SLVSAX2B September   2011  – June 2020 TPS61170-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Soft Start-up
      2. 7.3.2 Overcurrent Protection
      3. 7.3.3 Undervoltage Lockout
      4. 7.3.4 Thermal Shutdown
      5. 7.3.5 Enable and Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 PWM Program Mode
      2. 7.4.2 1-Wire Program Mode
      3. 7.4.3 EasyScale
    5. 7.5 Programming
      1. 7.5.1 Feedback Reference Program Mode Selection
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 12-V to 24-V DC-DC Power Conversion
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Program Output Voltage
          2. 8.2.1.2.2 Maximum Output Current
          3. 8.2.1.2.3 Switch Duty Cycle
          4. 8.2.1.2.4 Inductor Selection
          5. 8.2.1.2.5 Schottky Diode Selection
          6. 8.2.1.2.6 Compensation Capacitor Selection
          7. 8.2.1.2.7 Input and Output Capacitor Selection
        3. 8.2.1.3 Application Curve
      2. 8.2.2 5-V to 12-V DC-DC Power Conversion With Programmable Feedback Reference Voltage
      3. 8.2.3 12-V SEPIC (Buck-Boost) Converter
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.5 Electrical Characteristics

VIN = 3.6 V, CTRL = VIN, TA = –40°C to 125°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
VI Input voltage range, VIN 3.0 18 V
IQ Operating quiescent current into VIN Device PWM switching no load 2.3 mA
ISD Shutdown current CRTL = GND, VIN = 4.2 V 1 μA
UVLO Undervoltage lockout threshold VIN falling 2.2 2.5 V
Vhys Undervoltage lockout Hysteresis 70 mV
ENABLE AND REFERENCE CONTROL
V(CTRLh) CTRL logic high voltage VIN = 3 V to 18 V 1.2 V
V(CTRL) CTRL logic low voltage VIN = 3 V to 18 V 0.4 V
R(CTRL) CTRL pulldown resistor 400 800 1600 kΩ
VOLTAGE AND CURRENT CONTROL
VREF Voltage feedback regulation voltage 1.204 1.229 1.254 V
V(REF_PWM) Voltage feedback regulation voltage under reprogram VFB = 492 mV 477 492 507 mV
IFB Voltage feedback input bias current VFB = 1.229 V 200 nA
Dmax Maximum duty cycle VFB = 100 mV 90% 93%
Isink Comp pin sink current 100 μA
Isource Comp pin source current 100 μA
Gea Error amplifier transconductance 240 320 400 μmho
Rea Error amplifier output resistance 5 pF connected to COMP 6 MΩ
POWER SWITCH
RDS(on) N-channel MOSFET ON-resistance VIN = 3.6 V 0.3 0.6 Ω
VIN = 3.0 V 0.7
ILN_NFET N-channel leakage current VSW = 35 V, TA = 25°C 1 μA
OC AND SS
ILIM N-channel MOSFET current limit D = Dmax 0.96 1.2 1.44 A
ILIM_Start Start-up current limit D = Dmax 0.7 A
EasyScale TIMING
VACKNL Acknowledge output voltage low Open-drain, Rpullup =15 kΩ to Vin 0.4 V
THERMAL SHUTDOWN
Tshutdown Thermal shutdown threshold 160 °C
Thysteresis Thermal shutdown threshold hysteresis 15 °C
(1) Acknowledge condition active 0, this condition will only be applied if the RFA bit is set. Open-drain output, line must be pulled high by the host with resistor load.