SLVSA95B March 2010 – July 2015 TPS62060 , TPS62061 , TPS62063
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Voltage(2) | AVIN, PVIN | –0.3 | 7 | V | |
EN, MODE, FB | –0.3 | VIN +0.3 < 7 | |||
SW | –0.3 | 7 | |||
Current (source) | Peak output | Internally limited | A | ||
Temperature | Junction, TJ | –40 | 125 | °C | |
Storage, Tstg | –65 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
AVIN , PVIN | Supply voltage | 2.7 | 6 | V | |
Output current capability | 1600 | mA | |||
Output voltage for adjustable voltage | 0.8 | VIN | V | ||
L | Effective inductance | 0.7 | 1 | 1.6 | µH |
COUT | Effective output capacitance | 4.5 | 10 | 22 | µF |
TA | Operating ambient temperature(1) | –40 | 85 | °C | |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS62060, TPS62061, TPS62063 | UNIT | |
---|---|---|---|
DSG (WSON) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 64.68 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 80.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 34.63 | °C/W |
ψJT | Junction-to-top characterization parameter | 1.65 | °C/W |
ψJB | Junction-to-board characterization parameter | 35.02 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 6.61 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
VIN | Input voltage range | 2.7 | 6 | V | ||
IQ | Operating quiescent current | IOUT = 0 mA, device operating in PFM mode and device not switching |
18 | 25 | μA | |
ISD | Shutdown current | EN = GND, current into AVIN and PVIN | 0.1 | 1 | μA | |
VUVLO | Undervoltage lockout threshold | Falling | 1.73 | 1.78 | 1.83 | V |
Rising | 1.9 | 1.95 | 1.99 | |||
ENABLE, MODE | ||||||
VIH | High level input voltage | 2.7 V ≤ VIN ≤ 6 V | 1 | 6 | V | |
VIL | Low level input voltage | 2.7 V ≤ VIN ≤ 6 V | 0 | 0.4 | V | |
IIN | Input bias current | Pin tied to GND or VIN | 0.01 | 1 | μA | |
POWER SWITCH | ||||||
RDS(on) | High-side MOSFET on-resistance | VIN = 3.6 V (2) | 120 | 180 | mΩ | |
VIN = 5 V(2) | 95 | 150 | ||||
Low-side MOSFET on-resistance | VIN = 3.6 V(2) | 90 | 130 | mΩ | ||
VIN = 5 V(2) | 75 | 100 | ||||
ILIMF | Forward current limit MOSFET high-side and low-side | 2.7V ≤ VIN ≤ 6 V | 1800 | 2250 | 2700 | mA |
TSD | Thermal shutdown | Increasing junction temperature | 150 | °C | ||
Thermal shutdown hysteresis | Decreasing junction temperature | 10 | °C | |||
OSCILLATOR | ||||||
fSW | Oscillator frequency | 2.7 V ≤ VIN ≤ 6 V | 2.6 | 3 | 3.4 | MHz |
OUTPUT | ||||||
Vref | Reference voltage | 600 | mV | |||
VFB(PWM) | Feedback voltage PWM mode | PWM operation, MODE = VIN , 2.7 V ≤ VIN ≤ 6 V, 0 mA load |
–1.5% | 0% | 1.5% | |
VFB(PFM) | Feedback voltage PFM mode, voltage positioning | device in PFM mode, voltage positioning active(1) | 1% | |||
VFB | Load regulation | –0.5 | %/A | |||
Line regulation | 0 | %/V | ||||
R(Discharge) | Internal discharge resistor | Activated with EN = GND, 2 V ≤ VIN≤ 6 V, 0.8 ≤ VOUT ≤ 3.6 V | 75 | 200 | 1450 | Ω |
tSTART | Start-up time | Time from active EN to reach 95% of VOUT | 500 | μs |
PACKAGE | RθJA | POWER RATING TA = ≤ 25°C |
DERATING FACTOR ABOVE TA = 25°C |
|
---|---|---|---|---|
DSG | 75°C/W | 1300 mW | 13 mW/°C |