4 Revision History
Changes from H Revision (January 2015) to I Revision
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Added TI Design Go
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Changed PMOSFET to PMOS in Description section Go
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Added footnote to the Recommended Operating Conditions tableGo
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Changed VFB parameter in Electrical Characteristics table Go
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Changed units of Vn parameter in Electrical Characteristics tableGo
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Deleted UVLO parameter minimum specification from Electrical Characteristics tableGo
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Changed TA to TJ in x-axis of Figure 7, Figure 10, and Figure 11 Go
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Changed second paragraph of Startup and Noise Reduction Capacitor sectionGo
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Changed last bullet in Normal Operation section Go
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Changed value of the TJ column in last row of Table 1 Go
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Added last sentence to Input and Output Capacitor Requirements sectionGo
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Changed VREF to VFB in Equation 3 Go
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Changed definition of z in Table 4 Go
Changes from G Revision (April 2009) to H Revision
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Changed pin descriptions throughout Pin Functions tableGo
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Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
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Changed load regulation typical specification from 120 µV to 70 µV to better reflect device performance Go
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Changed condition for CNR = none for Vn parameterGo
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Changed Figure 1, Figure 2, Figure 3, and Figure 4: removed legend, added call-outs for clarityGo
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Changed titles of Figure 15, Figure 17, and Figure 25Go
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Corrected input and output symbols in operational amplifiers in Functional Block Diagrams Go
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Changed Undervoltage Lockout (UVLO) section text: reworded for clarityGo
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Deleted Reverse Current Protection section Go
Changes from F Revision (February 2009) to G Revision
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Changed min and max specs for Output accuracy, VOUT ≥ 1.0VGo