SLVSCU5 March   2015 TPS25200-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Enable
      2. 9.3.2 Thermal Sense
      3. 9.3.3 Overcurrent Protection
      4. 9.3.4 FAULT Response
      5. 9.3.5 Output Discharge
    4. 9.4 Device Functional Modes
      1. 9.4.1 Undervoltage Lockout (UVLO)
      2. 9.4.2 Overcurrent Protection (OCP)
      3. 9.4.3 Overvoltage Clamp (OVC)
      4. 9.4.4 Overvoltage Lockout (OVLO)
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Overvoltage and Overcurrent Protector
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Step by Step Design Produce
          2. 10.2.1.2.2 Input and Output Capacitance
          3. 10.2.1.2.3 Programming the Current-Limit Threshold
          4. 10.2.1.2.4 Design Above a Minimum Current Limit
          5. 10.2.1.2.5 Design Below a Maximum Current Limit
          6. 10.2.1.2.6 Power Dissipation and Junction Temperature
        3. 10.2.1.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range, voltage are referenced to GND (unless otherwise noted)(1)
MIN MAX UNIT
Voltage IN –0.3 20 V
OUT, EN, ILIM, FAULT –0.3 7 V
From IN to OUT –7 20 V
Continuous output current, IO Thermally Limited
Continuous FAULT output sink current 25 mA
Continuous ILIM output source current 150 µA
Operating junction temperature, TJ Internally limited
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) ±2000 V
Charged device model (CDM), per AEC Q100-011 ±750
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage of IN 2.5 6.5 V
VEN Enable pin voltage 0 6.5 V
IFAULT Continuous FAULT sink current 0 10 mA
IOUT Continuous output current of OUT 2.4 A
RILIM Current-limit set resistors 36 1100 kΩ
TJ Operating junction temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) DRV (WSON) UNIT
6 PINS
RθJA Junction-to-ambient thermal resistance 66.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 83.4
RθJB Junction-to-board thermal resistance 36.1
ψJT Junction-to-top characterization parameter 1.6
ψJB Junction-to-board characterization parameter 36.5
RθJC(bot) Junction-to-case (bottom) thermal resistance 7.6
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Conditions are –40°C ≤ TJ ≤ 125°C and 2.5 V ≤ VIN ≤ 6.5 V. VEN = VIN, RILIM = 36 kΩ. Positive current into pins. Typical value is at 25°C. All voltages are with respect to ground (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH
rDS(on) IN–OUT resistance(1) 2.5 V ≤ VIN ≤ 5 V,
IOUT = 2.4 A		 TJ = 25°C 67 75 mΩ
–40°C ≤ TJ ≤ 85°C 67 95
–40°C ≤ TJ ≤ 125°C 67 105
ENABLE INPUT EN
EN pin turn on threshold Input rising 1.9 V
EN pin turn off threshold Input falling 0.6 V
Hysteresis 330(2) mV
IEN Leakage current VEN = 0 V or 5.5 V –2 2 µA
DISCHARGE
RDCHG OUT Discharge Resistance VOUT = 5 V, VEN = 0 V 500 625 Ω
CURRENT LIMIT
IOS Current-limit, see Figure 12 RILIM = 36 kΩ 2530 2700 2870 mA
RILIM = 42.2 kΩ 2140 2300 2460
RILIM = 56 kΩ 1620 1740 1860
RILIM = 80.6 kΩ 1110 1206 1300
RILIM = 150 kΩ 590 647 710
RILIM = 1100 kΩ 40 83 130
OVERVOLTAGE LOCKOUT, IN
V(OVLO) IN rising OVLO threshold voltage IN rising 6.8 7.6 8.45 V
Hysteresis 70(2) mV
VOLTAGE CLAMP, OUT
V(OVC) OUT clamp voltage threshold CL = 1 µF, RL = 100 Ω, VIN = 6.5 V 5.25 5.4 5.55 V
SUPPLY CURRENT
IIN(off) Supply current, low-level output VEN = 0 V, VIN = 5 V 1 5 µA
VEN = 0 or 5 V, VIN = 20 V 1040 1700
IIN(on) Supply current, high-level output VIN = 5 V,
No load on OUT		 RILIM = 36 kΩ 147 200 µA
RILIM = 150 kΩ 120 190
IREV Reverse leakage current VOUT = 6.5V, VIN = VEN = 0 V, TJ = 25°C, Measure IOUT 3.2 5 µA
UNDERVOLTAGE LOCKOUT, IN
VUVLO IN rising UVLO threshold voltage IN rising 2.35 2.45 V
Hysteresis 30(2) mV
FAULT FLAG
VOL Output low voltage, FAULT IFAULT = 1 mA 50 180 mV
Off-state leakage VFAULT = 6.5 V 1 µA
THERMAL SHUTDOWN
Thermal shutdown threshold, OTSD2(3) 155 °C
Thermal shutdown threshold only in current-limit, OTSD1(3) 135
Hysteresis 20(2)
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature. Thermal effects must be taken into account separately.
(2) These parameters are provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.
(3) For more information on the thermal sensors, OTSD1 and OTSD2, see the Thermal Sense section.

7.6 Switching Characteristics

Conditions are –40°C ≤ TJ ≤ 125°C and 2.5 V ≤ VIN ≤ 6.5 V. VEN = VIN, RILIM = 36 kΩ. Positive current are into pins. Typical value is at 25°C. All voltages are with respect to GND (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SWITCH
tr OUT voltage rise time CL = 1 µF, RL = 100 Ω, (see Figure 10) 2.05 3.2 ms
tf OUT voltage fall time CL = 1 µF, RL = 100 Ω, (see Figure 10) 0.18 0.2
ENABLE INPUT EN
ton Turn-on time 2.5 V ≤ VIN ≤ 5 V, CL = 1 µF, RL = 100 Ω, (see Figure 10) 5.12 7.3 ms
toff Turn-off time 2.5 V ≤ VIN ≤ 5 V, CL = 1 µF, RL = 100 Ω, (see Figure 10) 0.22 0.3 ms
CURRENT LIMIT
t(IOS) Short-circuit response time VIN = 5 V (see Figure 12) 3.5(1) µs
OVERVOLTAGE LOCKOUT, IN
t(OVLO_off_delay) Turn-off Delay for OVLO VIN = 5 V to 10 V with 1 V/µs ramp-up rate, VOUT with 100-Ω load 0.6(1) µs
FAULT FLAG
FAULT deglitch FAULT assertion or deassertion because of overcurrent condition 5 8 12 ms
(1) This parameter is provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.

7.7 Typical Characteristics

TPS25200-Q1 D001_slvscu5.gif
RILIM = 36 KΩ
Figure 1. IIN(on) vs Junction Temperature
TPS25200-Q1 D002_slvscu5.gif
RILIM = 36 KΩ
Figure 2. IIN(off) vs Junction Temperature
TPS25200-Q1 D003_slvscu5.gif
VEN = VIN = 0 V VOUT = 6.5 V
Figure 3. IREV vs Junction Temperature
TPS25200-Q1 D005_slvscu5.gif
Figure 5. V(OVLO) vs Junction Temperature
TPS25200-Q1 D007_slvscu5.gif
Figure 7. IOS vs Junction Temperature
TPS25200-Q1 D004_slvscu5.gif
Figure 4. rDS(ON) vs Junction Temperature
TPS25200-Q1 D006_slvscu5.gif
CL = 1 µF RL = 100 Ω VIN = 6.5 V
Figure 6. VO(VC) vs Junction Temperature
TPS25200-Q1 D008_slvscu5.gif
Figure 8. Discharge Resistance vs VIN