SLVSEQ0A May 2019 – March 2020 TPS54A24
PRODUCTION DATA.
The device is protected from overcurrent conditions by cycle-by-cycle current limiting on both the high-side MOSFET and the low-side MOSFET. In an extended overcurrent condition the device enters hiccup to reduce power dissipation. Figure 35 shows the typical response with an overload on the output. At time (1) the high-side MOSFET peak current limit starts to limit the peak inductor current. At time (2) the low-side MOSFET forward current limit starts to cause the switching frequency to drop to prevent current runaway.