JAJSU64A April   2024  – August 2024 TPS7H4011-SP

PRODMIX  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Options Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Quality Conformance Inspection
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VIN and Power VIN Pins (VIN and PVIN)
      2. 8.3.2  Voltage Reference
      3. 8.3.3  Remote Sensing and Setting VOUT
        1. 8.3.3.1 Minimum Output Voltage
        2. 8.3.3.2 Maximum Output Voltage
      4. 8.3.4  Enable
      5. 8.3.5  Fault Input (FAULT)
      6. 8.3.6  Power Good (PWRGD)
      7. 8.3.7  Adjustable Switching Frequency and Synchronization
        1. 8.3.7.1 Internal Clock Mode
        2. 8.3.7.2 External Clock Mode
        3. 8.3.7.3 Primary-Secondary Synchronization
      8. 8.3.8  Turn-On Behavior
        1. 8.3.8.1 Soft-Start (SS_TR)
        2. 8.3.8.2 Safe Start-Up Into Prebiased Outputs
        3. 8.3.8.3 Tracking and Sequencing
      9. 8.3.9  Protection Modes
        1. 8.3.9.1 Overcurrent Protection
          1. 8.3.9.1.1 High-Side 1 Overcurrent Protection (HS1)
          2. 8.3.9.1.2 High-Side 2 Overcurrent Protection (HS2)
          3. 8.3.9.1.3 COMP Shutdown
          4. 8.3.9.1.4 Low-Side Overcurrent Sinking Protection
        2. 8.3.9.2 Output Overvoltage Protection (OVP)
        3. 8.3.9.3 Thermal Shutdown
      10. 8.3.10 Error Amplifier and Loop Response
        1. 8.3.10.1 Error Amplifier
        2. 8.3.10.2 Power Stage Transconductance
        3. 8.3.10.3 Slope Compensation
        4. 8.3.10.4 Frequency Compensation
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Operating Frequency
        2. 9.2.2.2  Output Inductor Selection
        3. 9.2.2.3  Output Capacitor Selection
        4. 9.2.2.4  Input Capacitor Selection
        5. 9.2.2.5  Soft-Start Capacitor Selection
        6. 9.2.2.6  Rising VIN Set Point (Configurable UVLO)
        7. 9.2.2.7  Output Voltage Feedback Resistor Selection
        8. 9.2.2.8  Output Voltage Accuracy
        9. 9.2.2.9  Slope Compensation Requirements
        10. 9.2.2.10 Compensation Component Selection
        11. 9.2.2.11 Schottky Diode
      3. 9.2.3 Application Curve
      4. 9.2.4 Parallel Operation Compensation
      5. 9.2.5 Inverting Buck-Boost
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 サード・パーティ製品に関する免責事項
      2. 10.1.2 Related Documentation
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 サポート・リソース
    4. 10.4 Trademarks
    5. 10.5 静電気放電に関する注意事項
    6. 10.6 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Mechanical Data

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • HLB|30
サーマルパッド・メカニカル・データ
発注情報
8.3.9.1.4 Low-Side Overcurrent Sinking Protection

It is possible for the low-side MOSFET to sink current from the load (such as during light load operation). In certain situations (such as a high current load being suddenly removed or VOUT being raised above the set point), the low-side sink current can become excessive. Therefore, low-side overcurrent sinking protection is provided.

If the low-side sinking current limit is exceeded, the low-side MOSFET is turned off immediately for the rest of that clock cycle. In this scenario, both MOSFETs are off until the start of the next cycle. When the low-side MOSFET turns off, the switch node voltage increases and forward biases the high-side MOSFET parallel body diode (the high-side MOSFET is still off at this stage).