JAJSSB2 September   2024 TPS548B23

ADVANCE INFORMATION  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  D-CAP4 Control
      2. 7.3.2  Internal VCC LDO and Using External Bias On the VCC Pin
        1. 7.3.2.1 Powering the Device From a Single Bus
        2. 7.3.2.2 Powering the Device From a Split-Rail Configuration
      3. 7.3.3  Multifunction Configuration (CFG1-5) Pins
        1. 7.3.3.1 Multifunction Configuration (CFG1-2) Pins (Internal Feedback)
        2. 7.3.3.2 Multifunction Configuration (CFG1-2) Pins (External Feedback)
        3. 7.3.3.3 Multifunction Configuration (CFG3-5) Pins
      4. 7.3.4  Enable
      5. 7.3.5  Soft Start
      6. 7.3.6  Power Good
      7. 7.3.7  Overvoltage and Undervoltage Protection
      8. 7.3.8  Remote Sense
      9. 7.3.9  Low-side MOSFET Zero-Crossing
      10. 7.3.10 Current Sense and Positive Overcurrent Protection
      11. 7.3.11 Low-side MOSFET Negative Current Limit
      12. 7.3.12 Output Voltage Discharge
      13. 7.3.13 UVLO Protection
      14. 7.3.14 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Auto-Skip (PFM) Eco-mode Light Load Operation
      2. 7.4.2 Forced Continuous-Conduction Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Voltage Setting Point
        2. 8.2.2.2 Choose the Switching Frequency
        3. 8.2.2.3 Choose the Inductor
        4. 8.2.2.4 Choose the Output Capacitor
        5. 8.2.2.5 Choose the Input Capacitors (CIN)
        6. 8.2.2.6 VCC Bypass Capacitor
        7. 8.2.2.7 BOOT Capacitor
        8. 8.2.2.8 PG Pullup Resistor
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 ドキュメントの更新通知を受け取る方法
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 静電気放電に関する注意事項
    6. 9.6 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
  • VAN|19
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

TJ = –40°C to +150°C, VVCC = 3.3V (external), VVIN = 4V to 16V. Typical values are at TJ = 25°C and VVIN = 12V (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQ(VIN) VIN quiescent current Non-switching, VEN = 2V, VFB = VFB_REG + 50mV, no external bias on VCC pin 970 µA
IQ(VIN) VIN quiescent current with external VCC bias TJ = 25°C, VIN = 12V, VEN = 2V, VFB = VFB_REG + 10mV (non-switching), 3.3V external bias on VCC pin 230 290 µA
ISD(VIN) VIN shutdown supply current VIN = 12 V, VEN = 0 V, no external bias on VCC pin 9.5 20 µA
IQ(VCC) VCC quiescent current TJ = 25°C, VIN = 12V, VEN = 2V, VFB = VFB_REG + 10mV (non-switching), 3.3 V external bias on VCC pin 860 µA
ISD(VCC) VCC shutdown current VEN = 0V, VIN = 0V, 3.3V external bias on VCC pin 90 µA
IVCC VCC external bias current TJ = 25°C, VIN = 12V, VEN = 2V, regular switching, fSW = 600kHz, 3.3V external bias on VCC pin 10 mA
IVCC VCC external bias current TJ = 25°C, VIN = 12V, VEN = 2V, regular switching,  fSW = 1200kHz,  3.3V external bias on VCC pin 16 mA
INTERNAL LDO (VCC)
VVCC Internal LDO output voltage 2.85 3.0 3.1 V
IVCC Internal LDO short-circuit current limit VVIN = 12V 50 180 mA
VCCUVLO(R) VCC UVLO rising threshold VVIN = 4V 2.8 2.85 V
VCCUVLO(F) VCC UVLO falling threshold VVIN = 4V 2.65 V
VCCUVLO(H) VCC UVLO hysteresis VVIN = 4V 0.15 V
FB threshold to turn off VCC LDO VFB falling, EN = 0V
 50 85 mV
UVLO
VINUVLO(R) VIN UVLO rising threshold VIN rising 3.92 3.99 V
VINUVLO(F) VIN UVLO falling threshold VIN falling 3.77 3.83 V
VINUVLO(H) VIN UVLO hysteresis 0.15 V
ENABLE
VEN(R) EN voltage rising threshold EN rising, enable switching 1.15 1.2 1.25 V
VEN(F) EN voltage falling threshold EN falling, disable switching 1.06 1.12 1.18 V
VEN(H) EN voltage hysteresis 80 mV
IEN(Hys) EN pin hysteresis current EN > VEN(R) 5 µA
EN internal pulldown resistance EN pin to AGND 0.74 1 1.27 MΩ
VENSTB(R) EN standby rising threshold EN rising, enable internal LDO, no switching 0.7 V
VENSTB(F) EN standby falling threshold EN Falling, disable internal LDO 0.3 0.6 V
PINSTRAP
CFGx_high CFGx logic high voltage level VCC = 5.0V 3.6 4.2 V
VCC = 3.3V 2.0 2.4 V
CFGx_low CFGx logic low voltage level VCC = 5.0V 0.7 1.0 V
VCC = 3.3V 1.0 1.3 V
RCFG1_TRIP CFG2 resistor step range accuracy External feedback configuration (CFG3-5 = GND)
 – 4%  + 4%
STARTUP
tSS Soft-start time From start of switching to VFB = 0.5V, tSS = 1ms setting 0.5 1 1.5 ms
From start of switching to VFB = 0.5V, tSS = 2ms setting 1.4 2 2.6 ms
From start of switching to VFB = 0.5V, tSS = 3ms setting 2 3 4 ms
EN HIGH to start of switching delay 800 µs
REFERENCE VOLTAGE (FB)
VVOS_REG Output volatge regulation accuracy Internal feedabck configuration, TJ = 0°C to +85°C – 0.75 % + 0.75 %
Internal feedback configuration – 1.25 % +1.25 %
VFB_REG Feedback regulation voltage External Feedback Configuration, TJ = 0°C to +85°C 497.5 500 502.5 mV
External Feedback Configuration 495 500 505 mV
IFB(LKG) FB input leakage current VFB = VFB_REG 160 nA
DIFFERENTIAL REMOTE SENSE AMPLIFIER
IGOSNS Leakage current out of GOS pin VGOS - VAGND = 100mV 80 µA
VICM GOS common mode voltage for regulation VGOS versus VAGND – 0.1 0.1 V
SWITCHING FREQUENCY
fSW(FCCM) Switching frequency, FCCM operation VVIN = 12V, VOUT = 3.3V, FSW = 600kHz, No load 510 600 690 kHz
VVIN = 12V, VOUT = 3.3V, FSW = 800kHz, No load 680 800 920 kHz
VVIN = 12V, VOUT = 3.3V, FSW = 1.0MHz, No load 850 1000 1150 kHz
VVIN = 12V, VOUT = 3.3V, FSW = 1.2MHz, No load 1020 1200 1380 kHz
POWER STAGE
RDSON(HS) High-side MOSFET on-resistance VBOOT-SW = 5.0V 8 mΩ
VBOOT-SW = 3.3V 9.9 mΩ
RDSON(LS) Low-side MOSFET on-resistance VVCC = 5.0V 2.5 mΩ
VVCC = 3.3V 3 mΩ
tON(min) Minimum ON pulse width 25 ns
tOFF(min) Minimum OFF pulse width 150 ns
Output discharge resistor on SW pin VIN = 12V, VSW = 1V, power conversion disabled 100 Ω
IBOOT(LKG) Leakage current into BOOT pin VBOOT-SW = 3.3V, enabled, not switching. 30 µA
POWER GOOD
VPGTH(RISE_OV) Power-Good threshold FB rising, PG high to low 113% 116% 119%
VPGTH(RISE_UV) Power-Good threshold FB rising, PG low to high 89% 92.5% 95%
VPGTH(FALL_UV) Power-Good threshold FB falling, PG high to low 77% 80% 83%
PG delay going from low to high during startup 1.1 1.5 ms
PG delay going from high to low 4 6.2 µs
IPG(LKG) PG pin leakage current when open drain output is high VPG = 4.5V 5 µA
PG pin output low-level voltage IPG = 7\mA 500 mV
OVERCURRENT PROTECTION
OC limit high clamp Valley current on LS FET, CFG3-5 = GND, 0Ω ≤ RILIM ≤ 4.32kΩ 19 21 23 A
ILS(OC) Low-side valley current limit Valley current on LS FET, RILIM = 5.25kΩ  14.5 16 17.5 A
Valley current on LS FET, RILIM = 10.5kΩ  7 8 9 A
Valley current on LS FET, RILIM = 20.0kΩ  3.5 4.2 4.9 A
RILIM ILIM pin resistance range 0 20 kΩ
Low-side valley current limit Valley current on LS FET, CFG3-5 = VCC, CFG1 = VCC 19 21 23 A
Valley current on LS FET, CFG3-5 = VCC, CFG1 = Float 16 18 20 A
Valley current on LS FET, CFG3-5 = VCC, CFG1 = GND 13 15 17 A
ILS(NOC) Low-side negative current limit Sinking current limit on LS FET –10 –8 A
IZC Zero-cross detection current threshold to enter DCM, open loop VIN = 12V –750 mA
IZC(HYS) Zero-cross detection current threshold hysteresis after entering DCM, open loop VIN = 12V 1000 mA
OUTPUT OVP AND UVP
VOVP Overvoltage-protection (OVP) threshold voltage VFB rising 113% 116% 119%
tOVPDLY OVP delay With 100mV overdrive 650 ns
VUVP Undervoltage-protection (UVP) threshold voltage VFB falling 77% 80% 83%
tUVPDLY UVP filter delay 70 µs
Hiccup wait time Hiccup mode enabled 7 x tSS ms
THERMAL SHUTDOWN
TJ(SD) Thermal shutdown threshold Temperature rising 150 165 °C
TJ(HYS) Thermal shutdown hysteresis 15 °C