SUPPLY |
ISD |
Shutdown current into VIN |
EN1 = EN2/PWM = GND, CTRL GND, BM = GND, |
|
0.1 |
1850 |
nA |
VTH_ UVLO+ |
Undervoltage lockout threshold |
Rising VIN |
|
2.1 |
2.22 |
V |
VTH_UVLO- |
Falling VIN |
|
1.9 |
2 |
INPUTS EN1, EN2/PWM, BM, CTRL,VSEL 1-3 |
VIH TH |
High level input threshold |
|
|
1.2 |
V |
VIL TH |
Low level input threshold |
|
0.4 |
|
V |
IIN |
Input bias Current |
TJ = 25°C |
|
10 |
nA |
TJ = –40°C to 85°C |
|
25 |
STEP-DOWN CONVERTER |
IQ |
Operating quiescent current |
EN1 = VIN, EN2/PWM = GND, CTRL = GND, IOUT = 0µA, VOUT = 1.8V, device not switching, |
|
370 |
1850 |
nA |
EN1 = VIN, EN2/PWM = GND, IOUT = 0mA, CTRL = GND, VOUT = 1.8V , device switching |
|
500 |
|
VVOUT |
Output voltage range |
|
1.0 |
|
3.0 |
V |
Output voltage accuracy |
PFM mode |
-2.5 |
0 |
2.5 |
% |
PWM mode |
-2 |
0 |
2 |
|
DC output voltage load regulation |
VOUT = 1.8V |
|
0.001 |
|
%/mA |
DC output voltage line regulation |
VOUT = 1.8V, IOUT = 10 mA, 2.5V ≤ VIN ≤ 5.5V |
|
0 |
|
%/V |
RDS(ON) |
High side MOSFET on-resistance |
IOUT = 50mA |
|
0.45 |
|
Ω |
Low Side MOSFET on-resistance |
|
0.22 |
|
ILIMF |
High side MOSFET switch current limit |
|
480 |
600 |
720 |
mA |
Low side MOSFET switch current limit |
|
600 |
|
mA |
RDSCH_VO1 |
Discharge switch on-resistance |
EN = GND, IVO1 = -10mA into VO1 pin |
|
20 |
65 |
Ω |
IIN_VO1 |
Bias current into VO1 pin |
EN = VIN, VOUT = 1.8V |
TJ = 25°C |
|
40 |
100 |
nA |
TJ = –40°C to 85°C |
|
1010 |
VTH_100+ |
Auto 100% Mode leave detection threshold (1) |
Rising VIN,100% Mode is left with VIN = VOUT + VTH_100+ , max value at TJ = 85°C |
150 |
250 |
370 |
mV |
VTH_100- |
Auto 100% Mode enter detection threshold (1) |
Falling VIN, 100% Mode is entered with VIN = VOUT + VTH_100-, max value at TJ = 85°C |
85 |
200 |
310 |
tONmin |
Minimum ON time |
VOUT = 2.0V, IOUT = 0 mA |
|
225 |
|
ns |
tOFFmin |
Minimum OFF time |
|
|
50 |
|
ns |
tStartup_delay |
Regulator start up delay time |
From transition EN1 = low to high until device starts switching |
|
1 |
5 |
ms |
tSoftstart |
Softstart time with reduced switch current limit |
|
|
700 |
1200 |
µs |
ILIM_softstart |
High side MOSFET switch current limit |
Reduced switch current limit during softstart |
80 |
150 |
200 |
mA |
Low side MOSFET switch current limit |
|
150 |
|
LOAD SWITCH |
|
|
RLOAD |
MOSFET on-resistance |
ILOAD = 50mA, CTRL = VIN, VOUT = 1.8V, |
|
0.6 |
1.27 |
Ω |
trise_LOAD |
VLOAD rise time |
Starting with CTRL low to high transition, time to ramp VLOAD from 95%, VOUT = 1.8V, ILOAD = 20mA |
|
315 |
800 |
μs |
RDCHRG |
MOSFET on-resistance |
|
|
20 |
65 |
Ω |
STEP-UP CONVERTER |
|
|
|
|
|
IQ_VIN |
Quiescent current into VIN pin |
EN2/PWM = VIN, BM = GND, EN1 = GND, no load, no switching, VOUT = 12 V |
|
110 |
200 |
µA |
VOUT |
Output voltage range |
EN2/PWM = VIN, BM = GND |
4.5 |
|
15 |
V |
VOUT_12V |
12-V output voltage accuracy |
FB pin connected to VIN pin, EN2/PWM = VIN, BM = GND |
11.7 |
12 |
12.3 |
V |
VFB |
Feedback voltage |
PWM mode, BM = GND, EN2/PWM = VIN |
0.775 |
0.795 |
0.814 |
V |
PFM mode, BM = GND, EN2/PWM = VIN |
|
0.803 |
|
V |
Feedback regulation voltage under brightness control |
EN2/PWM = VIN, BM = VIN, |
189 |
200 |
206 |
mV |
VFB =50mV, BM = VIN, D(PWM) @ EN2/PWM = 25%, |
40 |
50 |
60 |
mV |
VFB = 20mV, BM = VIN, D(PWM) @ EN2/PWM = 10% |
13 |
20 |
27 |
tDim_Off |
Dimming signal on pin EN2/PWM |
|
|
270 |
160 |
μs |
tDim_On |
|
1 |
|
|
μs |
VOVP |
Output overvoltage protection threshold |
|
17 |
17.7 |
18.4 |
V |
VOVP_HYS |
Over voltage protection hysteresis |
|
|
800 |
|
mV |
IFB_LKG |
Leakage current into FB pin |
|
|
5 |
200 |
nA |
ISW_LKG |
Leakage current into SW pin |
EN2/PWM = GND |
|
5 |
500 |
nA |
RDS(on) |
Isolation MOSFET on resistance |
VOUT = 12 V |
|
850 |
|
mΩ |
Low-side MOSFET on resistance |
VOUT = 12 V |
|
450 |
|
fSW |
Switching frequency |
VOUT = 12 V, PWM mode |
850 |
1050 |
1250 |
kHz |
tON_min |
Minimal switch on time |
|
|
150 |
250 |
ns |
ILIM_SW |
Peak switch current limit |
VOUT = 12 V |
730 |
970 |
1230 |
mA |
ILIM_CHG |
Pre-charge current |
VOUT = 0 V |
|
30 |
55 |
mA |
tSoftstart |
Pre-charge time |
BM = GND, EN2/PWM from low to high until device starts switching, IOUT2 = 0mA, COUT2 = 10uF |
|
6 |
|
ms |
Startup time |
VOUT from VIN to 12 V, COUT_effective = 2.2 µF, IOUT = 0 A |
|
6 |
|