JAJS123J May   2004  – January 2018 TPS51116

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーション
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Dissipation Ratings
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  VDDQ SMPS, Light Load Condition
      2. 7.3.2  Low-Side Driver
      3. 7.3.3  High-Side Driver
      4. 7.3.4  Current Sensing Scheme
      5. 7.3.5  PWM Frequency and Adaptive On-Time Control
      6. 7.3.6  VDDQ Output Voltage Selection
      7. 7.3.7  VTT Linear Regulator and VTTREF
      8. 7.3.8  Controling Outputs Using the S3 and S5 Pins
      9. 7.3.9  Soft-Start Function and Powergood Status
      10. 7.3.10 VDDQ and VTT Discharge Control
      11. 7.3.11 Current Protection for VDDQ
      12. 7.3.12 Current Protection for VTT
      13. 7.3.13 Overvoltage and Undervoltage Protection for VDDQ
      14. 7.3.14 Undervoltage Lockout (UVLO) Protection, V5IN (PWP), V5FILT (RGE)
      15. 7.3.15 Input Capacitor, V5IN (PWP), V5FILT (RGE)
      16. 7.3.16 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 VDDQ SMPS, Dual PWM Operation Modes
      2. 7.4.2 Current Mode Operation
      3. 7.4.3 D-CAP™ Mode Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 DDR3 Application With Current Mode
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Pin Connections
        2. 8.2.2.2 Choose the inductor
        3. 8.2.2.3 Choose rectifying (low-side) MOSFET
        4. 8.2.2.4 Choose output capacitance
        5. 8.2.2.5 Determine f0 and calculate RC
        6. 8.2.2.6 Calculate CC2
        7. 8.2.2.7 Calculate CC.
        8. 8.2.2.8 Determine the value of R1 and R2.
      3. 8.2.3 Application Curves
    3. 8.3 DDR3 Application With D−CAP™ Mode
      1. 8.3.1 Design Requirements
      2. 8.3.2 Detailed Design Procedure
        1. 8.3.2.1 Pin Connections
        2. 8.3.2.2 Choose the Components
      3. 8.3.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントの更新通知を受け取る方法
    2. 11.2 コミュニティ・リソース
    3. 11.3 商標
    4. 11.4 静電気放電に関する注意事項
    5. 11.5 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • RGE|24
  • PWP|20
サーマルパッド・メカニカル・データ
発注情報

8.3.2.2 Choose the Components

Refer to the instructions in the current mode design example to choose inductor, MOSFETs. Organic semiconductor capacitor or polymer capacitor are recommended for D−CAP™ mode design. The output ripple should be larger than (VOUT/0.75) x 15 (mV). In this design, two pieces of 150 μF PSCAP capacitors with 45 mΩ ESR are selected.