SLVSD52A October   2015  – January 2016 TPS63020-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Typical Application Schematic
  5. 5 Revision History
  6. 6 Device Comparison Table
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Dynamic Voltage Positioning
      2. 9.3.2 Dynamic Current Limit
        1. 9.3.2.1 Device Enable
        2. 9.3.2.2 Power Good
        3. 9.3.2.3 Overvoltage Protection
        4. 9.3.2.4 Undervoltage Lockout
        5. 9.3.2.5 Overtemperature Protection
    4. 9.4 Device Functional Modes
      1. 9.4.1 Softstart and Short Circuit Protection
      2. 9.4.2 Buck-Boost Operation
      3. 9.4.3 Control Loop
      4. 9.4.4 Power Save Mode and Synchronization
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inductor Selection
        2. 10.2.2.2 Capacitor Selection
          1. 10.2.2.2.1 Input Capacitor
          2. 10.2.2.2.2 Output Capacitor
          3. 10.2.2.2.3 Bypass Capacitor
        3. 10.2.2.3 Setting the Output Voltage
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 2-A Load Current
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Third-Party Products Disclaimer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8 Specifications

8.1 Absolute Maximum Ratings

Over operating junction temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage (2) VIN, VINA, L1, L2, VOUT, PS/SYNC, EN, FB, PG –0.3 7 V
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to network ground terminal.

8.2 ESD Ratings

Value UNIT
V(ESD) Electrostatic discharge(1) Human body model (HBM), per AEC Q100-002(2) ±1000 V
Charged device model (CDM), per AEC Q100-011 ±500
(1) Electrostatic discharge (ESD) measures device sensitivity and immunity to damage caused by assembly line electrostatic discharges
(2) JAEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification

8.3 Recommended Operating Conditions

Over operating junction temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage at VIN, VINA 1.8 5.5 V
Operating junction temperature range, TJ –40 125 °C

8.4 Thermal Information

THERMAL METRIC(1) TPS63020-Q1 UNIT
DSJ (VSON)
14 PINS
RθJA Junction-to-ambient thermal resistance 41.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 47 °C/W
RθJB Junction-to-board thermal resistance 17 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 16.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

8.5 Electrical Characteristics

VIN = 1.8 V to 5.5 V, TJ = –40°C to 125°C, typical values are at TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DC/DC STAGE
VIN Input voltage range 1.8 5.5 V
Minimum input voltage for startup 0°C ≤ TA ≤ 85°C 1.5 1.8 1.9 V
Minimum input voltage for startup 1.5 1.8 2.0 V
VOUT TPS63020 output voltage range 1.2 5.5 V
Duty cycle in step down conversion 20%
VFB TPS63020 feedback voltage PS/SYNC = VIN 495 500 505 mV
VFB TPS63020 feedback voltage PS/SYNC = GND referenced to 500 mV 0.6% 5%
Maximum line regulation 0.5%
Maximum load regulation 0.5%
f Oscillator frequency 2200 2400 2600 kHz
Frequency range for synchronization 2.0 V ≤ VIN ≤ 5.5 V 2200 2400 2600 kHz
ISW Average switch current limit VIN = VINA = 3.6 V, TJ = 25°C 3500 4000 4500 mA
High side switch on resistance VIN = VINA = 3.6 V 50 mΩ
Low side switch on resistance VIN = VINA = 3.6 V 50 mΩ
Iq Quiescent current VIN and VINA IO = 0 mA, VEN = VIN = VINA = 3.6 V,
VOUT = 3.3 V, -40°C ≤ TJ ≤ 85°C		 25 50 μA
VOUT 5 10 μA
IS Shutdown current VEN = 0 V, VIN = VINA = 3.6 V, –40°C ≤ TJ ≤ 85°C 0.1 1 μA
CONTROL STAGE
UVLO Under voltage lockout threshold VINA voltage decreasing 1.4 1.5 1.6 V
Under voltage lockout hysteresis 200 mV
VIL EN, PS/SYNC input low voltage 0.4 V
VIH EN, PS/SYNC input high voltage 1.2 V
EN, PS/SYNC input current Clamped to GND or VINA 0.01 0.2 μA
PG output low voltage VOUT = 3.3 V, IPGL = 10 μA 0.04 0.4 V
PG output leakage current 0.01 0.1 μA
Output overvoltage protection 5.5 7 V
Overtemperature protection 140 °C
Overtemperature hysteresis 20 °C

8.6 Typical Characteristics

TPS63020-Q1 D001_SLVSD52.gif
Figure 1. Output Current vs Input Voltage at TJ= 125 °C