SLVSA31A November 2009 – December 2014 TPS61029-Q1
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage range | SW, VOUT, LBO, VBAT, PS, EN, FB, LBI | –0.3 | 7 | V |
TJ | Operating virtual junction temperature range | –40 | 150 | °C |
Tstg | Storage temperature range | –65 | 150 |
VALUE | UNIT | ||||
---|---|---|---|---|---|
TPS61025-Q1, TPS61027-Q1, and TPS61029-Q1 in DRC package | |||||
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V | |
Charged-device model (CDM), per AEC Q100-011 | All pins except EN, GND, VBAT, and PGND | ±500 | |||
Corner pins (EN, GND, VBAT, and PGND) | ±750 | ||||
TPS61029-Q1 in DPN package | |||||
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V | |
Charged-device model (CDM), per AEC Q100-011 | All pins except EN, GND, VBAT, and PGND | ±500 | |||
Corner pins (EN, GND, VBAT, and PGND) | ±750 |
MIN | MAX | UNIT | |
---|---|---|---|
Supply voltage at VBAT, VI (TPS61025, TPS61027) | 0.9 | 6.5 | V |
Supply voltage at VBAT, VI (TPS61029) | 0.9 | 5.5 | V |
Operating virtual junction temperature range, TJ | –40 | 125 | °C |
THERMAL METRIC(1) | DRC | DPN | UNIT | |
---|---|---|---|---|
10 PINS | 10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 47.2 | 47.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 67.5 | 58.3 | |
RθJB | Junction-to-board thermal resistance | 21.6 | 22.4 | |
ψJT | Junction-to-top characterization parameter | 1.7 | 0.9 | |
ψJB | Junction-to-board characterization parameter | 21.8 | 22.5 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 3.6 | 4.5 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
DC/DC STAGE | |||||||
VI | Minimum input voltage for start-up | RL = 120 Ω | 0.9 | 1.2 | V | ||
Input voltage range, after start-up (TPS61025, TPS61027) |
0.9 | 6.5 | V | ||||
Input voltage range, after start-up (TPS61029) | 0.9 | 5.5 | V | ||||
VO | Output voltage range (TPS61029) | 1.8 | 5.5 | V | |||
VFB | Feedback voltage (TPS61025, TPS61027) | 490 | 500 | 510 | mV | ||
f | Oscillator frequency | 480 | 600 | 720 | kHz | ||
ISW | Switch current limit (TPS61025, TPS61027) | VOUT = 3.3 V | 1200 | 1500 | 1800 | mA | |
ISW | Switch current limit (TPS61029) | VOUT = 3.3 V | 1500 | 1800 | 2100 | mA | |
Start-up current limit | 0.4 x ISW | mA | |||||
SWN switch on resistance | VOUT = 3.3 V | 260 | mΩ | ||||
SWP switch on resistance | VOUT = 3.3 V | 290 | mΩ | ||||
Total accuracy (including line and load regulation) | ±3% | ||||||
Line regulation | 0.6% | ||||||
Load regulation | 0.6% | ||||||
Quiescent current | VBAT | IO = 0 mA, VEN = VBAT = 1.2 V, VOUT = 3.3 V, TA = 25°C |
1 | 3 | µA | ||
VOUT | 25 | 45 | µA | ||||
Shutdown current | VEN = 0 V, VBAT = 1.2 V, TA = 25°C |
0.1 | 1 | µA | |||
CONTROL STAGE | |||||||
VUVLO | Undervoltage lockout threshold | VLBI voltage decreasing | 0.8 | V | |||
VIL | LBI voltage threshold | VLBI voltage decreasing | 490 | 500 | 510 | mV | |
LBI input hysteresis | 10 | mV | |||||
LBI input current | EN = VBAT or GND | 0.01 | 0.1 | µA | |||
VOL | LBO output low voltage | VO = 3.3 V, IOI = 100 µA | 0.04 | 0.4 | V | ||
Vlkg | LBO output leakage current | VLBO = 7 V | 0.01 | 0.1 | µA | ||
VIL | EN, PS input low voltage | 0.2 × VBAT | V | ||||
VIH | EN, PS input high voltage | 0.8 × VBAT | V | ||||
EN, PS input current | Clamped on GND or VBAT | 0.01 | 0.1 | µA | |||
Overtemperature protection | 140 | °C | |||||
Overtemperature hysteresis | 20 | °C |