JAJS177F November   2003  – February 2020 TPS2490 , TPS2491

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーション
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  VCC
      2. 7.3.2  SENSE
      3. 7.3.3  GATE
      4. 7.3.4  OUT
      5. 7.3.5  EN
      6. 7.3.6  VREF
      7. 7.3.7  PROG
      8. 7.3.8  TIMER
      9. 7.3.9  PG
      10. 7.3.10 GND
    4. 7.4 Device Functional Modes
      1. 7.4.1 Board Plug-In ()
      2. 7.4.2 TIMER and PG Operation ()
      3. 7.4.3 Action of the Constant Power Engine ()
      4. 7.4.4 Response to a Hard Output Short ( and )
      5. 7.4.5 Automatic Restart ()
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Alternative Inrush Designs
        1. 8.1.1.1 Gate Capacitor (dV/dt) Control
        2. 8.1.1.2 PROG Inrush Control
      2. 8.1.2 Additional Design Considerations
        1. 8.1.2.1 Use of PG
        2. 8.1.2.2 Faults and Backplane Voltage Droop
        3. 8.1.2.3 Output Clamp Diode
        4. 8.1.2.4 Gate Clamp Diode
        5. 8.1.2.5 High Gate Capacitance Applications
        6. 8.1.2.6 Input Bypass
        7. 8.1.2.7 Output Short Circuit Measurements
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select RSNS and CL setting
        2. 8.2.2.2 Selecting the Hot Swap FET(s)
        3. 8.2.2.3 Select Power Limit
        4. 8.2.2.4 Set Fault Timer
        5. 8.2.2.5 Check MOSFET SOA
        6. 8.2.2.6 Set Under-Voltage Threshold
        7. 8.2.2.7 Choose R5, and CIN
        8. 8.2.2.8 Input and Output Protection
        9. 8.2.2.9 Final Schematic and Component Values
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 PC Board Guidelines
      2. 10.1.2 System Considerations
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 開発サポート
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 関連リンク
    4. 11.4 ドキュメントの更新通知を受け取る方法
    5. 11.5 コミュニティ・リソース
    6. 11.6 商標
    7. 11.7 静電気放電に関する注意事項
    8. 11.8 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DGS|10
サーマルパッド・メカニカル・データ
発注情報

7.3.3 GATE

Provides the high side (above VCC) gate drive for Q1. It is controlled by the internal gate drive amplifier, which provides a pull-up of 22 µA from an internal charge pump and a strong pulldown to ground of 75 mA (minimum). The pulldown current is a nonlinear function of the amplifier overdrive; it provides small drive for small overloads, but large overdrive for fast reaction to an output short. There is a separate pull-down of 2 mA to shut Q1 off when EN or UVLO cause this to happen. An internal clamp protects the gate of Q1 (to OUT) and generally eliminates the need for an external clamp in almost all cases for devices with 20-V VGS(MAX) ratings; an external Zener may be required to protect the gate of devices with VGS(MAX) < 16 V. A small series resistance (R5) of 10 Ω must be inserted in the gate lead if the CISS of Q1 > 200 pF, otherwise use 33 Ω for small MOSFETs.

A capacitor can be connected from GATE to ground to create a slower inrush with a constant current profile without affecting the amplifier stability. Add a series resistor of about 1 kΩ to the gate capacitor to maintain the gate clamping and current limit response time. Adding capacitance across Q1 gate to source requires some series damping resistance to avoid high-frequency oscillations.