SLVSCC8A May   2014  – December 2014 TPS2513A-Q1 , TPS2514A-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 BC1.2
      2. 7.3.2 Undervoltage Lockout (UVLO)
      3. 7.3.3 DCP Auto-Detect
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shorted Mode
      2. 7.4.2 Divider Mode
      3. 7.4.3 1.2 V Mode
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 USB Power Switch
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings(1)

Over recommended junction temperature range, voltages are referenced to GND (unless otherwise noted)
MIN MAX UNIT
Voltage range IN –0.3 7 V
DP1, DP2 output voltage, DM1, DM2 output voltage –0.3 5.8
DP1, DP2 input voltage, DM1, DM2 input voltage –0.3 5.8
Continuous output sink current DP1, DP2 input current, DM1, DM2 input current 35 mA
Continuous output source current DP1, DP2 output current, DM1, DM2 output current 35 mA
Operating Junction Temperature, TJ –40 125 °C
Storage temperature range, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

Voltages are referenced to GND (unless otherwise noted), positive current are into pins.
MIN MAX UNIT
VIN Input voltage of IN 4.5 5.5 V
V(DP1) DP1 data line input voltage 0 5.5 V
V(DM1) DM1 data line input voltage 0 5.5 V
I(DP1) Continuous sink or source current ±10 mA
I(DM1) Continuous sink or source current ±10 mA
VDP2 DP2 data line input voltage 0 5.5 V
V(DM2) DM2 data line input voltage 0 5.5 V
I(DP2) Continuous sink or source current ±10 mA
I(DM2) Continuous sink or source current ±10 mA
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) DBV (6 PINS) UNITS
RθJA Junction-to-ambient thermal resistance 179.9 °C/W
RθJCtop Junction-to-case (top) thermal resistance 117.5
RθJB Junction-to-board thermal resistance 41.9
ψJT Junction-to-top characterization parameter 17.2
ψJB Junction-to-board characterization parameter 41.5
RθJCbot Junction-to-case (bottom) thermal resistance N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Conditions are –40°C ≤ (TJ = TA) ≤ 125°C, 4.5 V ≤ VIN ≤ 5.5 V. Positive current are into pins. Typical values are at 25°C. All voltages are with respect to GND (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
UNDERVOLTAGE LOCKOUT
VUVLO IN rising UVLO threshold voltage 3.9 4.1 4.3 V
Hysteresis(1) 100 mV
SUPPLY CURRENT
IIN IN supply current 4.5 V ≤ V IN ≤ 5.5 V 155 220 µA
BC 1.2 DCP MODE (SHORT MODE)
R(DPM_SHORT1) DP1 and DM1 shorting resistance VDP1 = 0.8 V, IDM1 = 1 mA 157 200 Ω
R(DCHG_SHORT1) Resistance between DP1/DM1 and GND VDP1 = 0.8 V 350 656 1150 kΩ
V(DPL_TH_DETACH1) Voltage threshold on DP1 under which the device goes back to divider mode 310 330 350 mV
V(DPL_TH_DETACH_HYS1) Hysteresis(1) 50 mV
R(DPM_SHORT2) DP2 and DM2 shorting resistance VDP2 = 0.8V, IDM2 = 1 mA 157 200 Ω
R(DCHG_SHORT2) Resistance between DP2/DM2 and GND VDP2 = 0.8 V 350 656 1150 kΩ
V(DPL_TH_DETACH2) Voltage threshold on DP2 under which the device goes back to divider mode 310 330 350 mV
V(DPL_TH_DETACH_HYS2) Hysteresis(1) 50 mV
DIVIDER MODE
V(DP1_2.7V) DP1 output voltage VIN = 5 V 2.57 2.7 2.84 V
V(DM1_2.7V) DM1 output voltage VIN = 5 V 2.57 2.7 2.84 V
R(DP1_PAD1) DP1 output impedance IDP1 = –5 µA 24 30 36 kΩ
R(DM1_PAD1) DM1 output impedance IDM1 = –5 µA 24 30 36 kΩ
V(DP2_2.7V) DP2 output voltage VIN = 5 V 2.57 2.7 2.84 V
V(DM2_2.7V) DM2 output voltage VIN = 5 V 2.57 2.7 2.84 V
R(DP2_PAD1) DP2 output impedance IDP2 = –5 µA 24 30 36 kΩ
R(DM2_PAD1) DM2 output impedance IDM2 = –5 µA 24 30 36 kΩ
1.2 V / 1.2 V MODE
V(DP1_1.2V) DP1 output voltage VIN = 5 V 1.12 1.2 1.28 V
V(DM1_1.2V) DM1 output voltage VIN = 5 V 1.12 1.2 1.28 V
R(DM1_PAD2) DP1 output impedance IDP1 = –5 µA 80 102 130 kΩ
R(DP1_PAD2) DM1 output impedance IDM1 = –5 µA 80 102 130 kΩ
V(DP2_1.2V) DP2 output voltage VIN = 5 V 1.12 1.2 1.28 V
V(DM2_1.2V) DM2 output voltage VIN = 5 V 1.12 1.2 1.28 V
R(DP2_PAD2) DP2 output impedance IDP2 = –5 µA 80 102 130 kΩ
R(DM2_PAD2) DM2 output impedance IDM2 = –5 µA 80 102 130 kΩ
(1) Parameters provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's product warranty

6.6 Typical Characteristics

C005_SLVSCC8.png
VIN = 5 V
Figure 1. DP1 and DM1 Output Voltage vs Temperature
C007_SLVSCC8.png
VIN = 5 V
Figure 3. Supply Current vs Temperature
C006_SLVSCC8.png
VIN = 5 V
Figure 2. DP2 and DM2 Output Voltage vs Temperature