SGLS247 Data sheet

SGLS247B September 2011 – March 2016 TPS763-Q1

PRODUCTION DATA.

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）

DBV|5

サーマルパッド・メカニカル・データ

発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Input voltage	–0.3	10	V
Voltage at EN			V
Voltage on OUT, FB			V
Peak output current	Internally limited
Operating junction temperature, T_J	–40	150	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	±500	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

	MIN	MAX	UNIT
Input voltage, V_I	2.7	10	V
Continuous output current, I_O	0	150	mA
Operating junction temperature, T_J	–40	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS763xx-Q1	UNIT
		DBV (SOT-23)
		5 PINS
R_θJA	Junction-to-ambient thermal resistance	205.2	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	11.83	°C/W
R_θJB	Junction-to-board thermal resistance	34.8	°C/W
ψ_JT	Junction-to-top characterization parameter	12.2	°C/W
ψ_JB	Junction-to-board characterization parameter	33.9	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	N/A	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

over operating free-air temperature range, V_I = V_O_(typ) + 1 V, I_O = 1 mA, EN = IN, C_o = 4.7 μF (unless otherwise noted)

PARAMETER			TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_O	Output voltage	TPS76301-Q1	3.25 V > VI ≥ 2.7 V, 2.5 V ≥ V_O ≥ 1.5 V, I_O = 1 mA to 75 mA, T_J = 25°C	0.98V_O	V_O	1.02V_O	V
			3.25 V > VI ≥ 2.7 V, 2.5 V ≥ V_O ≥ 1.5 V, I_O = 1 mA to 75 mA,	0.97V_O	V_O	1.03V_O
			V_I ≥ 3.25 V, 5 V ≥ V_O ≥ 1.5 V, I_O = 1 mA to 100 mA, T_J = 25°C	0.98V_O	V_O	1.02V_O
			V_I ≥ 3.25 V, 5 V ≥ V_O ≥ 1.5 V, I_O = 1 mA to 100 mA,	0.97V_O	V_O	1.03V_O
			V_I ≥ 3.25 V, 5 V ≥ V_O ≥ 1.5 V, I_O = 1 mA to 150 mA, T_J = 25°C	0.975V_O	V_O	1.025V_O
			V_I ≥ 3.25 V, 5 V ≥ V_O ≥ 1.5 V, I_O = 1 mA to 150 mA,	0.9625V_O	V_O	1.0375V_O
		TPS76316-Q1	V_I = 2.7 V, 1 mA < I_O < 75 mA, T_J = 25°C	1.568	1.6	1.632	V
			V_I = 2.7 V, 1 mA < I_O < 75 mA, T_J = 25°C	1.552	1.6	1.648
			V_I = 3.25 V, 1 mA < I_O < 100 mA, T_J = 25°C	1.568	1.6	1.632
			V_I = 3.25 V, 1 mA < I_O < 100 mA, T_J = 25°C	1.552	1.6	1.648
			V_I = 3.25 V, 1 mA < I_O < 150 mA, T_J = 25°C	1.56	1.6	1.64
			V_I 3.25 V, 1 mA < I_O < 150 mA, T_J = 25°C	1.536	1.6	1.664
		TPS76318-Q1	V_I = 2.7 V, 1 mA < I_O < 75 mA, T_J = 25°C	1.764	1.8	1.836	V
			V_I = 2.7 V, 1 mA < I_O < 75 mA	1.746	1.8	1.854
			V_I = 3.25 V, 1 mA < I_O < 100 mA, T_J = 25°C	1.764	1.8	1.836
			V_I = 3.25 V, 1 mA < I_O < 100 mA	1.746	1.8	1.854
			V_I = 3.25 V, 1 mA < I_O < 150 mA, T_J = 25°C	1.755	1.8	1.845
			V_I = 3.25 V, 1 mA < I_O < 150 mA	1.733	1.8	1.867
		TPS76325-Q1	I_O = 1 mA to 100 mA, T_J = 25°C	2.45	2.5	2.55	V
			I_O = 1 mA to 100 mA	2.425	2.5	2.575
			I_O = 1 mA to 150 mA,, T_J = 25°C	2.438	2.5	2.562
			I_O = 1 mA to 150 mA	2.407	2.5	2.593
		TPS76330-Q1	I_O = 1 mA to 100 mA, T_J = 25°C	2.94	3	3.06	V
			I_O = 1 mA to 100 mA	2.91	3	3.09
			I_O = 1 mA to 150 mA, T_J = 25°C	2.925	3	3.075
			I_O = 1 mA to 150 mA	2.888	3	3.112
		TPS76333-Q1	I_O = 1 mA to 100 mA, T_J = 25°C	3.234	3.3	3.366	V
			I_O = 1 mA to 100 mA	3.201	3.3	3.399
			I_O = 1 mA to 150 mA, T_J = 25°C	3.218	3.3	3.382
			I_O = 1 mA to 150 mA	3.177	3.3	3.423
		TPS76350-Q1	I_O = 1 mA to 100 mA, T_J = 25°C	4.875	5	5.125	V
			I_O = 1 mA to 100 mA	4.825	5	5.175
			I_O = 1 mA to 150 mA, T_J = 25°C	4.750	5	5.15
			I_O = 1 mA to 150 mA	4.80	5	5.2
I_(Q)	Quiescent current (GND) terminal current)		I_O = 0 mA to 150 mA, T_J = 25°C⁽¹⁾		85	100	µA
I_(Q)	Quiescent current (GND) terminal current)		I_O = 0 mA to 150 mA, see			140	µA
	Standby current		EN < 0.5 V, T_J = 25°C		0.5	1	µA
	Standby current		EN < 0.5 V			2	µA
Vn	Output noise voltage		BW = 300 Hz to 50 kHz, Co = 10 μF, T_J = 25°C⁽²⁾		140		µV
PSRR	Ripple rejection		f = 1 kHz, Co = 10 μF, T_J = 25°C⁽²⁾		60		dB
	Current limit		T_J = 25°C, see⁽³⁾	0.5	0.8	1.5	A
	Output voltage line regulation (ΔVO/VO), (see ⁽³⁾))		V_O + 1 V < V_I ≤ 10 V, V_I ≥ 3.5 V, T_J = 25°C		0.04	0.07	%/V
	Output voltage line regulation (ΔVO/VO), (see ⁽³⁾))		V_O + 1 V < V_I ≤ 10 V, V_I ≥ 3.5 V			0.1	%/V
V_IH	EN high level input		See⁽²⁾		1.4	2	V
V_IL	EN low level input		See⁽²⁾	0.5	1.2		V
I_I	EN input current		EN = 0 V		–0.01	–0.5	µa
I_I	EN input current		EN = IN		–0.01	–0.5	µa
V_DO	Dropout voltage	TPS76325-Q1	I_O = 0 mA, T_J = 25°C		0.2		mV
			I_O = 1 mA, T_J = 25°C		3
			I_O = 50 mA, T_J = 25°C		120	150
			I_O = 50 mA			200
			I_O = 75 mA, T_J = 25°C		180	225
			I_O = 75 mA			300
			I_O = 100 mA, T_J = 25°C		240	300
			I_O = 100 mA			400
			I_O = 150 mA, T_J = 25°C		360	450
			I_O = 150 mA			600
		TPS76333-Q1	I_O = 0 mA, T_J = 25°C		0.2		mV
			I_O = 1 mA, T_J = 25°C		3
			I_O = 50 mA, T_J = 25°C		100	125
			I_O = 50 mA			166
			I_O = 75 mA, T_J = 25°C		150	188
			I_O = 75 mA			250
			I_O = 100 mA, T_J = 25°C		200	250
			I_O = 100 mA			333
			I_O = 150 mA, T_J = 25°C		300	375
			I_O = 150 mA			500
		TPS76350-Q1	I_O = 0 mA, T_J = 25°C		0.2		mV
			I_O = 1 mA, T_J = 25°C		2
			I_O = 50 mA, T_J = 25°C		60	75
			I_O = 50 mA			100
			I_O = 75 mA, T_J = 25°C		90	113
			I_O = 75 mA			150
			I_O = 100 mA, T_J = 25°C		120	150
			I_O = 100 mA			200
			I_O = 150 mA, T_J = 25°C		180	225
			I_O = 150 mA			300