Data Sheet
TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver
1 Features
- Radiation performance:
- Radiation hardness assurance (RHA) up to
total ionizing dose (TID) of 100krad(Si) - Single-event latchup (SEL), single-event burnout
(SEB) and single-event gate rupture (SEGR) immune to
LET = 75MeV-cm2/mg - Single-event transient (SET) and single-event
functional interrupt (SEFI) characterized up to
LET = 75MeV-cm2/mg
- Radiation hardness assurance (RHA) up to
- 4.5V to 14V input voltage range for both controller and driver stages
- Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN
devices
- 1.2A peak source and sink capability at 12V
- Optional connection of VLDO linear regulator output to PVIN for driving GaN
- Programmable linear regulator (VLDO) from 4.5V to 5.5V
- 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
- Switching frequency from 100kHz to 1MHz
- External clock synchronization capability
- Adjustable slope compensation and soft start
- Plastic packages outgas tested per ASTM E595
2 Applications
- Space satellite power supplies
- Communications payload
- Radar imaging payload
- Satellite electrical power system
Typical Application Circuit