SGLS276D January 2005 – March 2016 TPS61040-Q1 , TPS61041-Q1
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltages on pin VIN (2) | –0.3 | 7 | V | |
Voltages on pins EN, FB (2) | –0.3 | VIN + 0.3 | V | |
Switch voltage on pin SW (2) | 30 | V | ||
Continuous power dissipation | See Thermal Information | |||
TJ | Operating junction temperature | –40 | 150 | °C |
TStg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±750 |
MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Input voltage | 1.8 | 6 | V | |
VOUT | Output voltage | 28 | V | ||
L | Inductor(1) | 2.2 | 10 | 47 | μH |
f | Switching frequency(1) | 1 | MHz | ||
CIN | Input capacitor (1) | 4.7 | μF | ||
COUT | Output capacitor (1) | 1 | μF | ||
TA | Operating ambient temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS6104x-Q1 | UNIT | |
---|---|---|---|
DBV (SOT-23) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 153.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 105.7 | °C/W |
RθJB | Junction-to-board thermal resistance | 33.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 9.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 33.1 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
SUPPLY CURRENT | |||||||
VIN | Input voltage range | 1.8 | 6 | V | |||
IQ | Operating quiescent current | IOUT = 0 mA, not switching, VFB = 1.3 V | 28 | 50 | μA | ||
ISD | Shutdown current | EN = GND | 0.1 | 1 | μA | ||
VUVLO | Undervoltage lockout threshold | 1.5 | 1.7 | V | |||
ENABLE | |||||||
VIH | EN high level input voltage | 1.3 | V | ||||
VIL | EN low level input voltage | 0.4 | V | ||||
II | EN input leakage current | EN = GND or VIN | 0.1 | 1 | μA | ||
POWER SWITCH AND CURRENT LIMIT | |||||||
Vsw | Maximum switch voltage | 30 | V | ||||
toff | Minimum OFF time | 250 | 400 | 550 | ns | ||
ton | Maximum ON time | 4 | 6 | 7.5 | μs | ||
RDS(on) | MOSFET ON-resistance | VIN = 2.4 V; ISW = 200 mA; TPS61040-Q1 | 600 | 1100 | mΩ | ||
RDS(on) | MOSFET ON-resistance | VIN = 2.4 V; ISW = 200 mA; TPS61041-Q1 | 750 | 1300 | mΩ | ||
MOSFET leakage current | VSW = 28 V | 1 | 10 | μA | |||
ILIM | MOSFET current limit | TPS61040-Q1 | 325 | 400 | 500 | mA | |
ILIM | MOSFET current limit | TPS61041-Q1 | 200 | 250 | 325 | mA | |
OUTPUT | |||||||
VOUT | Adjustable output voltage range(2) | VIN | 28 | V | |||
Vref | Internal voltage reference | 1.233 | V | ||||
IFB | Feedback input bias current | VFB = 1.3 V | 1 | μA | |||
VFB | Feedback trip point voltage | 1.8 V ≤ VIN ≤ 6 V | TJ = –40°C to 85°C | 1.208 | 1.233 | 1.258 | V |
TJ = –40°C to 125°C | 1.2 | 1.233 | 1.27 | ||||
Line regulation (1) | 1.8 V ≤ VIN ≤ 6 V; VOUT = 18 V; Iload = 10 mA; CFF = not connected |
0.05 | %/V | ||||
Load regulation(1) | VIN = 2.4 V; VOUT = 18 V; 0 mA ≤ IOUT ≤ 30 mA | 0.15 | %/mA |
FIGURE | |||
---|---|---|---|
η | Efficiency | vs Load current | Figure 1, Figure 2, Figure 3 |
vs Input voltage | Figure 4 | ||
IQ | Quiescent current | vs Input voltage and temperature | Figure 5 |
VFB | Feedback voltage | vs Temperature | Figure 6 |
ISW | Switch current limit | vs Temperature | Figure 7 |
ICL | Switch current limit | vs Supply voltage, TPS61041-Q1 | Figure 8 |
vs Supply voltage, TPS61040-Q1 | Figure 9 | ||
RDS(on) | RDS(on) | vs Temperature | Figure 10 |
vs Supply voltage | Figure 11 | ||
Line transient response | Figure 13 | ||
Load transient response | Figure 14 | ||
Start-up behavior | Figure 15 |