SLVSHR9 December   2024 TPS25984B

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Logic Interface
    7. 6.7 Timing Requirements
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Undervoltage Protection
      2. 7.3.2  Insertion Delay
      3. 7.3.3  Overvoltage Protection
      4. 7.3.4  Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 7.3.4.1 Slew Rate (dVdt) and Inrush Current Control
          1. 7.3.4.1.1 Start-Up Time Out
        2. 7.3.4.2 Steady-State Overcurrent Protection (Circuit-Breaker)
        3. 7.3.4.3 Active Current Limiting During Start-Up
        4. 7.3.4.4 Short-Circuit Protection
      5. 7.3.5  Analog Load Current Monitor (IMON)
      6. 7.3.6  Mode Selection (MODE)
      7. 7.3.7  Digital Overcurrent Indication (D_OC)
      8. 7.3.8  Stacking Multiple eFuses for Scalability
        1. 7.3.8.1 Current Balancing During Start-Up
      9. 7.3.9  Analog Junction Temperature Monitor (TEMP)
      10. 7.3.10 Overtemperature Protection
      11. 7.3.11 Fault Response and Indication (GOK/FLT)
      12. 7.3.12 Power-Good Indication (PG)
      13. 7.3.13 Output Discharge
      14. 7.3.14 FET Health Monitoring
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Single Device, Standalone Operation
      2. 8.1.2 Multiple Devices, Parallel Connection
      3. 8.1.3 Digital Telemetry Using External Microcontroller
    2. 8.2 Typical Application: 12V, 3.3kW Power Path Protection in Data Center Servers
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
      4. 8.2.4 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Transient Protection
      2. 8.3.2 Output Short-Circuit Measurements
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Stacking Multiple eFuses for Scalability

For systems needing higher current than supported by a single TPS25984Bx, multiple TPS25984Bx devices can be connected in parallel to deliver the total system current.

This configuration is achieved by connecting all the devices as follows:

  1. DVDT is connected through capacitor to GND.

  2. IREF is connected through resistor to GND.

  3. IMON is connected through resistor to GND.

  4. ILIM is connected through resistor to GND.

The following pins of all devices must be connected together:

  1. IN

  2. OUT

  3. EN/UVLO

  4. DVDT

  5. D_OC

  6. IMON

  7. IREF

  8. GOK/FLT

  9. TEMP