JAJSC03E january 2014 – may 2023 TPS562200 , TPS563200
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||
I(VIN) | Operating – non-switching supply current | VIN current, TA = 25°C, EN = 5V, VFB = 0.8 V | TPS562200 | 230 | 330 | µA | |
TPS563200 | 190 | 290 | |||||
I(VINSDN) | Shutdown supply current | VIN current, TA = 25°C, EN = 0 V | 3 | 10 | µA | ||
LOGIC THRESHOLD | |||||||
VEN(H) | EN high-level input voltage | EN | 1.6 | V | |||
VEN(L) | EN low-level input voltage | EN | 0.6 | V | |||
REN | EN pin resistance to GND | VEN = 12 V | 225 | 450 | 900 | kΩ | |
VFB VOLTAGE AND DISCHARGE RESISTANCE | |||||||
VFB(TH) | VFB threshold voltage | TA = 25°C, VO =
1.05 V, IO = 10 mA, Eco-mode operation | 772 | mV | |||
TA = 25°C, VO = 1.05 V, continuous mode operation | 758 | 765 | 772 | mV | |||
I(VFB) | VFB input current | VFB = 0.8V, TA = 25°C | 0 | ±0.1 | µA | ||
MOSFET | |||||||
RDS(on)h | High side switch resistance | TA = 25°C, VBST – SW = 5.5 V | TPS562200 | 122 | mΩ | ||
TPS563200 | 68 | mΩ | |||||
RDS(on)l | Low side switch resistance | TA = 25°C | TPS562200 | 72 | mΩ | ||
TPS563200 | 39 | mΩ | |||||
CURRENT LIMIT | |||||||
Iocl | Current limit (1) | DC current, VOUT = 1.05 V, LOUT = 2.2 µF | TPS562200 | 2.5 | 3.2 | 4.3 | A |
DC current, VOUT = 1.05 V, LOUT = 1.5 µF | TPS563200 | 3.5 | 4.2 | 5.3 | A | ||
THERMAL SHUTDOWN | |||||||
TSDN | Thermal shutdown threshold(1) | Shutdown temperature | 155 | °C | |||
Hysteresis | 35 | ||||||
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION | |||||||
VOVP | Output OVP threshold | OVP Detect | 125% x Vfbth | ||||
VUVP | Output Hiccup threshold | Hiccup detect | 65% x Vfbth | ||||
tHiccupOn | Hiccup On Time | Relative to soft-start time | 1 | ms | |||
tHiccupOff | Hiccup Off Time | Relative to soft-start time | 7 | ms | |||
UVLO | |||||||
UVLO | UVLO threshold | Wake up VIN voltage | 3.45 | 3.75 | 4.05 | V | |
Hysteresis VIN voltage | 0.13 | 0.32 | 0.55 |