SLUSBZ6A April 2016 – August 2016 TPS92515 , TPS92515-Q1 , TPS92515HV , TPS92515HV-Q1
PRODUCTION DATA.
Integrated in the TPS92515 is a low on-resistance (RDS(on)) N-channel MOSFET. The resistance specified in the Electrical Characteristics table for the drive voltage and temperature is important to consider because the actual on-resistance for a given operating point affects efficiency and the transition point into drop-out when operating at high currents. A sensing element for thermal shutdown circuitry has been located close to the internal FET to better assist in part protection.