SLVSHR9 December   2024 TPS25984B

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Logic Interface
    7. 6.7 Timing Requirements
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Undervoltage Protection
      2. 7.3.2  Insertion Delay
      3. 7.3.3  Overvoltage Protection
      4. 7.3.4  Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 7.3.4.1 Slew Rate (dVdt) and Inrush Current Control
          1. 7.3.4.1.1 Start-Up Time Out
        2. 7.3.4.2 Steady-State Overcurrent Protection (Circuit-Breaker)
        3. 7.3.4.3 Active Current Limiting During Start-Up
        4. 7.3.4.4 Short-Circuit Protection
      5. 7.3.5  Analog Load Current Monitor (IMON)
      6. 7.3.6  Mode Selection (MODE)
      7. 7.3.7  Digital Overcurrent Indication (D_OC)
      8. 7.3.8  Stacking Multiple eFuses for Scalability
        1. 7.3.8.1 Current Balancing During Start-Up
      9. 7.3.9  Analog Junction Temperature Monitor (TEMP)
      10. 7.3.10 Overtemperature Protection
      11. 7.3.11 Fault Response and Indication (GOK/FLT)
      12. 7.3.12 Power-Good Indication (PG)
      13. 7.3.13 Output Discharge
      14. 7.3.14 FET Health Monitoring
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Single Device, Standalone Operation
      2. 8.1.2 Multiple Devices, Parallel Connection
      3. 8.1.3 Digital Telemetry Using External Microcontroller
    2. 8.2 Typical Application: 12V, 3.3kW Power Path Protection in Data Center Servers
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
      4. 8.2.4 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Transient Protection
      2. 8.3.2 Output Short-Circuit Measurements
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Switching Characteristics

The output rising slew rate is internally controlled and constant across the entire operating voltage range to ensure the turn on timing is not affected by the load conditions. The rising slew rate can be adjusted by adding capacitance from the dVdt pin to ground. As CdVdt is increased it will slow the rising slew rate (SR). See Slew Rate and Inrush Current Control (dVdt) section for more details. The Turn-Off Delay and Fall Time, however, are dependent on the RC time constant of the load capacitance (COUT) and Load Resistance (RL). The Switching Characteristics are only valid for the power-up sequence where the supply is available in steady state condition and the load voltage is completely discharged before the device is enabled. Typical values are taken at TJ = 25°C unless specifically noted otherwise. VIN = 12V, ROUT = 500Ω, COUT = 1mF  
PARAMETER CdVdt = 3.3 nF CdVdt = 33 nF UNITS
SRON Output rising slew rate B0/1/3 variant 13.54 1.65 V/ms
SRON Output rising slew rate B2 variant 12.35 4.15 V/ms
tD,ON Turn on delay B0/1/3 variant 0.37 1.71 ms
tD,ON Turn on delay B2 variant 0.375 0.713 ms
tR Rise time B0/1/3 variant 0.71 5.83 ms
tR Rise time B2 variant 0.72 2.313 ms
tON Turn on time B0/1/3 variant 1.078 7.541 ms
tON Turn on time B2 variant 1.096 3.026 ms
tD,OFF Turn off delay 1.124 1.124 µs
tF Fall time Depends on ROUT and COUT µs