SLVS978D March 2010 – September 2016 TPS61310 , TPS61311
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | AVIN, VOUT, SW, LED1, LED2, LED3, SCL, SDA, STRB0, STRB1, NRESET, GPIO/PG, Tx-MASK, TS | –0.3 | 7 | V |
Current on GPIO/PG | ±25 | mA | ||
Power dissipation | Internally limited | |||
Operating ambient temperature, TA(2) | –40 | 85 | °C | |
Maximum operating junction temperature, TJ(2) | 150 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS6131x | UNIT | |
---|---|---|---|
YFF (DSBGA) | |||
20 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 71 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 0.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 21 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 11.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
VIN | Input voltage | 2.5 | 5.5 | V | ||
IQ | Operating quiescent current into AVIN | IOUT = 0 mA, device not switching (Power Safe Mode), –40°C ≤ TJ ≤ 85°C | 590 | 700 | µA | |
IOUT(DC) = 0 mA, PWM operation VOUT = 4.95 V, voltage regulation mode |
11.3 | mA | ||||
ISD | Shutdown current | –40°C ≤ TJ ≤ 85°C | 1 | 5 | µA | |
VUVLO | Undervoltage lockout threshold (analog circuitry) |
VIN falling | 2.3 | 2.4 | V | |
OUTPUT | ||||||
VOUT | Output voltage | Current regulation mode | VIN | 5.5 | V | |
Voltage regulation mode | 3.825 | 5.7 | ||||
Internal feedback voltage accuracy | 2.5 V ≤ VIN ≤ 4.8 V, –20°C ≤ TJ ≤ 125°C, Boost mode, PWM voltage regulation | –2% | 2% | |||
Power-save mode ripple voltage | IOUT = 10 mA | 0.015 × VOUT | VP–P | |||
OVP | Output overvoltage protection | VOUT rising, 0000 ≤ OV[3:0] ≤ 0100 | 4.5 | 4.65 | 4.8 | V |
VOUT rising, 0101 ≤ OV[3:0] ≤ 1111 | 5.8 | 6 | 6.2 | |||
Output overvoltage protection hysteresis | VOUT falling | 0.15 | ||||
POWER SWITCH | ||||||
rDS(on) | Switch MOSFET ON-resistance | VOUT = VGS = 3.6 V | 90 | mΩ | ||
Rectifier MOSFET ON-resistance | VOUT = VGS = 3.6 V | 135 | mΩ | |||
Ilkg(SW) | Leakage into SW | VOUT = 0 V, SW = 3.6 V, –40°C ≤ TJ ≤ 85°C | 0.3 | 4 | µA | |
Ilim | Rectifier valley current limit (open loop) | VOUT = 4.95 V, –20°C ≤ TJ ≤ 85°C, PWM operation, relative to selected ILIM |
–15% | 15% | ||
OSCILLATOR | ||||||
fOSC | Oscillator frequency | 1.92 | MHz | |||
fACC | Oscillator frequency | –10% | 7% | |||
THERMAL SHUTDOWN, HOT DIE DETECTOR | ||||||
Thermal shutdown(2) | 140 | 160 | °C | |||
Thermal shutdown hysteresis(2) | 20 | °C | ||||
Hot die detector accuracy(2) | –8 | 8 | °C | |||
LED CURRENT REGULATOR | ||||||
LED1 and LED3 current accuracy(1) | 0.4 V ≤ VLED[1,3] ≤ 2 V, 0 mA ≤ ILED[1,3] ≤ 100 mA, TJ = 85°C |
–10% | 10% | |||
0.4 V ≤ VLED[1,3] ≤ 2 V, 100 mA < ILED[1,3] ≤ 400 mA, TJ = 85°C |
–7.5% | 7.5% | ||||
LED2 current accuracy(1) | 0.4 V ≤ VLED2 ≤ 2 V, 0 mA ≤ ILED2 ≤ 250 mA, TJ = 85°C |
–10% | 10% | |||
0.4 V ≤ VLED2 ≤ 2 V, 250 mA ≤ ILED2 ≤ 800 mA, TJ = 85°C |
–7.5% | 7.5% | ||||
LED1 and LED3 current matching(1) | –10% | 10% | ||||
LED1, LED2, and LED3 current temperature coefficient | 0.05 | %/°C | ||||
INDLED current accuracy | 1.5 V ≤ (VIN – VINDLED) ≤ 2.5 V 2.6 mA ≤ IINDLED ≤ 15.8 mA, TJ = 25°C |
–20% | 20% | |||
INDLED current temperature coefficient | 0.05 | %/°C | ||||
LED1, LED2, and LED3 sense voltage | ILED[1,2,3] = full-scale current | 400 | mV | |||
VDO | VOUT dropout voltage | IOUT = –15.8 mA, TJ = 25°C, device not switching | 250 | mV | ||
LED1, LED2, and LED3 input leakage current | VLED[1,2,3] = VOUT = 5 V, –40°C ≤ TJ ≤ 85°C | 0.1 | 4 | µA | ||
INDLED input leakage current | VINDLED = 0 V, –40°C ≤ TJ ≤ 85°C | 0.1 | 1 | µA | ||
LED TEMPERATURE MONITORING | ||||||
IO(TS) | Temperature Sense Current Source | Thermistor bias current | 23.8 | µA | ||
TS Resistance (Warning Temperature) | LEDWARN bit = 1 | 39 | 44.5 | 50 | kΩ | |
TS Resistance (Hot Temperature) | LEDHOT bit = 1 | 12.5 | 14.5 | 16.5 | kΩ | |
SDA, SCL, GPIO/PG, Tx-MASK, STRB0, STRB1, NRESET | ||||||
V(IH) | High-level input voltage | 1.2 | V | |||
V(IL) | Low-level input voltage | 0.4 | V | |||
V(OL) | Low-level output voltage (SDA) | IOL = 8 mA | 0.3 | V | ||
Low-level output voltage (GPIO) | DIR = 1, IOL = 5 mA | 0.3 | ||||
V(OH) | High-level output voltage (GPIO) | DIR = 1, GPIOTYPE = 0, IOH = 8 mA | VIN – 0.4 | V | ||
I(LKG) | Logic input leakage current | Input connected to VIN or GND, –40°C ≤ TJ ≤ 85°C | 0.01 | 0.1 | µA | |
RPD | STRB0, STRB1 pulldown resistance | STRB0, STRB1 ≤ 0.4 V | 400 | kΩ | ||
NRESET pulldown resistance | NRESET ≤ 0.4 V | 400 | ||||
Tx-MASK pulldown resistance | Tx-MASK ≤ 0.4 V | 400 | ||||
C(IN) | SDA Input Capacitance | SDA = VIN or GND | 9 | pF | ||
SCL Input Capacitance | SCL = VIN or GND | 4 | ||||
GPIO/PG Input Capacitance | DIR = 0, GPIO/PG = VIN or GND | 9 | ||||
STRB0 Input Capacitance | STRB0 = VIN or GND | 3 | ||||
STRB1 Input Capacitance | STRB1 = VIN or GND | 3 | ||||
NRESET Input Capacitance | NRESET = VIN or GND | 3.5 | ||||
Tx-MASK Input Capacitance | Tx-MASK = VIN or GND | 4 | ||||
TIMING | ||||||
tNRESET | Reset pulse width | 10 | µs | |||
Start-up time | From shutdown into video light mode ILED = 150 mA |
1.2 | ms | |||
LED current settling time(3) triggered by a rising edge on STRB0 | MODE_CTRL[1:0] = 10, ILED2 = from 0 mA to 950 mA | 500 | µs | |||
LED current settling time(3) triggered by Tx-MASK | MODE_CTRL[1:0] = 10, ILED2 = from 950 mA to 150 mA | 20 | µs |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
f(SCL) | SCL Clock Frequency | Standard mode | 100 | kHz | |
Fast mode | 400 | ||||
High-speed mode (write operation), CB – 100 pF max | 3.4 | MHz | |||
High-speed mode (read operation), CB – 100 pF max | 3.4 | ||||
High-speed mode (write operation), CB – 400 pF max | 1.7 | ||||
High-speed mode (read operation), CB – 400 pF max | 1.7 | ||||
tBUF | Bus Free Time Between a STOP and START Condition | Standard mode | 4.7 | µs | |
Fast mode | 1.3 | ||||
tHD, tSTA | Hold Time (Repeated) START Condition |
Standard mode | 4 | µs | |
Fast mode | 600 | ns | |||
High-speed mode | 160 | ||||
tLOW | LOW Period of the SCL Clock | Standard mode | 4.7 | µs | |
Fast mode | 1.3 | ||||
High-speed mode, CB – 100 pF max | 160 | ns | |||
High-speed mode, CB – 400 pF max | 320 | ||||
tHIGH | HIGH Period of the SCL Clock | Standard mode | 4 | µs | |
Fast mode | 600 | ns | |||
High-speed mode, CB – 100 pF max | 60 | ||||
High-speed mode, CB – 400 pF max | 120 | ||||
tSU, tSTA | Setup Time for a Repeated START Condition | Standard mode | 4.7 | µs | |
Fast mode | 600 | ns | |||
High-speed mode | 160 | ||||
tSU, tDAT | Data Setup Time | Standard mode | 250 | ns | |
Fast mode | 100 | ||||
High-speed mode | 10 | ||||
tHD, tDAT | Data Hold Time | Standard mode | 0 | 3.45 | µs |
Fast mode | 0 | 0.9 | |||
High-speed mode, CB – 100 pF max | 0 | 70 | ns | ||
High-speed mode, CB – 400 pF max | 0 | 150 | |||
tRCL | Rise Time of SCL Signal | Standard mode | 20 + 0.1 × CB | 1000 | ns |
Fast mode | 20 + 0.1 × CB | 300 | |||
High-speed mode, CB – 100 pF max | 10 | 40 | |||
High-speed mode, CB – 400 pF max | 20 | 80 | |||
tRCL1 | Rise Time of SCL Signal After a Repeated START Condition and After an Acknowledge BIT | Standard mode | 20 + 0.1 × CB | 1000 | ns |
Fast mode | 20 + 0.1 × CB | 300 | |||
High-speed mode, CB – 100 pF max | 10 | 80 | |||
High-speed mode, CB – 400 pF max | 20 | 160 | |||
tFCL | Fall Time of SCL Signal | Standard mode | 20 + 0.1 × CB | 300 | ns |
Fast mode | 20 + 0.1 × CB | 300 | |||
High-speed mode, CB – 100 pF max | 10 | 40 | |||
High-speed mode, CB – 400 pF max | 20 | 80 | |||
tRDA | Rise Time of SDA Signal | Standard mode | 20 + 0.1 × CB | 1000 | ns |
Fast mode | 20 + 0.1 × CB | 300 | |||
High-speed mode, CB – 100 pF max | 10 | 80 | |||
High-speed mode, CB – 400 pF max | 20 | 160 | |||
tFDA | Fall Time of SDA Signal | Standard mode | 20 + 0.1 × CB | 300 | ns |
Fast mode | 20 + 0.1 × CB | 300 | |||
High-speed mode, CB – 100 pF max | 10 | 80 | |||
High-speed mode, CB – 400 pF max | 20 | 160 | |||
tSU, tSTO | Setup Time for STOP Condition | Standard mode | 4 | µs | |
Fast mode | 600 | ns | |||
High-speed mode | 160 | ||||
CB | Capacitive Load for SDA and SCL | 400 | pF |
PACKAGE | POWER RATING (TA = 25°C) | DERATING FACTOR ABOVE TA = 25°C(1) |
---|---|---|
YFF | 1.4 W | 14 mW/°C |
CAPTION | FIGURE | |
---|---|---|
LED Power Efficiency | Input Voltage | Figure 3, Figure 4 |
DC Input Current | Input Voltage | Figure 5 |
LED Current | LED Pin Headroom Voltage | Figure 6, Figure 7 |
LED Current | LED Current Digital Code | Figure 8, Figure 9, Figure 10, Figure 11 |
INDLED Current | INDLED Pin Headroom Voltage | Figure 12 |
Efficiency | Output Current | Figure 13, Figure 14 |
DC Output Voltage | Load Current | Figure 15, Figure 16 |
Maximum Output Current | Input Voltage | Figure 17 |
DC Precharge Current | Differential I/O Voltage | Figure 18, Figure 19 |
Supply Current | Input Voltage | Figure 20 |
Temperature Detection Threshold | Figure 21, Figure 22 | |
Junction Temperature | Port Voltage | Figure 23 |