SLVSAJ4C September 2010 – October 2017
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage range, VIN | –11 | 0.3 | V | |
Noise reduction pin voltage range, VNR | –11 | 5.5 | V | |
Enable voltage range, VEN | –VIN | 5.5 | V | |
Output current, IOUT | Internally limited | |||
Output short-circuit duration | Indefinite | |||
Continuous total power dissipation, PD | See the Power Dissipation Ratings table | |||
Latch-up performance meets 100 mA per AEC-Q100 | Class I | 100 | mA | ||
Junction temperature range, TJ | –55 | 150 | °C | |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±500 | |||
Machine model | ±200 |
BOARD | PACKAGE | RθJC | RθJA | DERATING FACTOR ABOVE TA = 25°C |
TA ≤ 25°C POWER RATING |
TA = 70°C POWER RATING |
TA = 85°C POWER RATING |
---|---|---|---|---|---|---|---|
Low-K(1) | DBV | 64°C/W | 255°C/W | 3.9 mW/°C | 390 mW | 215 mW | 155 mW |
High-K(2) | DBV | 64°C/W | 180°C/W | 5.6 mW/°C | 560 mW | 310 mW | 225 mW |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VIN | Input voltage range(1) | –10 | –2.7 | V | |||
VOUT | Accuracy | Nominal | TJ = 25°C | –1% | 1% | ||
TPS723xx-Q1 versus VIN / IOUT / T |
–10V ≤ VIN ≤ VOUT – 0.5V, 10 μA ≤ IOUT ≤ 200 mA |
–2% | ±1% | 2% | |||
VOUT% / VIN | Line regulation | –10 V ≤ VIN ≤ VOUT(nom) – 0.5 V | 0.04 | %/V | |||
VOUT% / IOUT | Load regulation | 0 mA ≤ IOUT ≤ 200 mA | 0.002 | %/mA | |||
VDO | Dropout voltage at VOUT = 0.96 × VOUTnom | IOUT = 200 mA | 280 | 500 | mV | ||
ICL | Current limit | VOUT = 0.85 × VOUT(nom) | 300 | 550 | 800 | mA | |
IGND | Ground pin current | IOUT = 0 mA (IQ), –10 V ≤ VIN ≤ VOUT – 0.5 V |
130 | 200 | μA | ||
IOUT = 200 mA, –10 V ≤ VIN ≤ VOUT – 0.5 V |
350 | 500 | |||||
ISHDN | Shutdown ground pin current | –0.4 V ≤ VEN ≤ 0.4 V, –10V ≤ VIN ≤ VOUT – 0.5 V |
0.1 | 2 | μA | ||
PSRR | Power-supply rejection ratio | IOUT = 200 mA, 1 kHz, CIN = COUT = 10 μF |
65 | dB | |||
IOUT = 200 mA, 10 kHz, CIN = COUT = 10 μF |
48 | ||||||
Vn | Output noise voltage | COUT = 10 μF, 10 Hz to 100 kHz, IOUT = 200 mA |
60 | μVRMS | |||
tSTR | Startup time | VOUT = –2.5 V, COUT = 1 μF, RL = 25 Ω |
1 | ms | |||
VEN(HI) | Enable threshold positive | 1.5 | V | ||||
VEN(LO) | Enable threshold negative | –1.5 | V | ||||
VDIS(HI) | Disable threshold positive | 0.4 | V | ||||
VDIS(LO) | Disable threshold negative | –0.4 | V | ||||
IEN | Enable pin current | –10 V ≤ VIN ≤ VOUT – 0.5 V, –10 V ≤ VEN ≤ ±3.5 V |
0.1 | 2 | μA | ||
TSD | Thermal shutdown temperature | Shutdown, temperature increasing | 165 | °C | |||
Reset, temperature decreasing | 145 | ||||||
TJ | Operating junction temperature | –40 | 125 | °C |