SGLS303F May 2005 – April 2016 TPS732-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
VIN | –0.3 | 6 | V |
VEN | –0.3 | 6 | V |
VOUT | –0.3 | 5.5 | V |
Peak output current | Internally limited | ||
Output short-circuit duration | Indefinite | ||
Junction temperature, TJ | –55 | 150 | °C |
Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1000 | |||
Machine model (MM) | ±200 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Input voltage(1) | 1.7 | 5.5 | V |
IOUT | Output current | 0 | 250 | mA |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS732-Q1 | UNIT | ||
---|---|---|---|---|
DBV (SOT-23) | DRB (VSON) | |||
5 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 180 | 47.8 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 64 | 83 | °C/W |
RθJB | Junction-to-board thermal resistance | 35 | — | °C/W |
ψJT | Junction-to-top characterization parameter | — | 2.1 | °C/W |
ψJB | Junction-to-board characterization parameter | — | 17.8 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | 12.1 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VFB | Internal reference (TPS73201-Q1) | TJ = 25°C | 1.198 | 1.2 | 1.21 | V | |
VOUT | Output voltage range (TPS73201-Q1)(2) | VFB | 5.5 – VDO | V | |||
Accuracy(1) | Nominal | TJ = 25°C | –0.5% | 0.5% | |||
VIN, IOUT, and TJ | (VOUT + 0.5 V) ≤ VIN ≤ 5.5 V, 10 mA ≤ IOUT ≤ 250 mA |
–1% | ±0.5% | 1% | |||
ΔVOUT%/ΔVIN | Line regulation(1) | (VOUT(nom) + 0.5 V) ≤ VIN ≤ 5.5 V | 0.06 | %/V | |||
ΔVOUT%/ΔIOUT | Load regulation | 1 mA ≤ IOUT ≤ 250 mA | 0.002 | %/mA | |||
10 mA ≤ IOUT ≤ 250 mA | 0.0008 | ||||||
VDO | Dropout voltage
(VIN = VOUT (nom) – 0.1 V) |
IOUT = 250 mA | 40 | 150 | mV | ||
ZO(DO) | Output impedance in dropout | 1.7 V ≤ VIN ≤ (VOUT + VDO) | 0.25 | Ω | |||
ICL | Output current limit | VOUT = 0.9 × VOUT(nom) | 250 | 425 | 600 | mA | |
ISC | Short-circuit current | VOUT = 0 V | 300 | mA | |||
IREV | Reverse leakage current(3) (–IIN) | VEN ≤ 0.5 V, 0 V ≤ VIN ≤ VOUT | 0.1 | 10 | μA | ||
IGND | Ground pin current | IOUT = 10 mA (IQ) | 400 | 550 | μA | ||
IOUT = 250 mA | 650 | 950 | |||||
ISHDN | Shutdown current (IGND) | VEN ≤ 0.5 V, VOUT ≤ VIN ≤ 5.5 | 0.02 | 1 | μA | ||
PSRR | Power-supply rejection ratio (ripple rejection) |
f = 100 Hz, IOUT = 250 mA | 58 | dB | |||
f = 10 kHz, IOUT = 250 mA | 37 | ||||||
VN | Output noise voltage BW = 10 Hz – 100 kHz |
COUT = 10 μF, No CNR | 27 × VOUT | μVRMS | |||
COUT = 10 μF, CNR = 0.01 μF | 8.5 × VOUT | ||||||
VEN(HI) | Enable high (enabled) | 1.7 | VIN | V | |||
VEN(LO) | Enable low (shutdown) | 0 | 0.5 | V | |||
IEN(HI) | Enable pin current (enabled) | VEN = 5.5 V | 0.02 | 0.1 | μA | ||
TSD | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | |||
Reset, temperature decreasing | 140 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tSTR | Start-Up time | VOUT = 3 V, RL = 30 Ω COUT = 1 μF, CNR = 0.01 μF | 600 | μs |