JAJSP25 データシート

JAJSP25 November 2023 TPS546A24S

PRODUCTION DATA

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5.6 Typical Characteristics

V_PIN = V_AVIN = 12 V, T_A = 25°C, f_sw = 650 kHz (unless otherwise specified). Safe operating area curves were measured using a Texas Instruments evaluation module (EVM).

V_IN = 12 V	V_OUT = 1 V	Snubber = 1 nF + 1Ω
f_SW = 650 kHz	L = 600 nH	R_BOOT = 0 Ω

Figure 5-1 TPS546A24S Safe Operating Area

V_IN = 5 V	L = 680 nH	Snubber = 1 nF + 1 Ω
f_SW = 1100 kHz	R_DCR = 1.4 mΩ	R_BOOT = 0 Ω

Figure 5-3 TPS546A24S Efficiency vs Output Current

V_IN = 12 V	L = 680 nH	Snubber = 1 nF + 1 Ω
f_SW = 1100 kHz	R_DCR = 1.4 mΩ	R_BOOT = 0 Ω

Figure 5-5 TPS546A24S Efficiency vs Output Current

Figure 5-7 High-Side MOSFET On-Resistance (R_DS(on)) vs Junction Temperature

Figure 5-9 Switching Frequency vs Junction Temperature

I_VDD5 = 10 mA

V_PVIN = V_AVIN = 12 V

Figure 5-11 VDD5 Voltage vs Junction Temperature

VIN_ON = 2.75 V

Figure 5-13 Turnon Voltage vs Junction Temperature

Figure 5-15 EN/UVLO Thresholds vs Junction Temperature

V_IN = 5 V	L = 680 nH	Snubber = 1 nF + 1 Ω
f_SW = 650 kHz	R_DCR = 1.4 mΩ	R_BOOT = 0 Ω

Figure 5-2 TPS546A24S Efficiency vs Output Current

V_IN = 12 V	L = 680 nH	Snubber = 1 nF + 1 Ω
f_SW = 650 kHz	R_DCR = 1.4 mΩ	R_BOOT = 0 Ω

Figure 5-4 TPS546A24S Efficiency vs Output Current

Figure 5-6 Low-Side MOSFET On-Resistance (R_DS(on)) vs Junction Temperature

VOUT_COMMAND = 1 V

Figure 5-8 Output Voltage vs Junction Temperature

Figure 5-10 Non-Switching Input Current (I_AVIN)
vs Junction Temperature

I_BP1V5 = 2 mA

V_PVIN = V_AVIN = 12 V

Figure 5-12 BP1V5 Voltage vs Junction Temperature

VIN_OFF = 2.5 V

Figure 5-14 Turnoff Voltage vs Junction Temperature

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発注情報

5.6 Typical Characteristics