JAJSJ95C June   2020  – August 2022 TPS7B86-Q1

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Enable (EN)
      2. 7.3.2 Power-Good (PG)
      3. 7.3.3 Adjustable Power-Good Delay Timer (DELAY)
      4. 7.3.4 Undervoltage Lockout
      5. 7.3.5 Thermal Shutdown
      6. 7.3.6 Current Limit
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Functional Mode Comparison
      2. 7.4.2 Normal Operation
      3. 7.4.3 Dropout Operation
      4. 7.4.4 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input and Output Capacitor Selection
      2. 8.1.2 Adjustable Device Feedback Resistor Selection
      3. 8.1.3 Feed-Forward Capacitor
      4. 8.1.4 Dropout Voltage
      5. 8.1.5 Reverse Current
      6. 8.1.6 Power Dissipation (PD)
        1. 8.1.6.1 Thermal Performance Versus Copper Area
        2. 8.1.6.2 Power Dissipation Versus Ambient Temperature
      7. 8.1.7 Estimating Junction Temperature
      8. 8.1.8 Power-Good
        1. 8.1.8.1 Setting the Adjustable Power-Good Delay
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitor
        2. 8.2.2.2 Output Capacitor
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Package Mounting
        2. 8.4.1.2 Board Layout Recommendations to Improve PSRR and Noise Performance
      2. 8.4.2 Layout Examples
  9. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Device Nomenclature
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 サポート・リソース
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.1.4 Dropout Voltage

Dropout voltage (VDO) is defined as the input voltage minus the output voltage (VIN – VOUT) at the rated output current (IRATED), where the pass transistor is fully on. IRATED is the maximum IOUT listed in the Section 6.3 table. The pass transistor is in the ohmic or triode region of operation, and acts as a switch. The dropout voltage indirectly specifies a minimum input voltage greater than the nominal programmed output voltage at which the output voltage is expected to stay in regulation. If the input voltage falls to less than the nominal output regulation, then the output voltage falls as well.

For a CMOS regulator, the dropout voltage is determined by the drain-source on-state resistance (RDS(ON)) of the pass transistor. Therefore, if the linear regulator operates at less than the rated current, the dropout voltage for that current scales accordingly. The following equation calculates the RDS(ON) of the device.

Equation 5. GUID-17F79C89-58DF-409D-8C5A-45B06F6B258E-low.gif