SLVS302B December   2000  – October 2015 TPS60300 , TPS60301 , TPS60302 , TPS60303

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Power-Good Detector
    4. 9.4 Device Functional Modes
      1. 9.4.1 Start-up Procedure
      2. 9.4.2 Shutdown
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Capacitor Selection
        2. 10.2.2.2 Output Filter Design
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Power Dissipation
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Related Links
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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発注情報

8 Specifications

8.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VIN Input voltage (IN to GND)(2) –0.3 2 V
VOUT Output voltage (OUT1,OUT2, EN, PG to GND)(2) –0.3 V
Voltage (C1+ to GND) –0.3 V
Voltage (C1– to GND, C2– to GND) –0.3 V
Voltage (C2+ to GND) –0.3 V
IOUT Output current (OUT1) 80 mA
IOUT Output current (OUT2) 40 mA
TJ Maximum junction temperature 150 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The voltage at EN and PG can exceed IN up to the maximum rated voltage without increasing the leakage current drawn by these pins.

8.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input voltage 0.9 1.8 V
IOUT(OUT2) Output current (OUT2) 20 mA
IOUT(OUT1) Output current (OUT1) 40 mA
CIN Input capacitor 1 µF
C1F, C2F Flying capacitors 1 µF
COUT(1) Output capacitor 1 µF
COUT(2) Output capacitor 1 µF
TJ Operating junction temperature –40 125 °C

8.4 Thermal Information

THERMAL METRIC(1) TPS6030x UNIT
DGS (VSSOP)
10 PINS
RθJA Junction-to-ambient thermal resistance 156.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 53.0 °C/W
RθJB Junction-to-board thermal resistance 75.5 °C/W
ψJT Junction-to-top characterization parameter 5.4 °C/W
ψJB Junction-to-board characterization parameter 74.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).

8.5 Electrical Characteristics

CIN = C1F = C2F = C(OUT1) = C(OUT2) = 1 µF, TC = –40°C to 85°C, VIN = 1 V, V(EN) = VIN (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Supply voltage range 0.9 1.8 V
IOUT(OUT1) Maximum output current for TPS60300, TPS60302 VIN ≥ 1.1 V, IOUT(OUT2) = 0 mA, I(PG,1) = 0 mA 40 mA
VIN = 0.9 V, IOUT(OUT2) = 0 mA, I(PG,1) = 0 mA 20
IOUT(OUT2) VIN ≥ 1.1 V, IOUT(OUT1) = 0 mA, I(PG,1) = 0 mA 20 mA
VIN = 0.9 V, IOUT(OUT1) = 0 mA, I(PG,1) = 0 mA 10
IOUT(OUT1) Maximum output current for TPS60301, TPS60303 VIN ≥ 1.1 V, IOUT(OUT2) = 0 mA, I(PG,1) = 0 mA 40 mA
VIN = 0.9 V, IOUT(OUT2) = 0 mA, I(PG,1) = 0 mA 20
IOUT(OUT2) VIN ≥ 1 V, IOUT(OUT1) = 0 mA, I(PG,1) = 0 mA 20 mA
VIN = 0.9 V, IOUT(OUT1) = 0 mA, I(PG,1) = 0 mA 12
VOUT(OUT2) Output voltage for TPS60300, TPS60302 1.1 V < VIN < 1.8 V, IOUT(OUT1) = 0 mA,
0 < IOUT(OUT2) < 20 mA		 3.17 3.30 3.43 V
0.9 V < VIN < 1.1 V, IOUT(OUT1) = 0 mA,
IOUT(OUT2) < 10 mA		 3.17 3.30 3.43
VOUT(OUT2) Output voltage for TPS60301, TPS60303 1.0 V < VIN < 1.8 V, IOUT(OUT1) = 0 mA,
0 < IOUT(OUT2) < 20 mA		 2.88 3 3.12 V
VIN > 1.65 V, IOUT(OUT1) = 0 mA,
25 µA < IOUT(OUT2) < 20 mA		 2.88 3 3.15
VP–P Output voltage ripple OUT2 IOUT(OUT2) = 20 mA, IOUT(OUT1) = 0 mA 20 mVP–P
OUT1 IOUT(OUT1) = 40 mA, IOUT(OUT2) = 0 mA 40
IQ Quiescent current (no-load input current) IOUT(OUT) = 0 mA, VIN = 1.8 V 35 70 µA
I(SD) Shutdown supply current VIN = 1.8 V, V(EN) = 0 V(1) 0.05 2.5 µA
VIN = 1.8 V, V(EN) = 0 V, TC = 25°C(1) 0.5
fOSC Internal switching frequency 470 700 900 kHz
VIL(EN) EN input low voltage VIN = 0.9 V to 1.8 V 0.3 × VIN V
VIH(EN) EN input high voltage VIN = 0.9 V to 1.8 V 0.7 × VIN V
Ilkg EN input leakage current V(EN) = 0 V or VIN or VOUT(OUT2) or VOUT(OUT1) 0.01 0.1 µA
LinSkip switching threshold VIN = 1.25 V 7.5 mA
Short circuit current VIN = 1.8 V VOUT(OUT2) = 0 V 5 20 50 mA
VOUT(OUT1) = 0 V 2 80 150
Output leakage current OUT2 VO(OUT1) = 3 V, VOUT(OUT2) = nominal, EN = 0 V 1 µA
Output load regulation VIN = 1.25 V, TC = 25°C, 2 mA < IOUT(OUT2) < 20 mA 0.1 %/mA
Output line regulation 1 V < VIN < 1.65 V; TC = 25°C, IOUT(OUT) = 10 mA 0.75 %/V
No-load start-up time 400 µs
Impedance of first charge pump stage 4 Ω
Start-up performance at OUT2 (minimum start-up load resistance) VIN ≥ 1.1 V 165 Ω
VIN ≥ 1 V 330
VIN = 0.9 V 1000
Start-up performance at OUT1 (minimum start-up load resistance) VIN = 1 V 500 Ω
FOR POWER GOOD COMPARATOR:
V(PG) Power good trip voltage VOUT ramping positive VOUT – 2% VOUT V
Vhys Power good trip voltage hysteresis VOUT ramping negative 10%
VOL Power good output voltage low VOUT = 0 V, I(PG) = 1.6 mA 0.3 V
Ilkg Power good leakage current TPS60300 VOUT = 3.3 V, V(PG) = 3.3 V 0.01 0.1
TPS60301 VOUT = 3 V, V(PG) = 3 V 0.01 0.1 µA
VOH Power good output voltage high TPS60303 I(PG) = –5 mA 3 V
TPS60302 2.7
IOUT(PG,0) Output current at power good (sink) All devices V(PG) = 0 V 1.6 mA
R(PG,1) Output resistance at power good TPS60302, TPS60303 V(PG) = VO(OUT2) 15 Ω
R(PG,0) All devices V(PG) = 0 V 100 Ω
(1) OUT1 not loaded. If OUT1 is connected to GND through a resistor, leakage current will be increased.

8.6 Typical Characteristics

TPS60300 TPS60301 TPS60302 TPS60303 typchar4.png Figure 1. TPS6030x
Quiescent Current vs Input Voltage
TPS60300 TPS60301 TPS60302 TPS60303 typchar17.png Figure 2. Switching Frequency vs Input Voltage