SLVS314F SEPTEMBER 2000 – August 2015 TPS61010 , TPS61012 , TPS61013 , TPS61014 , TPS61015 , TPS61016
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | VBAT, VOUT, EN, LBI, FB, ADEN | –0.3 | 3.6 | V |
SW | –0.3 | 7 | V | |
Voltage | LBO, COMP | –0.3 | 3.6 | V |
Operating free-air temperature range, TA | –40 | 85 | °C | |
Maximum junction temperature, TJ | 150 | °C | ||
Storage temperature range, Tstg | –65 | 150 | °C |
VALUEMAX | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VI | Supply voltage at VBAT | 0.8 | VOUT | V | |
IO | Maximum output current at VIN = 1.2 V | 100 | mA | ||
IO | Maximum output current at VIN = 2.4 V | 200 | mA | ||
L1 | Inductor | 10 | 33 | µH | |
CI | Input capacitor | 10 | µF | ||
Co | Output capacitor | 10 | 22 | 47 | µF |
TJ | Operating virtual junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS6101x | TPS61010 | UNIT | |
---|---|---|---|---|
DGS | DRC | |||
10 PINS | ||||
RθJA | Junction-to-ambient thermal resistance | 161.8 | 43.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 36.3 | 67.4 | |
RθJB | Junction-to-board thermal resistance | 82.7 | 18.1 | |
ψJT | Junction-to-top characterization parameter | 1.3 | 1.6 | |
ψJB | Junction-to-board characterization parameter | 81.1 | 18.2 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | 5.2 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VI | Minimum input voltage for start-up | RL = 33 Ω | 0.85 | 0.9 | V | ||
RL = 3 kΩ, TA = 25 °C | 0.8 | ||||||
Input voltage once started | IO = 100 mA | 0.8 | |||||
VO | Programmable output voltage range |
TPS61010, IOUT = 100 mA | 1.5 | 3.3 | V | ||
Output voltage | TPS61011, 0.8 V < VI < VO, IO = 0 to 100 mA | 1.45 | 1.5 | 1.55 | V | ||
TPS61012, 0.8 V < VI < VO, IO = 0 to 100 mA | 1.74 | 1.8 | 1.86 | ||||
TPS61013, 0.8 V < VI < VO, IO = 0 to 100 mA | 2.42 | 2.5 | 2.58 | V | |||
TPS61013, 1.6 V < VI < VO, IO = 0 to 200 mA | 2.42 | 2.5 | 2.58 | V | |||
TPS61014, 0.8 V < VI < VO, IO = 0 to 100 mA | 2.72 | 2.8 | 2.88 | V | |||
TPS61014, 1.6 V < VI < VO, IO = 0 to 200 mA | 2.72 | 2.8 | 2.88 | V | |||
TPS61015, 0.8 V < VI < VO, IO = 0 to 100 mA | 2.9 | 3.0 | 3.1 | V | |||
TPS61015, 1.6 V < VI < VO, IO = 0 to 200 mA | 2.9 | 3.0 | 3.1 | V | |||
TPS61016, 0.8 V < VI < VO, IO = 0 to 100 mA | 3.2 | 3.3 | 3.4 | V | |||
TPS61016, 1.6 V < VI < VO, IO = 0 to 200 mA | 3.2 | 3.3 | 3.4 | V | |||
IO | Maximum continuous output current | VI > 0.8 V | 100 | mA | |||
VI > 1.8 V | 250 | ||||||
I(SW) | Switch current limit | TPS61011, once started | 0.39 | 0.48 | A | ||
TPS61012, once started | 0.54 | 0.56 | |||||
TPS61013, once started | 0.85 | 0.93 | |||||
TPS61014, once started | 0.95 | 1.01 | |||||
TPS61015, once started | 1 | 1.06 | |||||
TPS61016, once started | 1.07 | 1.13 | |||||
V(FB) | Feedback voltage | 480 | 500 | 520 | mV | ||
f | Oscillator frequency | 420 | 500 | 780 | kHz | ||
D | Maximum duty cycle | 85% | |||||
rDS(on) | NMOS switch on-resistance | VO = 1.5 V | 0.37 | 0.51 | Ω | ||
PMOS switch on-resistance | 0.45 | 0.54 | |||||
rDS(on) | NMOS switch on-resistance | VO = 3.3 V | 0.2 | 0.37 | Ω | ||
PMOS switch on-resistance | 0.3 | 0.45 | |||||
Line regulation (1) | VI = 1.2 V to 1.4 V, IO = 100 mA | 0.3 | %/V | ||||
Load regulation (1) | VI = 1.2 V; IO = 50 mA to 100 mA | 0.1 | |||||
Autodischarge switch resistance |
300 | 400 | Ω | ||||
Residual output voltage after autodischarge | ADEN = VBAT; EN = GND | 0.4 | V | ||||
VIL | LBI voltage threshold (2) | V(LBI) voltage decreasing | 480 | 500 | 520 | mV | |
LBI input hysteresis | 10 | mv | |||||
LBI input current | 0.01 | 0.03 | |||||
VOL | LBO output low voltage | V(LBI) = 0 V, VO = 3.3 V, I(OL) = 10 µA | 0.04 | 0.2 | V | ||
LBO output leakage current | V(LBI) = 650 mV, V(LBO) = VO | 0.03 | µA | ||||
I(FB) | FB input bias current (TPS61010 only) | V(FB) = 500 mV | 0.01 | 0.03 | |||
VIL | EN and ADEN input low voltage | 0.8 V < VBAT < 3.3 V | 0.2 × VBAT | V | |||
VIH | EN and ADEN input high voltage | 0.8 V < VBAT < 3.3 V | 0.8 ×VBAT | V | |||
EN and ADEN input current | EN and ADEN = GND or VBAT | 0.01 | 0.03 | µA | |||
Iq | Quiescent current into pins VBAT/SW and VOUT | IL = 0 mA, VEN = VI | VBAT/SW | 31 | 46 | µA | |
VO | 5 | 8 | |||||
Ioff | Shutdown current from power source | VEN = 0 V, ADEN = VBAT, TA= 25°C | 1 | 3 | µA |
FIGURE | ||
---|---|---|
Maximum output current | vs Input voltage for VO = 2.5 V, 3.3 V | Figure 1 |
vs Input voltage for VO = 1.5 V, 1.8 V | Figure 2 | |
Efficiency | vs Output current for VI = 1.2 VVO = 1.5 V, L1 = Sumida CDR74 - 10 µH | Figure 3 |
vs Output current for VI = 1.2 VVO = 2.5 V, L1 = Sumida CDR74 - 10 µH | Figure 4 | |
vs Output current for VIN = 1.2 VVO = 3.3 V, L1 = Sumida CDR74 - 10 µH | Figure 5 | |
vs Output current for VI = 2.4 VVO = 3.3 V, L1 = Sumida CDR74 - 10 µH | Figure 6 | |
vs Input voltage for IO = 10 mA, IO = 100 mA, IO = 200 mAVO = 3.3 V, L1 = Sumida CDR74 - 10 µH | Figure 7 | |
TPS61016, VBAT = 1.2 V, IO = 100 mA | Figure 8 | |
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Output voltage | vs Output current TPS61011 | Figure 9 |
vs Output current TPS61013 | Figure 10 | |
vs Output current TPS61016 | Figure 11 | |
Minimum supply start-up voltage | vs Load resistance | Figure 12 |
No-load supply current | vs Input voltage | Figure 13 |
Shutdown supply current | vs Input voltage | Figure 14 |
Switch current limit | vs Output voltage | Figure 15 |