JAJSF90F October   2017  – December 2021 TPS2662

PRODUCTION DATA  

  1. 特長
  2. アプリケーション
  3. 概要
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Undervoltage Lockout (UVLO)
      2. 9.3.2 Overvoltage Protection (OVP)
      3. 9.3.3 Hot Plug-In and Inrush Current Control
      4. 9.3.4 Reverse Polarity Protection
        1. 9.3.4.1 Input Side Reverse Polarity Protection
        2. 9.3.4.2 Output Side Reverse Polarity Protection
      5. 9.3.5 Overload and Short-Circuit Protection
        1. 9.3.5.1 Overload Protection
        2.       28
        3. 9.3.5.2 Short-Circuit Protection
          1. 9.3.5.2.1 Start-Up With Short-Circuit On Output
      6. 9.3.6 Reverse Current Protection
      7. 9.3.7 FAULT Response
      8. 9.3.8 IN, OUT, RTN, and GND Pins
      9. 9.3.9 Thermal Shutdown
    4. 9.4 Device Functional Modes
      1. 9.4.1 Low Current Shutdown Control (SHDN)
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Step-by-Step Design Procedure
        2. 10.2.2.2 Programming the Current Limit Threshold R(ILIM) Selection
        3. 10.2.2.3 Undervoltage Lockout and Overvoltage Set Point
        4. 10.2.2.4 Setting Output Voltage Ramp Time—(tdVdT)
          1. 10.2.2.4.1 Case 1: Start-Up Without Load—Only Output Capacitance C(OUT) Draws Current During Start-Up
          2. 10.2.2.4.2 Case 2: Start-Up With Load —Output Capacitance C(OUT) and Load Draws Current During Start-Up
          3. 10.2.2.4.3 Support Component Selections – R FLT and C(IN)
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 Field Supply Protection in PLC, DCS I/O Modules
      2. 10.3.2 Simple 24-V Power Supply Path Protection
      3. 10.3.3 Power Stealing in Smart Thermostat
    4. 10.4 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Transient Protection
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 サポート・リソース
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Overload Protection

Connect a resistor across ILIM to RTN to program the over load current limit I(OL). During overload conditions, the device regulates the current through it at I(OL) programmed by the R(ILIM) resistor as shown in Equation 3 for a maximum duration of tCL(dly).

Equation 3. GUID-F22BBE5F-30B0-416B-9C71-129968E436A1-low.gif

where

  • I(OL) is the overload current limit in Ampere
  • R(ILIM) is the current limit resistor in kΩ

During the current limit operation the output voltage droops and this can cause the device to hit the thermal shutdown threshold T(TSD) before tCL(dly) time. After the thermal shutdown threshold is hit or tCL(dly) is elapsed, the internal FETs of TPS2662x turns OFF. FETs in TPS26620, TPS26622 and TPS26624 remain OFF and latched. To reset the latch, cycle the SHDN or UVLO, or recycle the VIN. TPS26621, TPS26623 and TPS26625 commence an auto-retry cycle after a retry time of 512 msec. The internal FETs turn back on in dVdT mode after this retry time. If the overload still exists, then the device regulates the current at programmed current limit, I(OL). tCL(dly) is the maximum duration for current limiting and estimated as tCL(dly) = 512 ms + [3.3 × CdVdT / 2 μA] (CdVdT in nF).