8. 9.3.8 Gate Drive, Charge Pump and C(BYP)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
    1. 11.1 Recommended Operating Range
    2. 11.2 VDD, BYP, and Powering Options
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 関連リンク
    2. 13.2 コミュニティ・リソース
    3. 13.3 商標
    4. 13.4 静電気放電に関する注意事項
    5. 13.5 Glossary
  14. 14メカニカル、パッケージ、および注文情報

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • D|8
  • PW|8
サーマルパッド・メカニカル・データ

10.2.2 Detailed Design Procedure

The following is a summarized design procedure:

  1. Choose between the TPS2412 or 2413, see TPS2412 vs TPS2413 – MOSFET Control Methods.
  2. Choose the VDD source. Table 3 provides a guide for where to connect VDD that covers most cases. VDD may be directly connected to the supply, but an R(VDD) and C(VDD) of 10 Ω and 0.01 μF is recommended.

    3. Table 3. VDD Connection Guide

    VA < 3 V 3 V ≤ VA  ≤ 3.6 V VA > 3.6 V
    Bias Supply > 3 V VA or Bias Supply > 3 V. VC if always > 3 V VC, VA, or Bias for special configurations
  3. Noise voltage and impedance at the A pin should be kept low. C(A) may be required if there is noise on the bus, or A is not low impedance. If either of these is a concern, a C(A) of 0.01 μF or more may be required.
  4. Select C(BYP) as 2200 pF, X7R, 25-V or 50-V ceramic capacitor.
  5. Select the MOSFET based on considerations of voltage drop, power dissipated, voltage ratings, and gate capacitance. See sections: MOSFET Selection and RSET and TPS2412 Regulation-Loop Stability.
  6. Select R(RSET) based on which MOSFET was chosen and reverse current considerations – see MOSFET Selection and RSET. If the noise and transient environment is not well known, make provision for R(RSET) even when using the TPS2412.
  7. Make sure to connect RSVD to ground.