SLUSC89 November   2015 TPS40210-EP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Soft-Start
      2. 7.3.2  BP Regulator
      3. 7.3.3  Shutdown (DIS/EN Pin)
      4. 7.3.4  Minimum On-Time and Off-Time Considerations
      5. 7.3.5  Setting the Oscillator Frequency
      6. 7.3.6  Synchronizing the Oscillator
      7. 7.3.7  Current Sense and Overcurrent
      8. 7.3.8  Current Sense and Subharmonic Instability
      9. 7.3.9  Current Sense Filtering
      10. 7.3.10 Control Loop Considerations
      11. 7.3.11 Gate Drive Circuit
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation Near Minimum Input Voltage
      2. 7.4.2 Operation With DIS/EN Pin
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Duty Cycle Estimation
        2. 8.2.2.2  Inductor Selection
        3. 8.2.2.3  Rectifier Diode Selection
        4. 8.2.2.4  Output Capacitor Selection
        5. 8.2.2.5  Input Capacitor Selection
        6. 8.2.2.6  Current Sense and Current Limit
        7. 8.2.2.7  Current Sense Filter
        8. 8.2.2.8  Switching MOSFET Selection
        9. 8.2.2.9  Feedback Divider Resistors
        10. 8.2.2.10 Error Amplifier Compensation
        11. 8.2.2.11 RC Oscillator
        12. 8.2.2.12 Soft-Start Capacitor
        13. 8.2.2.13 Regulator Bypass
        14. 8.2.2.14 Bill of Materials
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Related Devices
    2. 11.2 Documentation Support
      1. 11.2.1 References
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range unless otherwise noted(1)
MIN MAX UNIT
Input voltage VDD –0.3 52 V
RC, SS, FB, DIS/EN –0.3 10
ISNS –0.3 8
Output voltage COMP, BP, GDRV –0.3 9
TJ Operating junction temperature –55 150 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VDD Input voltage 4.5 52 V
TJ Operating junction temperature –55 125 °C

6.4 Thermal Information

THERMAL METRIC(1) TPS40210-EP UNIT
DRC (VSON)
10 PINS
RθJA Junction-to-ambient thermal resistance 67.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 50.5 °C/W
RθJB Junction-to-board thermal resistance 41.0 °C/W
ψJT Junction-to-top characterization parameter 2.4 °C/W
ψJB Junction-to-board characterization parameter 40.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 15.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

TJ = –55°C to 125°C, VDD= 12Vdc, all parameters at zero power dissipation (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOLTAGE REFERENCE
VFB Feedback voltage range COMP = FB, 4.5 ≤ VDD ≤ 52 V, TJ = 25°C 693 700 707 mV
COMP = FB, 4.5 ≤ VDD ≤ 52 V, –55°C ≤ TJ ≤ 125°C 686 700 714
INPUT SUPPLY
VDD Input voltage range 4.5 52 V
IDD Operating current 4.5 ≤ VDD ≤ 52 V, no switching, VDIS < 0.8 1.5 2.5 mA
2.5 ≤ VDIS ≤ 7 V 10 20 μA
VDD < VUVLO(on), VDIS < 0.8 530 μA
UNDERVOLTAGE LOCKOUT
VUVLO(on) Turn on threshold voltage 4.00 4.25 4.50 V
VUVLO(hyst) UVLO hysteresis 140 195 240 mV
OSCILLATOR
ƒOSC Oscillator frequency range(1) 35 1000 kHz
Oscillator frequency RRC = 182 kΩ, CRC = 330 pF 260 300 340
Frequency line regulation 4.5 ≤ VDD ≤ 52 V -20% 7%
VSLP Slope compensation ramp 520 620 720 mV
PWM
tON(min) Minimum pulse width VDD = 12 V(1) 275 400 ns
VDD = 30 V 90 200
tOFF(min) Minimum off time 170 200
VVLY Valley voltage 1.2 V
SOFT-START
VSS(ofst) Offset voltage from SS pin to error amplifier input 700 mV
RSS(chg) Soft-start charge resistance 320 430 620 kΩ
RSS(dchg) Soft-start discharge resistance 840 1200 1600
ERROR AMPLIFIER
GBWP Unity gain bandwidth product(1) 1.5 3.0 MHz
AOL Open loop gain(1) 60 80 dB
IIB(FB) Input bias current (current out of FB pin) 100 300 nA
ICOMP(src) Output source current VFB = 0.6 V, VCOMP = 1 V 100 250 μA
ICOMP(snk) Output sink current VFB = 1.2 V, VCOMP = 1 V 1.2 2.5 mA
OVERCURRENT PROTECTION
VISNS(oc) Overcurrent detection threshold (at ISNS pin) 4.5 ≤ VDD < 52 V, –55°C ≤ TJ ≤ 125°C 120 150 180 mV
DOC Overcurrent duty cycle(1) 2%
VSS(rst) Overcurrent reset threshold voltage (at SS pin) 100 150 350 mV
TBLNK Leading edge blanking(1) 75 ns
CURRENT SENSE AMPLIFIER
ACS Current sense amplifier gain 4..2 5.6 7.4 V/V
IB(ISNS) Input bias current 1 3 μA
DRIVER
IGDRV(src) Gate driver source current VGDRV = 4 V, TJ = 25°C 375 400 mA
IGDRV(snk) Gate driver sink current VGDRV = 4 V, TJ = 25°C 330 400
LINEAR REGULATOR
VBP Bypass voltage output 0 mA < IBP < 15 mA 7 8 9 V
DISABLE/ENABLE
VDIS(en) Turn-on voltage 0.7 1.3 V
VDIS(hys) Hysteresis voltage 25 130 220 mV
RDIS DIS pin pulldown resistance 0.7 1.1 1.6 MΩ
(1) Ensured by design. Not production tested.

6.6 Typical Characteristics

TPS40210-EP fosc_v_rt_lus772.gif Figure 1. Frequency vs Timing Resistance
TPS40210-EP D004_SLUSC89.gif
Figure 3. Quiescent Current vs Junction Temperature
TPS40210-EP D006_SLUSC89.gif
Figure 5. Reference Voltage Change vs Junction Temperature
TPS40210-EP vuvlo_v_tj_lus772.gif Figure 7. Undervoltage Lockout Threshold vs Junction Temperature
TPS40210-EP visnsoc_v_vvdd_lus772.gif Figure 9. Overcurrent Threshold vs Input Voltage
TPS40210-EP C012_SLUSC89.png
Figure 11. Oscillator Amplitude vs Junction Temperature
TPS40210-EP D014_SLUSC89.gif
Figure 13. Fb Bias Current vs Junction Temperature
TPS40210-EP D016_SLUSC89.gif
Figure 15. Compensation Sink Current vs Junction Temperature
TPS40210-EP D018_SLUSC89.gif
Figure 17. Regulator Voltage vs Junction Temperature
TPS40210-EP D020_SLUSC89.gif
Figure 19. Current Sense Amplifier Gain vs Junction Temperature
TPS40210-EP fsw_vs_d_lus772.gif Figure 2. Switching Frequency vs Duty Cycle
TPS40210-EP D005_SLUSC89.gif
Figure 4. Shutdown Current vs Junction Temperature
TPS40210-EP vfb_v_vvdd_lus772.gif Figure 6. Reference Voltage Change vs Input Voltage
TPS40210-EP C009_SLUSC89.png
Figure 8. Overcurrent Threshold vs Junction Temperature
TPS40210-EP D011_SLUSC89.gif
Figure 10. Switching Frequency Change vs Junction Temperature
TPS40210-EP D013_SLUSC89.gif
Figure 12. Soft-Start Charge/Discharge Resistance vs Junction Temperature
TPS40210-EP D015_SLUSC89.gif
Figure 14. Compensation Source Current vs Junction Temperature
TPS40210-EP D017_SLUSC89.gif
Figure 16. Valley Voltage Change vs Junction Temperature
TPS40210-EP D019_SLUSC89.gif
Figure 18. DIS/EN Turn-On Threshold vs Junction Temperature