JAJS116J December 2003 – June 2022 TPS40054 , TPS40055 , TPS40057
PRODUCTION DATA
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The power dissipated in the external high-side MOSFET is comprised of conduction and switching losses. The conduction losses are a function of the IRMS current through the MOSFET and the RDS(on) of the MOSFET. The high-side MOSFET conduction losses are defined by Equation 33.
where
The TCR varies depending on MOSFET technology and manufacturer, but typically ranges between 3500 ppm/°C and 7000 ppm/°C.
The IRMS current for the high-side MOSFET is described in Equation 34.
The switching losses for the high-side MOSFET are described in Equation 35.
where
Typical switching waveforms are shown in Figure 8-1.
The maximum allowable power dissipation in the MOSFET is determined by Equation 36.
where