JAJSDI3 June 2017 TPS7A90
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | IN, PG, EN | –0.3 | 7.0 | V |
IN, PG, EN (5% duty cycle, pulse duration ≤ 200 µs) | –0.3 | 7.5 | ||
OUT | –0.3 | VIN + 0.3 | ||
SS_CTRL | –0.3 | VIN + 0.3 | ||
NR/SS, FB | –0.3 | 3.6 | ||
Current | OUT | Internally limited | A | |
PG (sink current into the device) | 5 | mA | ||
Temperature | Operating junction, TJ | –55 | 150 | °C |
Storage, Tstg | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | Input supply voltage range | 1.4 | 6.5 | V |
VOUT | Output voltage range | 0.8 | 5.7 | V |
IOUT | Output current | 0 | 0.5 | A |
CIN | Input capacitor | 10 | µF | |
COUT | Output capacitor | 10 | µF | |
CNR/SS | Noise-reduction capacitor | 0 | 10 | µF |
CFF | Feedforward capacitor | 0 | 100 | nF |
RPG | Power-good pullup resistance | 10 | 100 | kΩ |
TJ | Junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPS7A90 | UNIT | |
---|---|---|---|
DSK (SON) | |||
10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 56.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 46.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 29.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 29.4 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 3.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VIN | Input supply voltage range | 1.4 | 6.5 | V | ||
VREF | Reference voltage | 0.8 | V | |||
VUVLO | Input supply UVLO | VIN rising | 1.31 | 1.39 | V | |
VHYS(UVLO) | Input supply UVLO hysteresis | 290 | mV | |||
VOUT | Output voltage range | 0.8 | 5.7 | V | ||
Output voltage accuracy(1) | 1.4 V ≤ VIN ≤ 6.5 V, 5 mA ≤ IOUT ≤ 0.5 A | –1.0% | 1.0% | |||
ΔVOUT(ΔVIN) | Line regulation | 0.005 | %/V | |||
ΔVOUT(ΔIOUT) | Load regulation(2) | 5 mA ≤ IOUT ≤ 0.5 A | 0.02 | %/A | ||
VDO | Dropout voltage | 1.4 V ≤ VIN ≤ 5.0 V, IOUT = 0.5 A, VFB = 0.8 V – 3% | 100 | mV | ||
5.0 V < VIN ≤ 5.7 V, IOUT = 0.5 A, VFB = 0.8 V – 3% | 200 | |||||
ILIM | Output current limit | VOUT forced at 0.9 × VOUT(NOM), VIN = VOUT(NOM) + 300 mV |
0.8 | 1.1 | 1.5 | A |
IGND | GND pin current | VIN = 6.5 V, IOUT = 5 mA | 2.1 | 3.5 | mA | |
VIN = 1.4 V, IOUT = 0.5 A | 4 | |||||
ISDN | Shutdown GND pin current | PG = (open), VIN = 6.5 V, VEN = 0.4 V | 0.1 | 15 | µA | |
IEN | EN pin current | VIN = 6.5 V, 0 V ≤ VEN ≤ 6.5 V | –0.2 | 0.2 | µA | |
VIL(EN) | EN pin low-level input voltage (device disabled) | 0 | 0.4 | V | ||
VIH(EN) | EN pin high-level input voltage (device enabled) | 1.1 | 6.5 | V | ||
ISS_CTRL | SS_CTRL pin current | VIN = 6.5 V, 0 V ≤ VSS_CTRL ≤ 6.5 V | –0.2 | 0.2 | µA | |
VIT(PG) | PG pin threshold | For PG transitioning low with falling VOUT, expressed as a percentage of VOUT(NOM) | 82% | 88.9% | 93% | |
VHYS(PG) | PG pin hysteresis | For PG transitioning high with rising VOUT, expressed as a percentage of VOUT(NOM) | 1% | |||
VOL(PG) | PG pin low-level output voltage | VOUT < VIT(PG), IPG = –1 mA (current into device) | 0.4 | V | ||
ILKG(PG) | PG pin leakage current | VOUT > VIT(PG), VPG = 6.5 V | 1 | µA | ||
INR/SS | NR/SS pin charging current | VNR/SS = GND, VSS_CTRL = GND | 4.0 | 6.2 | 9.0 | µA |
VNR/SS = GND, VSS_CTRL = VIN | 65 | 100 | 150 | |||
IFB | FB pin leakage current | VIN = 6.5 V, VFB = 0.8 V | –100 | 100 | nA | |
PSRR | Power-supply ripple rejection | f = 500 kHz, VIN = 3.8 V, VOUT(NOM) = 3.3 V, IOUT = 250mA, CNR/SS = 10 nF, CFF = 10 nF |
39 | dB | ||
Vn | Output noise voltage | BW = 10 Hz to 100 kHz, VIN = 1.8 V, VOUT(NOM) = 0.8 V, IOUT = 0.5 A, CNR/SS = 10 nF, CFF = 10 nF |
4.7 | µVRMS | ||
Noise spectral density | f = 10 kHz, VIN = 1.8 V, VOUT(NOM) = 0.8 V, IOUT = 0.5 A, CNR/SS = 10 nF, CFF = 10 nF |
13 | nV/√Hz | |||
Rdiss | Output active discharge resistance | VEN = GND | 250 | Ω | ||
Tsd | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | ||
Reset, temperature decreasing | 140 |
VOUT = 0.8 V, IOUT = 500 mA, COUT = 10 µF, CNR/SS = CFF = 10 nF |
VOUT = 3.3 V, IOUT = 500 mA, COUT = 10 µF, CNR/SS = CFF = 10 nF |
VOUT = 1.2 V, VIN = VEN = 1.5 V, COUT = 10 µF, CNR/SS = CFF = 10 nF |
VOUT = 1.2 V, VIN = VEN = 1.7 V, IOUT = 500 mA, COUT = 10 µF, CFF = 10 nF |
VIN = 2.2 V, VOUT = 1.2 V, IOUT = 500 mA, CIN = COUT = 10 µF, CFF = 10 nF, VRMS BW = 10 Hz to 100 kHz |
VIN = 2.2 V, VOUT = 1.2 V, IOUT = 500 mA, CIN = 10 µF, CNR/SS = CFF = 10 nF, VRMS BW = 10 Hz to 100 kHz |
VIN = 1.4 V, VOUT = 0.8 V |
IOUT = 500 mA |
IOUT = 50 mA |
VIN = 1.4 V |
VIN = 1.4 V, IOUT = 50 mA to 500 mA to 50 mA at 1 A/µs, COUT = 10 µF, VPG = VOUT |
VIN = 1.4 V to 6.5 V to 1.4 V at 2 V/µs, VOUT = 0.8 V, IOUT = 500 mA, CNR/SS = CFF = 10 nF, VPG = VOUT |
VIN = 1.4 V, VPG = VOUT |
VIN = 1.4 V, VPG = VOUT |
VOUT = 1.2 V, IOUT = 500 mA, COUT = 10 µF, CNR/SS = CFF = 10 nF |
VOUT = 5 V, IOUT = 500 mA, COUT = 10 µF, CNR/SS = CFF = 10 nF |
VOUT = 3.3 V, VIN = VEN = 3.6 V, COUT = 10 µF, CNR/SS = CFF = 10 nF |
VIN = VOUT + 1.0 V, IOUT = 500 mA, CIN = COUT = 10 µF, CNR/SS = CFF = 10 nF, VRMS BW = 10 Hz to 100 kHz |
VIN = 2.2 V, VOUT = 1.2 V, IOUT = 500 mA, CIN = COUT = 10 µF, CNR/SS = 10 nF, VRMS BW = 10 Hz to 100 kHz |
VIN = 1.4 V, VOUT = 0.8 V | ||
VIN = 5.5 V |
VIN = 1.4 V |
VEN = 0.4 V |
VIN = VPG = 6.5 V |
VIN = 5.5 V, IOUT = 50 mA to 500 mA to 50 mA at 1 A/µs, COUT = 10 µF, VPG = VOUT |
VIN = 1.4 V, VPG = VOUT | ||
VIN = 1.4 V, VPG = VOUT |