JAJS116J December   2003  – June 2022 TPS40054 , TPS40055 , TPS40057

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Recommended Operating Conditions
    3. 6.3 Thermal Information
    4. 6.4 Electrical Characteristics
    5. 6.5 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Setting the Switching Frequency (Programming the Clock Oscillator)
      2. 7.3.2 Programming The Ramp Generator Circuit
      3. 7.3.3 UVLO Operation
      4. 7.3.4 BP5 and BP10 Internal Voltage Regulators
      5. 7.3.5 Programming Soft Start
      6. 7.3.6 Programming Current Limit
      7. 7.3.7 Synchronizing to an External Supply
      8. 7.3.8 Loop Compensation
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Selecting the Inductor Value
      2. 8.1.2 Calculating the Output Capacitance
      3. 8.1.3 Calculating the Boost and BP10 Bypass Capacitor
      4. 8.1.4 DV-DT Induced Turn-On
      5. 8.1.5 High-Side MOSFET Power Dissipation
      6. 8.1.6 Synchronous Rectifier MOSFET Power Dissipation
      7. 8.1.7 TPS4005x Power Dissipation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Calculate Maximum and Minimum Duty Cycles
        2. 8.2.2.2  Select Switching Frequency
        3. 8.2.2.3  Select ΔI
        4. 8.2.2.4  Calculate the High-Side MOSFET Power Losses
        5. 8.2.2.5  Calculate Synchronous Rectifier Losses
        6. 8.2.2.6  Calculate the Inductor Value
        7. 8.2.2.7  Set the Switching Frequency
        8. 8.2.2.8  Program the Ramp Generator Circuit
        9. 8.2.2.9  Calculate the Output Capacitance (CO)
        10. 8.2.2.10 Calculate the Soft-Start Capacitor (CSS/SD)
        11. 8.2.2.11 Calculate the Current Limit Resistor (RILIM)
        12. 8.2.2.12 Calculate Loop Compensation Values
        13. 8.2.2.13 Calculate the Boost and BP10V Bypass Capacitance
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 MOSFET Packaging
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 サポート・リソース
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • PWP|16
サーマルパッド・メカニカル・データ
発注情報

8.1.4 DV-DT Induced Turn-On

MOSFETs are susceptible to dv/dt turn-on particularly in high-voltage (VDS) applications. The turn-on is caused by the capacitor divider that is formed by CGD and CGS. High dv/dt conditions and drain-to-source voltage on the MOSFET causes current flow through CGD and causes the gate-to-source voltage to rise. If the gate-to-source voltage rises above the MOSFET threshold voltage, the MOSFET turns on, resulting in large shoot-through currents. Therefore, the SR MOSFET should be chosen so that the QGD charge is smaller than the QGS charge.