JAJSCB6B May 2016 – April 2021 TPS54302
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INPUT SUPPLY | ||||||
VIN | Input voltage range | 4.5 | 28 | V | ||
IQ | Non switching quiescent current | EN = 5 V, VFB = 1 V | 45 | µA | ||
IOFF | Shut down current | EN = GND | 2 | µA | ||
VIN(UVLO) | VIN under voltage lockout | Rising VIN | 3.8 | 4.1 | 4.4 | V |
Falling VIN | 3.3 | 3.6 | 3.9 | V | ||
Hysteresis | 400 | 480 | 560 | mV | ||
ENABLE (EN PIN) | ||||||
VENrising | Enable threshold | Rising | 1.21 | 1.28 | V | |
VENfalling | Falling | 1.1 | 1.19 | V | ||
I(EN_INPUT) | Input current | VEN = 1 V | 0.7 | μA | ||
I(EN_HYS) | Hysteresis current | VEN = 1.5 V | 1.55 | μA | ||
FEEDBACK AND ERROR AMPLIFIER | ||||||
VFB | Feedback Voltage | VIN = 12 V | 0.581 | 0.596 | 0.611 | V |
PULSE SKIP MODE | ||||||
I(SKIP)(1) | Pulse skip mode peak inductor current threshold | VIN = 12 V, VOUT = 5 V, L = 10 µH | 500 | mA | ||
POWER STAGE | ||||||
R(HSD) | High-side FET on resistance | TA = 25°C, VBST – SW = 6 V | 85 | mΩ | ||
R(LSD) | Low-side FET on resistance | TA = 25°C, VIN = 12 | 40 | mΩ | ||
CURRENT LIMIT | ||||||
I(LIM_HS) | High-side current limit | Maximum inductor peak current | 4 | 5 | 5.9 | A |
I(LIM_LS) | Low-side source current limit | Maximum inductor valley current | 3.1 | 4 | 5.5 | A |
OSCILLATOR | ||||||
fSW | Centre switching frequency | 290 | 400 | 510 | kHz | |
OVERTEMPERATURE PROTECTION | ||||||
Thermal Shutdown(1) | Rising temperature | 165 | °C | |||
Hysteresis | 10 | °C | ||||
Hiccup time | 32768 | Cycles |