SBVS191B April 2012 – August 2014
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage(2) | IN | –0.3 | 7.0 | V |
EN | –0.3 | VIN + 0.3 | V | |
OUT | –0.3 | VIN + 0.3 | V | |
Current | OUT | Internally limited | mA | |
Temperature | Operating virtual junction, TJ | –55 | 150 | °C |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Tstg | Storage temperature range | –55 | 150 | °C | |
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | –2000 | 2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | –500 | 500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIN | Input voltage | 2.7 | 6.5 | V | |
IOUT | Output current | 0.5 | 200 | mA | |
TJ | Operating junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS799Lxx | UNIT | |
---|---|---|---|
YZY (DSBGA) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 143.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 1.1 | |
RθJB | Junction-to-board thermal resistance | 84.7 | |
ψJT | Junction-to-top characterization parameter | 3.8 | |
ψJB | Junction-to-board characterization parameter | 84.4 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VIN | Input voltage range(1) | 2.7 | 6.5 | V | |||
VOUT | Output voltage range | 5.2 | 6.2 | V | |||
Output accuracy, nominal | TJ = 25°C | –1.0% | 1.0% | ||||
Output accuracy(1)
Over VIN, IOUT, temperature |
VOUT + 0.3 V ≤ VIN ≤ 6.5 V 500 μA ≤ IOUT ≤ 200 mA |
–2.0% | ±1.0% | 2.0% | |||
ΔVO(ΔVI) | Line regulation(1) | VOUT(NOM) + 0.3 V ≤ VIN ≤ 6.5 V | 0.02 | %/V | |||
ΔVO(ΔIO) | Load regulation | 500 μA ≤ IOUT ≤ 200 mA | 0.002 | %/mA | |||
VDO | Dropout voltage (VIN = VOUT(NOM) – 0.1 V) |
VOUT ≥ 3.3 V, IOUT = 200 mA | 90 | 160 | mV | ||
ILIM | Output current limit(2) | VOUT = 0.9 × VOUT(NOM) | 220 | 340 | 600 | mA | |
IGND | Ground pin current | 500 μA ≤ IOUT ≤ 200 mA | 40 | 60 | μA | ||
ISHDN | Shutdown current (IGND) | VEN ≤ 0.4 V, 2.7 V ≤ VIN ≤ 6.5 V | 0.15 | 1.0 | μA | ||
PSRR | Power-supply rejection ratio | VIN = 6.5 V, VOUT = 2.85 V, CNR = 0.01 μF, IOUT = 100 mA |
f = 100 Hz | 70 | dB | ||
f = 1 kHz | 66 | dB | |||||
f = 10 kHz | 51 | dB | |||||
f = 100 kHz | 38 | dB | |||||
VN | Output noise voltage | BW = 10 Hz to 100 kHz | CNR = 0.01 μF | 10.5 × VOUT | μVRMS | ||
CNR = none | 94 × VOUT | μVRMS | |||||
Start-up time | VOUT = 5.7 V, RL = 28 Ω, COUT = 2.2 μF |
CNR = 0.01 μF | 90 | μs | |||
CNR = none | 95 | μs | |||||
VEN(HI) | Enable high (enabled) | 1.2 | VIN | V | |||
VEN(LO) | Enable low (shutdown) | 0 | 0.4 | V | |||
IEN(HI) | Enable pin current, enabled | VEN = VIN = 6.5 V | 0.03 | 1.0 | μA | ||
Tsd | Thermal shutdown temperature | Shutdown, temperature increasing | 165 | °C | |||
Reset, temperature decreasing | 145 | °C | |||||
TJ | Operating junction temperature | –40 | 125 | °C | |||
UVLO | Undervoltage lockout | VIN rising | 1.90 | 2.20 | 2.65 | V | |
Hysteresis | VIN falling | 70 | mV |
VIN = 6.5 V |
VIN = 6.2 V | ||
VIN = 6.5 V |
VIN = 5.95 V |
VIN = 6 V |
TPS799Axx | ||
IOUT = 250 mA |
VIN = 6.5 V |
VIN = 6.5 V | ||
VIN = 5.95 V |
VIN = 6.2 V |
VIN = 6 V |
CIN = COUT = 20 µF | IOUT = 47 mA | |