SLVSC56B September 2013 – November 2015 TPS54540-Q1
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | VIN | –0.3 | 65 | V |
EN | –0.3 | 8.4 | ||
FB | –0.3 | 3 | ||
COMP | –0.3 | 3 | ||
RT/CLK | –0.3 | 3.6 | ||
BOOT-SW | –0.3 | 8 | ||
SW | –0.6 | 65 | ||
SW, 10-ns Transient | –2 | 65 | ||
Operating junction temperature | –40 | 150 | °C | |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±750 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Input supply voltage | 4.5 | 60 | V | |
VO | Output voltage | 0.8 | 58.8 | V | |
IO | Output current | 0 | 5 | A | |
TJ | Junction Temperature | –40 | 150 | °C |
THERMAL METRIC(1) | TPS54540-Q1 | UNIT | |
---|---|---|---|
DDA (HSOP) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 41.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 52.7 | °C/W |
RθJB | Junction-to-board thermal resistance | 22.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 7.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 22.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY VOLTAGE (VIN PIN) | |||||||
Operating input voltage | 4.5 | 42 | V | ||||
Internal undervoltage lockout threshold | Rising | 4.1 | 4.3 | 4.48 | V | ||
Internal undervoltage lockout threshold hysteresis | 325 | mV | |||||
Shutdown supply current | EN = 0 V, 25°C, 4.5 V ≤ VIN ≤ 42 V | 2.25 | 4.5 | μA | |||
Operating: nonswitching supply current | FB = 0.9 V, TA = 25°C | 146 | 175 | ||||
ENABLE AND UVLO (EN PIN) | |||||||
Enable threshold voltage | No voltage hysteresis, rising and falling | 1.1 | 1.2 | 1.3 | V | ||
Input current | Enable threshold 50 mV | –4.6 | μA | ||||
Enable threshold –50 mV | –0.58 | –1.2 | –1.8 | ||||
Hysteresis current | –2.2 | –3.4 | –4.5 | μA | |||
INTERNAL SOFT-START TIME | |||||||
Soft-start time | fSW = 500 kHz, 10% to 90% | 2.1 | ms | ||||
Soft-start time | fSW = 2.5 MHz, 10% to 90% | 0.42 | ms | ||||
VOLTAGE REFERENCE | |||||||
Voltage reference | 0.792 | 0.8 | 0.808 | V | |||
HIGH-SIDE MOSFET | |||||||
On-resistance | VIN = 12 V, BOOT-SW = 6 V | 92 | 190 | mΩ | |||
ERROR AMPLIFIER | |||||||
Input current | 50 | nA | |||||
Error amplifier transconductance (gM) | –2 μA < ICOMP < 2 μA, VCOMP = 1 V | 350 | μS | ||||
Error amplifier transconductance (gM) during soft-start | –2 μA < ICOMP < 2 μA, VCOMP = 1 V, VFB = 0.4 V | 77 | μS | ||||
Error amplifier DC gain | VFB = 0.8 V | 10000 | V/V | ||||
Minimum unity gain bandwidth | 2500 | kHz | |||||
Error amplifier source and sink | V(COMP) = 1 V, 100-mV overdrive | ±30 | μA | ||||
COMP to SW current transconductance | 17 | A/V | |||||
CURRENT LIMIT | |||||||
Current limit threshold | All VIN and temperatures, Open Loop(1) | 6.3 | 7.5 | 8.8 | A | ||
All temperatures, VIN = 12 V, Open Loop(1) | 6.3 | 7.5 | 8.3 | ||||
VIN = 12 V, TA = 25°C, Open Loop(1) | 7.1 | 7.5 | 7.9 | ||||
THERMAL SHUTDOWN | |||||||
Thermal shutdown | 176 | °C | |||||
Thermal shutdown hysteresis | 12 | °C | |||||
ERROR AMPLIFIER | |||||||
Enable to COMP active | VIN = 12 V, TA = 25°C | 540 | µs |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
RT/CLK | |||||
Minimum CLK input pulse width | 15 | ns |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
CURRENT LIMIT | ||||||
Current limit threshold delay | 60 | ns | ||||
RT/CLK | ||||||
Switching frequency range using RT mode | 100 | 2500 | kHz | |||
fSW | Switching frequency | RT = 200 kΩ | 450 | 500 | 550 | kHz |
Switching frequency range using CLK mode | 160 | 2300 | kHz | |||
RT/CLK high threshold | 1.55 | 2 | V | |||
RT/CLK low threshold | 0.5 | 1.2 | V | |||
RT/CLK falling edge to SW rising edge delay | Measured at 500 kHz with RT resistor in series | 55 | ns | |||
PLL lock in time | Measured at 500 kHz | 78 | μs |