SBVS281A March 2016 – July 2016 TPS7A87
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | INx, PGx, ENx(3) | –0.3 | 7.0 | V |
INx, PGx, ENx (5% duty cycle, pulse duration = 200 µs) | –0.3 | 7.5 | ||
OUTx | –0.3 | VINx + 0.3(2) | ||
SS_CTRLx | –0.3 | VINx + 0.3(2) | ||
NR/SSx, FBx(3) | –0.3 | 3.6 | ||
Current | OUTx(3) | Internally limited | A | |
PGx (sink current into device)(3) | 5 | mA | ||
Temperature | Operating junction, TJ | –55 | 150 | °C |
Storage, Tstg | –55 | 150 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VINx | Input supply voltage range | 1.4 | 6.5 | V |
VOUTx | Output voltage range | 0.8 – 1% | 5.2 + 1% | V |
IOUTx | Output current | 0 | 500 | mA |
CINx | Input capacitor, each input | 10 | µF | |
COUTx | Output capacitor | 10 | µF | |
CNR/SSx | Noise-reduction capacitor | 1 | µF | |
RPGx | Power-good pullup resistance | 10 | 100 | kΩ |
TJ | Junction temperature range | –40 | 125 | °C |
THERMAL METRIC(1) | TPS7A87 | UNIT | |
---|---|---|---|
RTJ (WQFN) | |||
20 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 33 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 26.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 8.0 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 8.0 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VINx(2) | Input supply voltage range | 1.4 | 6.5 | V | ||
VREF | Reference voltage | 0.8 | V | |||
VUVLOx | Input supply UVLOx | VINx rising | 1.31 | 1.39 | V | |
VUVLOx(HYS) | VUVLOx hysteresis | VINx falling hysteresis | 290 | mV | ||
VOUTx | Output voltage range | 0.8 – 1% | 5.2 + 1% | V | ||
VOUTx accuracy(1) | 0.8 V ≤ VOUTx ≤ 5.2 V, 5 mA ≤ IOUTx ≤ 0.5 A | –1.0% | 1.0% | |||
ΔVOUTx(ΔVINx) | Line regulation | IOUTx = 5 mA, 1.4 V ≤ VINx ≤ 6.5 V | 0.003 | %/V | ||
ΔVOUTx(ΔIOUTx) | Load regulation | 5 mA ≤ IOUTx ≤ 0.5 A | 0.03 | %/A | ||
VDO | Dropout voltage | 1.4 V ≤ VINx ≤ 5.3 V IOUTx = 0.5 A, VFBx = 0.8 V – 3% |
100 | mV | ||
ILIM | Output current limit | VOUTx forced at 0.9 × VOUTx(TARGET), | 0.8 | 1.1 | 1.5 | A |
IGND | GND pin current | Both channels enabled, per channel, VINx = 6.5 V, IOUTx = 5 mA |
2.1 | 3.5 | mA | |
Both channels enabled, per channel, VINx = 1.4 V, IOUTx = 0.5 A |
4 | |||||
ISDN | Shutdown GND pin current | Both channels shutdown, per channel, PGx = (open), VINx = 6.5 V, VENx = 0.4 V |
0.1 | 15 | μA | |
IENx | ENx pin current | VINx = 6.5 V, 0 V ≤ VENx ≤ 6.5 V | –0.2 | 0.2 | μA | |
VIL(ENx) | ENx pin low-level input voltage (device disabled) | 0 | 0.4 | V | ||
VIH(ENx) | ENx pin high-level input voltage (device enabled) | 1.1 | 6.5 | V | ||
ISS_CTRLx | SS_CTRLx pin current | VINx = 6.5 V, 0 V ≤ VSS_CTRLx ≤ 6.5 V | –0.2 | 0.2 | μA | |
VIT(PGx) | PGx pin threshold | For PGx transitioning low with falling VOUTx, expressed as a percentage of VOUTx(TARGET) | 82% | 88.9% | 93% | |
Vhys(PGx) | PGx pin hysteresis | For PGx transitioning high with rising VOUTx, expressed as a percentage of VOUTx(TARGET) | 1% | |||
VOL(PGx) | PGx pin low-level output voltage | VOUTx < VIT(PGx), IPGx = –1 mA (current into device) | 0.4 | V | ||
Ilkg(PGx) | PGx pin leakage current | VOUTx > VIT(PGx), VPGx = 6.5 V | 1 | µA | ||
INR/SSx | NR/SSx pin charging current | VNR/SSx = GND, 1.4 V ≤ VINx ≤ 6.5 V, VSS_CTRLx = GND |
4.0 | 6.2 | 9.0 | µA |
VNR/SSx = GND, 1.4 V ≤ VINx ≤ 6.5 V, VSS_CTRLx = VINx | 65 | 100 | 150 | |||
IFBx | FBx pin leakage current | VINx = 6.5 V, VFBx = 0.8 V | –100 | 100 | nA | |
PSRR | Power-supply rejection ratio | f = 500 kHz, VINx = 3.8 V, VOUTx = 3.3 V, IOUTx = 250 mA, CNR/SSx = 10 nF, CFFx = 10 nF |
40 | dB | ||
Vn | Output noise voltage | BW = 10 Hz to 100 kHz, VINx = 1.8 V, VOUTx = 0.8 V, IOUTx = 0.5 A, CNR/SSx = 1 µF, CFFx = 100 nF |
3.8 | μVRMS | ||
Noise spectral density | f = 10 kHz, VINx = 1.8 V, VOUTx = 0.8 V, IOUTx = 0.5 A, CNR/SSx = 10 nF, CFFx = 10 nF |
11 | nV/√Hz | |||
Rdiss | Output active discharge resistance | VENx = GND | 250 | Ω | ||
Tsdx | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | ||
Reset, temperature decreasing | 140 |
IOUTx = 500 mA, VINx = 5.3 V | ||
VOUTx = 1.2 V, IOUTx = 500 mA, COUTx = 10 µF, CNR/SSx = CFFx = 10 nF |
VOUTx = 5.0 V, VINx = 5.3 V, VENx = 1.7 V, IOUTx = 500 mA, COUTx = ceramic, CFFx = 10 nF |
IOUTx = 500 mA |
VINx = VOUTx + 1.0 V, IOUTx = 500 mA, VRMS BW = 10 Hz to 100 kHz, COUTx = 10 µF, CNR/SSx = CFFx = 10 nF |
VINx = 3.8 V, VOUTx = 3.3 V, IOUTx = 500 mA, VRMS BW = 10 Hz to 100 kHz, COUTx = 10 µF, CNR/SSx = 10 nF |
VOUTx = 1.8 V, IOUTx = 500 mA, VRMS BW = 10 Hz to 100 kHz, CFFx = 0.01 µF |
VOUTx = 1.8 V, IOUTx = 500 mA, CNR/SSx = 1 µF, BW = 10 Hz to 100 kHz |
VINx = 5.3 V, COUTx = 10 µF, CFFx = CNR/SSx = 10 nF | ||
VINx = 3.4 V, VOUTx = 3.3 V, 125°C curve truncated because of device entering thermal shutdown |
VINx = 1.4 V |
VINx = 1.4 V |
IOUTx = 500 mA |
IOUTx = 50 mA |
IOUTx = 5 mA |
Both channels |
Both channels enabled |
VINx = VPGx = 6.5 V |
VOUTx = 5 V, VINx = 5.3 V, VENx = 1.7 V, IOUTx = 500 mA, COUTx = 10 µF, CFFx = 10 nF |
VOUTx = 1.2 V, VINx = 1.4 V, VENx = 3.8 V, IOUTx = 500 mA, COUTx = 10 µF, CNR/SSx = CFFx = 10 nF |
VOUTx = 1.8 V, IOUTx = 100 mA, COUTx = 10 µF, CNR/SSx = CFFx = 10 nF |
IOUTx = 500 mA | ||
VINx = 1.7 V, VOUTx = 1.2 V, IOUTx = 500 mA, VRMS BW = 10 Hz to 100 kHz, COUTx = 10 µF, CFFx = 10 nF |
VOUTx = 1.2 V, IOUTx = 500 mA, COUTx = 10 µF, CNR/SSx = 10 nF | ||
VOUTx = 1.8 V, IOUTx = 500 mA, CFFx = 0.01 µF, BW = 10 Hz to 100 kHz |
VINx = VOUTx + 0.3 V, IOUTx = 10 mA to 500 mA, COUTx = 10 µF, CFFx = CNR/SSx = 10 nF |
VINx = 1.4 V to 6.5 V to 1.4 V at 2 V/µs, VOUTx = 0.8 V, IOUTx = 500 mA, CNR/SSx = CFFx = 10 nF |
VINx = 1.4 V |
VINx = 1.4 V |
VINx = 3.8 V |
VINx = 5.5 V |
VINx = 1.4 V, both channels enabled |