SUPPLY CURRENT AND THERMAL PROTECTION |
VI |
Input voltage |
|
2.9 |
|
5 |
V |
|
Shut down supply current |
EN = GND I(IN) = I(AVIN) + I(PVIN) + I(SWP) |
|
0.1 |
15 |
μA |
|
Undervoltage lockout threshold |
VI falling |
|
|
2.1 |
V |
|
Undervoltage lockout threshold |
VI rising |
|
|
2.5 |
V |
|
Thermal shutdown temperature |
|
|
135 |
|
°C |
LOGIC SIGNALS (EN) |
|
High-level input voltage |
|
1.2 |
|
|
V |
|
Low-level input voltage |
|
|
|
0.4 |
V |
BOOST CONVERTER (VPOS) |
VPOS |
Output voltage |
|
4.95 |
5 |
5.05 |
V |
|
Low-side MOSFET on-state resistance |
I(SWP) = 200 mA |
|
250 |
|
mΩ |
|
High-side MOSFET on-state resistance |
I(SWP) = –200 mA |
|
350 |
|
|
High-side MOSFET current limit |
Inductor valley current |
0.8 |
1.1 |
|
A |
V(SCP)(P) |
Short-circuit threshold in operation |
VPOS falling |
|
4.1 |
|
V |
|
Active discharge resistance |
EN = GND; I(VPOS) = 1 mA |
15 |
30 |
60 |
Ω |
|
Line regulation |
IPOS = 100 mA |
|
0.02 |
|
%/V |
|
Load regulation |
|
|
0.24 |
|
%/A |
BUCK-BOOST CONVERTER (VNEG) |
VNEG |
Negative output voltage default |
|
–5.05 |
–5 |
–4.95 |
V |
|
High-side MOSFET on-state resistance |
I(SWN) = –200 mA |
|
250 |
|
mΩ |
|
Low-side MOSFET on-state resistance |
I(SWN) = 200 mA |
|
350 |
|
|
Low-side MOSFET current limit |
Inductor valley current |
1.5 |
2.2 |
|
A |
V(SCP)(N) |
Short-circuit threshold in operation |
|
|
–4.5 |
|
V |
|
Active discharge resistance |
EN = GND; I(VNEG) = –1 mA |
100 |
150 |
200 |
Ω |
|
Line regulation |
INEG = –100 mA |
|
0.01 |
|
%/V |
|
Load regulation |
|
|
0.16 |
|
%/A |